Systems and methods for phase change material based thermal assessment

Abstract

In an embodiment, a method includes: growing a phase change material on a platform configured for a semiconductor workpiece process; setting the phase change material to an amorphous state; performing the semiconductor workpiece process within a semiconductor processing chamber; and measuring resistance across two points along the phase change material.

What is claimed is: 
     
         1 . A system, comprising:
 a chamber configured to process a semiconductor workpiece deposited therein;   a phase change material disposed on a platform configured for processing of the semiconductor workpiece within the chamber, wherein the processing of the semiconductor workpiece comprises at least one of: rapid thermal processing (RTP), physical vapor deposition (PVD) and dynamic surface annealing (DSA;   a probe configured to set the phase change material to an amorphous state;   a heating element configured to set the phase change material to the amorphous state; and   contacts disposed on the phase change material, the contacts configured for measuring a resistance across two points along the phase change material during the processing of the semiconductor workpiece within the chamber.   
     
     
         2 . The system of  claim 1 , wherein the phase change material abuts the heating element within the chamber. 
     
     
         3 . The system of  claim 1 , wherein the phase change material abuts a wafer location within the chamber. 
     
     
         4 . The system of  claim 1 , wherein the phase change material is GeSbTe alloy. 
     
     
         5 . The system of  claim 1 , wherein the platform is a wafer support structure. 
     
     
         6 . The system of  claim 1 , wherein the probe is configured to emit an electrical pulse. 
     
     
         7 . The system of  claim 1 , wherein the phase change material is grown on the platform within the semiconductor processing chamber. 
     
     
         8 . The system of  claim 1 , wherein the probe is configured to emit an energy pulse to set the phase change material to the amorphous state. 
     
     
         9 . A system, comprising:
 a phase change material grown on a platform within a semiconductor processing chamber during a semiconductor workpiece process, wherein the semiconductor workpiece process comprises at least one of: rapid thermal processing (RTP), physical vapor deposition (PVD) or dynamic surface annealing (DSA); and   contacts disposed on the phase change material, the contacts configured for measuring a resistance across two points along the phase change material during the processing of the semiconductor workpiece within the chamber.   
     
     
         10 . The system of  claim 9 , wherein the phase change material abuts a heating element within the semiconductor processing chamber. 
     
     
         11 . The system of  claim 9 , wherein the phase change material abuts a wafer location within the semiconductor processing chamber. 
     
     
         12 . The system of  claim 9 , wherein the phase change material is GeSbTe alloy. 
     
     
         13 . The system of  claim 9 , further comprising a probe configured to set the phase change material to the amorphous state while performing the semiconductor workpiece process. 
     
     
         14 . The system of  claim 9 , wherein the probe is configured to emit an energy pulse to set the phase change material to the amorphous state. 
     
     
         15 . A system, comprising:
 a platform configured for processing of a semiconductor workpiece disposed thereon;   a phase change material disposed on the platform;   a heating element configured to set the phase change material to the amorphous state during processing of the semiconductor workpiece; and   contacts disposed on the phase change material, the contacts configured for input into an ohmmeter.   
     
     
         16 . The system of  claim 15 , wherein the phase change material abuts the heating element within the chamber. 
     
     
         17 . The system of  claim 15 , wherein the processing of the semiconductor workpiece comprises at least one of: rapid thermal processing (RTP), physical vapor deposition (PVD) and dynamic surface annealing (DSA). 
     
     
         18 . The system of  claim 15 , wherein the phase change material is GeSbTe alloy. 
     
     
         19 . The system of  claim 15 , wherein the platform is a wafer support structure. 
     
     
         20 . The system of  claim 15 , further comprising a probe configured to set the phase change material to the amorphous state, wherein the probe is configured to emit an electrical pulse.