Apparatus and method for selective material removal during polishing

Abstract

Apparatus and methods for correcting asymmetry in a thickness profile by use of a Chemical Mechanical Planarization (CMP) process. In one embodiment, a CMP system includes a polishing pad, an adhesion layer, and a platen. The polishing pad includes has a polishing surface, a second surface that is positioned opposite to the polishing surface in a first direction, and a plurality of cavities formed in the second surface. The platen includes a body that comprises a pad supporting surface and one or more ports formed in the body, configured to receive a positive or negative pressure that is generated from a fluid control device. Each of the plurality of cavities is in fluid communication with at least one of the one or more ports and the adhesion layer is disposed between the pad supporting surface of the platen and a portion of the second surface of the polishing pad.

1 . A method of removing material on a substrate, comprising:
 urging a device surface of a substrate against a polishing surface of a polishing pad disposed on a surface of a platen, wherein
 the polishing pad comprises:
 a second surface that is positioned opposite to the polishing surface in a first direction, and 
 a plurality of cavities formed in the second surface, and 
 
 the platen comprises one or more ports, and each port of the one or more ports is in fluid communication with a cavity of the plurality of cavities; 
   translating the substrate relative to the polishing surface of the polishing pad; and   applying a positive pressure or a negative pressure to a cavity of the plurality of cavities through the port that is in fluid communication with the cavity, wherein applying the positive pressure or the negative pressure to the cavity causes a first portion of the polishing surface of the polishing pad to alter its position relative to a second portion of the polishing surface when measured in the first direction.   
     
     
         2 . The method of  claim 1 , wherein the applying the positive pressure or the negative pressure to the cavity of the plurality of cavities further comprises causing a pump to deliver a gas to or remove a gas from the cavity. 
     
     
         3 . The method of  claim 2 , wherein the pump is a vacuum pump. 
     
     
         4 . The method of  claim 1 , wherein the applying the positive pressure or the negative pressure to the cavity of the plurality of cavities further comprises forming a μm to about a 200 μm gap in the first direction between the first portion of the polishing surface of the polishing pad relative to the second portion of the polishing surface. 
     
     
         5 . The method of  claim 1 , further comprising adjusting the application of the positive pressure or negative pressure to the cavity as the substrate is translated relative to the polishing surface of the polishing pad. 
     
     
         6 . The method of  claim 1 , further comprising:
 determining one or more residue locations on the device surface of the substrate,   wherein the applying the positive pressure or the negative pressure to the cavity is performed as the substrate is translated relative to the polishing surface of the polishing pad, and the application of the positive pressure or negative pressure to the cavity is based on the position of the determined one or more residue locations on the device surface of the substrate to the cavity.   
     
     
         7 . A method of removing material on a substrate, comprising:
 urging a device surface of a substrate against a polishing surface of a polishing pad disposed on a surface of a platen, wherein
 the polishing pad comprises:
 a second surface that is positioned opposite to the polishing surface in a first direction, and 
 a plurality of cavities formed in the second surface, and 
 
 the platen comprises one or more ports, and each port of the one or more ports is in fluid communication with a cavity of the plurality of cavities; 
   translating the substrate relative to the polishing surface of the polishing pad while applying a first positive pressure or a first negative pressure to a first cavity of the plurality of cavities through the port that is in fluid communication with the cavity, wherein applying the first positive pressure or the first negative pressure to the first cavity causes a first portion of the polishing surface of the polishing pad to alter its position relative to a second portion of the polishing surface when measured in the first direction; and   translating the substrate relative to the polishing surface of the polishing pad while applying a second positive pressure or a second negative pressure to a second cavity of the plurality of cavities through the port that is in fluid communication with the cavity, wherein applying the second positive pressure or the second negative pressure to the cavity causes a third portion of the polishing surface of the polishing pad to alter its position relative to the second portion of the polishing surface when measured in the first direction.   
     
     
         8 . The method of  claim 7 , translating the substrate relative to the polishing surface of the polishing pad while generating a first negative pressure to a first cavity further comprises a pump. 
     
     
         9 . The method of  claim 8 , wherein applying the first negative pressure to the first cavity causes a 50 μm to about a 200 μm gap to form in the first direction between the first portion of the polishing surface of the polishing pad relative to the second portion of the polishing surface. 
     
     
         10 . The method of  claim 7 , wherein applying the second negative pressure to the cavity causes a 50 μm to about a 200 μm gap to form in the first direction between the third portion of the polishing surface of the polishing pad relative to the second portion of the polishing surface. 
     
     
         11 . The method of  claim 7 , further comprising adjusting the application of the positive pressure or negative pressure to the cavity as the substrate is translated relative to the polishing surface of the polishing pad. 
     
     
         12 . The method of  claim 7 , further comprising:
 determining one or more residue locations on the device surface of the substrate; and   adjusting, by use of a controller, the application of the positive pressure or negative pressure to the cavity as the substrate is translated relative to the polishing surface of the polishing pad, wherein the process of adjusting the application of the positive pressure or negative pressure to the cavity is based on the position of the determined one or more residue locations to the cavity.   
     
     
         13 . A chemical mechanical polishing (CMP) system, comprising:
 a polishing pad comprising:
 a polishing surface; 
 a second surface that is positioned opposite to the polishing surface in a first direction; and 
 a plurality of cavities formed in the second surface; and 
 an adhesion layer; and 
   a platen comprising:
 a body that comprises a pad supporting surface; and 
 one or more ports formed in the body that are configured to receive a positive or negative pressure that is generated from a fluid control device, wherein
 each cavity of the plurality of cavities of the polishing pad is in fluid communication with at least one of the one or more ports, and 
 the adhesion layer is disposed between the pad supporting surface of the platen and a portion of the second surface of the polishing pad. 
 
   
     
     
         14 . The CMP system of  claim 13 , wherein the polishing pad further comprises a polishing layer and a foundation layer, wherein the polishing layer includes the polishing surface and the foundation layer includes the second surface. 
     
     
         15 . The CMP system of  claim 13 , wherein the one or more ports further comprise a plurality of ports that are arranged in two or more concentric circular arrays of ports. 
     
     
         16 . The CMP system of  claim 13 , wherein each of the plurality of cavities are substantially dome-shaped. 
     
     
         17 . The CMP system of  claim 13 , wherein each of the plurality of cavities are defined by a portion of the second surface of the polishing pad, a portion of the adhesive layer and a portion of the pad supporting surface of the platen. 
     
     
         18 . The CMP system of  claim 13 , wherein the one or more ports are disposed in a radial pattern that extends from a center of the platen. 
     
     
         19 . The CMP system of  claim 13 , wherein the one or more ports are disposed in a grid or random pattern in the platen. 
     
     
         20 . The CMP system of  claim 13 , further comprising computer-implemented instructions stored in memory which, when executed by a processor, are configured to perform a method of processing a substrate, comprising:
 urging a device surface of a substrate against the polishing surface of the polishing pad;   translating the substrate relative the polishing surface of the polishing pad and the pad supporting surface of the platen; and   applying a positive pressure or a negative pressure to a cavity of the plurality of cavities through the port that is in fluid communication with the cavity, wherein applying the positive pressure or the negative pressure to the cavity causes a first portion of the polishing surface of the polishing pad to alter its position relative to a second portion of the polishing surface when measured in the first direction.