Composition and methods using same for carbon doped silicon containing films

Abstract

A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (<4.0) and high oxygen ash resistance silicon-containing film such as, without limitation, a carbon doped silicon oxide, are disclosed.

1 . A method for forming a carbon doped silicon oxide film having carbon content ranging from 15 at. % to 30 at. % via a thermal ALD process, the method comprising:
 a) placing one or more substrates comprising a surface feature into a reactor;   b) heating to reactor to one or more temperatures ranging from ambient temperature to about 550° C. and optionally maintaining the reactor at a pressure of 100 torr or less;   c) introducing into the reactor at least one silicon precursor having two Si—C—Si linkages selected from the group consisting of 1-chloro-1,3-disilacyclobutane, 1-bromo-1,3-disilacyclobutane, 1,3-dichloro-1,3-1,3-disilacyclobutane, 1,3-dibromo-1,3-disilacyclobutane, 1,1,3-trichloro-1,3-disilacyclobutane, 1,1,3-tribromo-1,3-disilacyclobutane, 1,1,3,3-tetrachloro-1,3-disilacyclobutane, 1,1,3,3-tetrabromo-1,3-disilacyclobutane, 1,3-dichloro-1,3-dimethyl-1,3-disilacyclobutane, 1,3-bromo-1,3-dimethyl-1,3-disilacyclobutane, 1,1,1,3,3,5,5,5-octachloro-1,3,5-trisilapentane, 1,1,3,3,5,5-hexachloro-1,5-dimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-3,3-dimethyl-1,3,5-trisilapentane, 1,1,3,5,5-pentachloro-1,3,5-trimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-1,3,5-trisilapentane, 1,1,5,5-tetraachloro-1,3,5-trisilapentane;   d) purging with an inert gas;   e) providing a nitrogen source into the reactor to react with the surface to form a carbon doped silicon nitride film;   f) purging with inert gas to remove reaction by-products;   g) repeating steps c to f to provide a desired thickness of a resulting carbon doped silicon nitride;   h) treating the resulting carbon doped silicon nitride film with an oxygen source at one or more temperatures ranging from about ambient temperature to 1000° C. to convert the carbon doped silicon nitride film into a carbon doped silicon oxide film; and   i) providing post-deposition exposing the carbon doped silicon oxide film to a plasma comprising hydrogen.   
     
     
         2 . A film formed according to the method of  claim 1  having a dielectric constant of less than about 4, and a carbon content of at least about 10 at. %. 
     
     
         3 . A film formed according to the method of  claim 1  having an etch rate of at least 0.5 times less than thermal silicon oxide, wherein the etch rate is measured with diluted HF. 
     
     
         4 . A film formed according to the method of  claim 1  having an etch rate of at least 0.1 times less than thermal silicon oxide, wherein the etch rate is measured with diluted HF. 
     
     
         5 . A film formed according to the method of  claim 1  having an etch rate of at least 0.05 times less than thermal silicon oxide, wherein the etch rate is measured with diluted HF. 
     
     
         6 . A film formed according to the method of  claim 1  having an etch rate of at least 0.01 times less than thermal silicon oxide, wherein the etch rate is measured with diluted HF. 
     
     
         7 . A film formed according to the method of  claim 1  having a damage layer of 50 Å or less following an oxygen ashing process. 
     
     
         8 . A film formed according to the method of  claim 1  having a damage layer of 20 Å or less following an oxygen ashing process. 
     
     
         9 . A film formed according to the method of  claim 1  having a damage layer of 10 Å or less following an oxygen ashing process. 
     
     
         10 . A film formed according to the method of  claim 1  having a damage layer of 5 Å or less following an oxygen ashing process. 
     
     
         11 . The method according to  claim 1  wherein the step h) of treating the resulting carbon doped silicon nitride film with an oxygen source is performed at one or more temperatures ranging from or from about 100° C. to 400° C. 
     
     
         12 . A method for forming a carbon doped silicon oxide film having carbon content ranging from 15 at % to 30 at. % via a thermal ALD process, the method comprising the method comprising:
 a. placing one or more substrates comprising a surface feature into a reactor;   b. heating the reactor to one or more temperatures ranging from ambient temperature to about 150° C. and optionally maintaining the reactor at a pressure of 100 torr or less;   c. introducing into the reactor at least precursor having two Si—C—Si linkages selected from the group consisting of 1-chloro-1,3-disilacyclobutane, 1-bromo-1,3-disilacyclobutane, 1,3-dichloro-1,3-1,3-disilacyclobutane, 1,3-dibromo-1,3-disilacyclobutane, 1,1,3-trichloro-1,3-disilacyclobutane, 1,1,3-tribromo-1,3-disilacyclobutane, 1,1,3,3-tetrachloro-1,3-disilacyclobutane, 1,1,3,3-tetrabromo-1,3-disilacyclobutane, 1,3-dichloro-1,3-dimethyl-1,3-disilacyclobutane, 1,3-bromo-1,3-dimethyl-1,3-disilacyclobutane, 1,1,1,3,3,5,5,5-octachloro-1,3,5-trisilapentane, 1,1,1,3,3,5,5,5-octachloro-1,3,5-trisilapentane, 1,1,1,3,3,5,5,5-octachloro-1,5-dimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-3,3-dimethyl-1,3,5-trisilapentane, 1,1,3,5,5,5-pentachloro-1,3,5-trimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-1,3,5-trisilapentane, 1,1,5,5-tetraachloro-1,3,5-trisilapentane and a catalyst;   d. purging with an inert gas   e. providing vapors of water into the reactor to react with the precursor as well as a catalyst to form a carbon doped silicon oxide as-deposited film; and   f. purging with inert gas to remove reaction by-products;   wherein steps c to f are repeated to provide a desired thickness of carbon doped silicon oxide.   
     
     
         13 . The method of  claim 12  further comprising post-deposition treatment of the carbon doped silicon oxide film with a thermal anneal at temperatures from 300 to 700° C. 
     
     
         14 . The method of  claim 12  further comprising hydrogen plasma treatment of the carbon doped silicon oxide film with a plasma comprising hydrogen.