Asymmetrical electrolytic plating for a conductive pattern
Abstract
The present invention relates to methods and systems for deposition of metal conductors using asymmetrical electrolytic plating, in which one surface (e.g., top) of a substrate is coated with an electrical conductor, and an opposite (e.g., bottom, or other) surface of which is not coated. A channel is formed between the two sides of the substrate, passing through the substrate and, in some embodiments, passing through the conductor. Electrolytic plating is performed such that metal is deposited from the edge of the conduct proximal to the channel, along the side walls of the channel, and up to, and in some embodiments on to, the other side of the substrate. Use of etching or plate resist layers are also contemplated.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of forming an electrically conductive path on a substrate having a first side and a second side, comprising:
depositing a first conductive material on the first side of the substrate; forming a channel from the second side of the substrate to the first side of the substrate; and procedurally depositing, by electrolytic plating, a second conductive material that propagates from the first conductive material, then extends along a wall of the channel, and then extends to at least a surface of the channel adjacent to the second side of the substrate.
2 . The method of claim 1 , wherein the second conductive material extends to cover at least a portion of the second side of the substrate.
3 . The method of claim 1 , wherein the step of depositing the first conductive material occurs before the step of forming a channel.
4 . The method of claim 1 , further comprising protecting a portion of the first conductive material proximal to the channel with an etching resist material, and removing the first conductive material not protected by the etching resist material.
5 . The method of claim 1 , further comprising protecting a portion of the second conductive material proximal to the channel with an etching resist material, and removing the second conductive material not protected by the etching resist material.Cited by (0)
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