US2023225215A1PendingUtilityA1

Acoustic wave device

68
Assignee: MURATA MANUFACTURING COPriority: Jul 31, 2019Filed: Mar 16, 2023Published: Jul 13, 2023
Est. expiryJul 31, 2039(~13 yrs left)· nominal 20-yr term from priority
Inventors:Takashi OsawaMasaki TsutsumiMasahiro Fukushima
H03H 9/1071H10N 30/8542H03H 9/02826H03H 9/1092H10N 30/874H10N 30/2047
68
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Claims

Abstract

An acoustic wave device includes a piezoelectric substrate made of LiNbO 3 or LiTaO 3 and including first and second main surfaces that face each other, an IDT electrode provided on the first main surface of the piezoelectric substrate, and a Li 2 CO 3 layer provided on the second main surface of the piezoelectric substrate.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An acoustic wave device comprising:
 a piezoelectric substrate made of LiNbO 3  or LiTaO 3  and including first and second main surfaces that face each other;   an IDT electrode provided on the first main surface of the piezoelectric substrate; and   a Li 2 CO 3  layer provided on the second main surface of the piezoelectric substrate.   
     
     
         2 . The acoustic wave device according to  claim 1 , wherein the Li 2 CO 3  layer is provided on a portion of the second main surface of the piezoelectric substrate. 
     
     
         3 . The acoustic wave device according to  claim 1 , wherein the piezoelectric substrate is made of LiNbO 3 . 
     
     
         4 . The acoustic wave device according to  claim 1 , wherein the Li 2 CO 3  layer includes a pattern shape. 
     
     
         5 . The acoustic wave device according to  claim 1 , wherein the IDT electrode is located inside a hollow portion; and
 the Li 2 CO 3  layer overlaps with the hollow portion.   
     
     
         6 . The acoustic wave device according to  claim 1 , wherein the Li 2 CO 3  layer overlaps with the IDT electrode. 
     
     
         7 . The acoustic wave device according to  claim 1 , further comprising:
 a terminal electrode provided on the second main surface of the piezoelectric substrate; wherein   the Li 2 CO 3  layer overlaps with the terminal electrode.   
     
     
         8 . The acoustic wave device according to  claim 1 , further comprising a wiring electrode located on the first main surface of the piezoelectric substrate. 
     
     
         9 . The acoustic wave device according to  claim 1 , further comprising:
 a wiring electrode located on the first main surface of the piezoelectric substrate; wherein   the Li 2 CO 3  layer overlaps with the wiring electrode.   
     
     
         10 . An acoustic wave device comprising:
 a piezoelectric substrate including first and second main surfaces that face each other;   a functional electrode provided on the first main surface of the piezoelectric substrate to excite acoustic waves; and   a first layer provided on the second main surface of the piezoelectric substrate; wherein   a surface resistivity of the first layer is lower than a surface resistivity of the piezoelectric substrate.   
     
     
         11 . The acoustic wave device according to  claim 10 , wherein the surface resistivity of the first layer is about 10 5 Ω to 10 7 Ω. 
     
     
         12 . The acoustic wave device according to  claim 10 , wherein the surface resistivity of resistivity of the piezoelectric substrate is greater than or equal to about 10 8 Ω. 
     
     
         13 . The acoustic wave device according to  claim 10 , wherein the first layer is provided on a portion of the second main surface of the piezoelectric substrate. 
     
     
         14 . The acoustic wave device according to  claim 10 , wherein the piezoelectric substrate is made of LiNbO 3 . 
     
     
         15 . The acoustic wave device according to  claim 10 , wherein the functional electrode is located inside a hollow portion; and
 the first layer overlaps with the hollow portion.   
     
     
         16 . The acoustic wave device according to  claim 10 , wherein functional electrode is an IDT electrode; and
 the first layer overlaps with the IDT electrode.   
     
     
         17 . An acoustic wave device comprising:
 a piezoelectric substrate made of LiNbO 3  or LiTaO 3  and including first and second main surfaces that face each other;   a functional electrode provided on the first main surface of the piezoelectric substrate to excite acoustic waves; and   a lasered layer formed by laser irradiation of the piezoelectric substrate provided on the second main surface of the piezoelectric substrate.   
     
     
         18 . The acoustic wave device according to  claim 17 , wherein the lasered layer is provided on a portion of the second main surface of the piezoelectric substrate. 
     
     
         19 . The acoustic wave device according to  claim 17 , wherein the piezoelectric substrate is made of LiNbO 3 . 
     
     
         20 . The acoustic wave device according to  claim 17 , wherein
 functional electrode is an IDT electrode; and   the first layer overlaps with the IDT electrode.

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