Pattern forming method, method for producing electronic device, and kit

Abstract

An object of the present invention is to provide a pattern forming method which is excellent in developability and defect suppression performance. Another object of the present invention is to provide a method for producing an electronic device including the pattern forming method. Still another object of the present invention is to provide a kit capable of forming a pattern which is excellent in developability and defect suppression performance. The pattern forming method of the present invention is a pattern forming method including a resist film forming step of forming a resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition; an exposing step of exposing the resist film; and a developing step of developing the exposed resist film using a developer, in which the actinic ray-sensitive or radiation-sensitive resin composition contains an acid-decomposable resin represented by a specific structure; and as the developer, a chemical liquid containing an organic solvent, alcohol impurities, and metal impurities containing at least metal atoms is used, the total content of the alcohol impurities being 0.01 mass ppb to 1000 mass ppm with respect to the total mass of the chemical liquid.

What is claimed is: 
     
         1 . A kit comprising:
 a developer; and
 an actinic ray-sensitive or radiation-sensitive resin composition containing a resin including a repeating unit selected from the group consisting of a repeating unit represented by Formula (a), a repeating unit represented by Formula (b), a repeating unit represented by Formula (c), a repeating unit represented by Formula (d), and a repeating unit represented by Formula (e),
 wherein the developer is a chemical liquid containing 
 an organic solvent, 
 organic impurities containing at least alcohol impurities, and 
 metal impurities containing metal atoms, in which the total content of the alcohol impurities is 0.01 mass ppb to 1000 mass ppm with respect to the total mass of the chemical liquid, 
 
   
       
         
           
           
               
               
           
         
         
           
             in the formulae, 
             Rx1 to Rx5 each independently represent a hydrogen atom or an alkyl group which may have a substituent, 
             R1 to R4 each independently represent a monovalent substituent, and p1 to p4 each independently represent 0 or a positive integer, 
             Ra represents a linear or branched alkyl group, 
             T1 to T5 each independently represent a single bond or a divalent linking group, 
             R5 represents a monovalent organic group, 
             a to e each represent mol %, and each independently represent a number within ranges of 0a≤100, 0≤b≤100, 0≤c≤100, 0≤d≤100, and 0≤e≤100, provided that a+b+c+d+e=100 and a+b≠0, and 
             the repeating unit represented by Formula (e) is different from any of the repeating units represented by Formulae (a) to (d). 
           
         
       
     
     
         2 . A kit comprising:
 a developer; and   an actinic ray-sensitive or radiation-sensitive resin composition containing a resin having a repeating unit having a phenolic hydroxyl group and having a group capable of decomposing by the action of an acid to generate a polar group,
 wherein the developer is a chemical liquid containing 
 an organic solvent, 
 organic impurities containing at least alcohol impurities, and 
 metal impurities containing metal atoms, in which the total content of the alcohol impurities is 0.01 mass ppb to 1000 mass ppm with respect to the total mass of the chemical liquid. 
   
     
     
         3 . The kit according to  claim 1 , further comprising:
 a rinsing liquid,   wherein the rinsing liquid is a chemical liquid containing   an organic solvent,   organic impurities containing at least alcohol impurities, and   metal impurities containing metal atoms, in which the total content of the alcohol impurities is 0.01 mass ppb to 1000 mass ppm with respect to the total mass of the chemical liquid.   
     
     
         4 . The kit according to  claim 1 ,
 wherein the metal impurities contain at least one specific metal atom selected from the group consisting of an Fe atom, a Cr atom, a Ni atom, and a Pb atom,   in a case where the specific metal atom is one selected from the group consisting of an Fe atom, a Cr atom, a Ni atom, and a Pb atom, a content of the specific metal atom is 0.001 to 100 mass ppt with respect to the total mass of the chemical liquid,   in a case where the specific metal atom is two or more selected from the group consisting of an Fe atom, a Cr atom, a Ni atom, and a Pb atom, the content of each of the specific metal atoms is 0.001 to 100 mass ppt with respect to the total mass of the chemical liquid, and   the total content of the metal atoms contained in the chemical liquid is 0.1 to 500 mass ppt with respect to the total mass of the chemical liquid.   
     
     
         5 . The kit according to  claim 1 ,
 wherein the actinic ray-sensitive or radiation-sensitive resin composition further contains
 an organic solvent, 
 organic impurities containing at least alcohol impurities, and 
 metal impurities containing metal atoms, in which the total content of the alcohol impurities is 0.01 mass ppb to 1000 mass ppm with respect to the total mass of the composition.