Additive manufacturing of polishing pads

Abstract

Interpenetrating polymer networks (IPNs) for a forming polishing pad for a semiconductor fabrication operation are disclosed. Techniques for forming the polishing pads are provided. In an exemplary embodiment, a polishing pad includes an interpenetrating polymer network formed from a free-radically polymerized material and a cationically polymerized material.

What is claimed is: 
     
         1 . A polishing pad for a semiconductor fabrication operation, comprising an interpenetrating polymer network formed from a free radically polymerized material and a cationically polymerized material, wherein a ratio of the cationically polymerized material to the free-radically polymerized material in the precursor blend is selected to control the properties of the polishing pad. 
     
     
         2 . The polishing pad of  claim 1 , wherein the properties comprise elongation at break, ultimate tensile strength (UTS), storage modulus, or glass transition temperature, or any combination thereof. 
     
     
         3 . The polishing pad of  claim 1 , wherein the free radically polymerized material comprises a urethane acrylate oligomer. 
     
     
         4 . The polishing pad of  claim 1 , wherein the cationically polymerized material comprises an epoxy oligomer. 
     
     
         5 . The polishing pad of  claim 1 , wherein the ratio of the cationically polymerized material to the free-radically polymerized material is between 10 wt. % and 65 wt. %. 
     
     
         6 . The polishing pad of  claim 5 , wherein the ratio of the cationically polymerized material to the free radically polymerized material is about 25 wt. %. 
     
     
         7 . The polishing pad of  claim 1 , wherein the interpenetrating polymer network has an E′30 modulus between 5 megapascals (MPa) and 100 MPa. 
     
     
         8 . The polishing pad of  claim 1 , wherein the interpenetrating polymer network has an E′30 modulus between 101 megapascals (MPa) and 500 MPa. 
     
     
         9 . The polishing pad of  claim 1 , wherein the interpenetrating polymer network has an E′30 modulus between 501 megapascals (MPa) and 3000 MPa. 
     
     
         10 . The polishing pad of  claim 1 , wherein the interpenetrating polymer network is formed from an active blend comprising a free radical photoinitiator, a free-radically polymerized material, a cationic photoinitiator, and cationically polymerized material. 
     
     
         11 . The polishing pad of  claim 10 , wherein the interpenetrating polymer network is formed by depositing droplets of the free radically polymerized material and droplets of the cationically polymerized material from a 3D printer nozzle. 
     
     
         12 . The polishing pad of  claim 9 , wherein the polishing pad is annealed by exposure to radiation.