Method for fabricating chamber parts

Abstract

One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz.

1 . A method of fabricating a coating material, comprising:
 forming an interface layer on a base structure, the base structure comprising an aluminum or silicon containing material, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof; and   forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of Si v Y w Mg x Al y O z , and each of v, w, x, y, and z represents a non-zero value.   
     
     
         2 . The method of  claim 1 , further comprising:
 thermally treating the coating layer and the interface layer formed on the base structure.   
     
     
         3 . The method of  claim 2 , wherein thermally treating the coating layer and the interface layer further comprises:
 maintaining a base structure temperature between about 400 degrees Celsius and about 800 degrees Celsius.   
     
     
         4 . The method of  claim 1 , wherein the interface layer is a Ta containing material, a silicon oxide layer or a yttria containing material. 
     
     
         5 . The method of  claim 1 , wherein the interface layer has a stress range between about −1000 MPa and about 100 MPa. 
     
     
         6 . The method of  claim 1 , wherein the interface layer is a tensile or a compressive layer. 
     
     
         7 . The method of  claim 1 , wherein the coating layer has a stress range between about −700 MPa and about 1000 MPa. 
     
     
         8 . The method of  claim 1 , wherein the coating layer is a tensile or a compressive layer. 
     
     
         9 . The method of  claim 1 , wherein the coating layer and the interface layer in combination has a stress range between about −700 MPa and about 300 MPa. 
     
     
         10 . The method of  claim 1 , wherein the interface layer and the coating layer share a common element. 
     
     
         11 . The method of  claim 1 , wherein the interface layer and the base structure share a common element. 
     
     
         12 . A chamber component, comprising:
 an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof; and   a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of Si v Y w Mg x Al y O z , and each of v, w, x, y, and z represents a non-zero value.   
     
     
         13 . The chamber component of  claim 12 , wherein the interface layer of the coating layer is a compressive or a tensile film. 
     
     
         14 . The chamber component of  claim 13 , wherein the coating layer has a film stress between −700 mega-pascal (MPa) and 200 mega-pascal (MPa), and the interface layer has a film stress between −100 mega-pascal (MPa) and −120 mega-pascal (MPa). 
     
     
         15 . The chamber component of  claim 14 , wherein the interface layer includes an yttria containing material. 
     
     
         16 . The chamber component of  claim 12 , wherein the coating layer has a film stress between −700 mega-pascal (MPa) and 200 mega-pascal (MPa), and the interface layer  304  has a film stress between −140 mega-pascal (MPa) and −160 mega-pascal (MPa). 
     
     
         17 . The chamber component of  claim 16 , wherein the interface layer includes a silicon oxide (SiO 2 ) containing material. 
     
     
         18 . The chamber component of  claim 12 , wherein the coating layer and the interface layer collectively have a film stress is between about −700 MPa and about 300 MPa. 
     
     
         19 . A method of fabricating a coating material, comprising:
 forming an interface layer on a base structure, the base structure comprising an aluminum or silicon containing material;   forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of Si v Y w Mg x Al y O z , wherein the interface layer and the coating layer share a common element, and each of v, w, x, y, and z represents a non-zero value; and   thermally treating the coating layer and the interface layer formed on the base structure.   
     
     
         20 . The method of  claim 19 , wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof.