Method of manufacturing semiconductor image sensor

Abstract

A method of manufacturing a semiconductor device includes disposing a plurality of a first type of light sensing units on a substrate; and disposing a plurality of a second type of light sensing units arranged on the substrate. Each of the first type of light sensing units is operable to receive less radiation than each of the second type of light sensing units. At least one of the second type of light sensing units is adjacent to a portion of at least one of the first type of light sensing units. The method includes disposing a first isolation structure between one of the first type of light sensing units and one of the second type of light sensing units; and disposing a second isolation structure between the adjacent first type of light sensing units. The method includes disposing a reflective layer above the first type of light sensing units.

What is claimed is: 
     
         1 . A method of manufacturing a semiconductor device, comprising:
 disposing a plurality of a first type of light sensing units on a substrate;   disposing a plurality of a second type of light sensing units arranged on the substrate, wherein each of the plurality of the first type of light sensing units is operable to receive less radiation compared to each of the plurality of the second type of light sensing units, and disposing the plurality of the second type of light sensing units comprises disposing at least one of the plurality of the second type of light sensing units adjacent to a portion of at least one of the plurality of the first type of light sensing units;   disposing a first isolation structure between one of the plurality of the first type of light sensing units and one of the plurality of the second type of light sensing units;   disposing a second isolation structure between the adjacent first type of light sensing units of the plurality of the first type of light sensing units; and   disposing a reflective layer above the plurality of the first type of light sensing units.   
     
     
         2 . The method of  claim 1 , wherein disposing the first isolation structure comprises disposing the first isolation structure having a larger projection area than the second isolation structure. 
     
     
         3 . The method of  claim 1 , wherein disposing the reflective layer comprises disposing the reflective layer extending from a projection area of the plurality of the first type of light sensing units to a projection area of the plurality of the second type of light sensing units. 
     
     
         4 . The method of  claim 1 , further comprising roughening a surface of at least one of the plurality of the second type of light sensing units. 
     
     
         5 . The method of  claim 1 , further comprising disposing a third type of light sensing unit between at least one of the plurality of the first type of light sensing units and at least one of the plurality of the second type of light sensing units, wherein the third type of light sensing unit is operable to receive less radiation than each of the plurality of the first type of light sensing units or each of the plurality of the second type of light sensing units. 
     
     
         6 . A method of manufacturing a semiconductor device comprising:
 forming a first plurality of light sensing elements on a substrate;   forming a second plurality of light sensing elements on the substrate, wherein the second plurality of light sensing elements surrounds the first plurality of light sensing elements, and each of the second plurality of light sensing elements is configured to receive a higher intensity of light than each of the first plurality of light sensing elements;   forming a first plurality of isolation structures, wherein each of the first plurality of isolation structures is between a light sensing element of the second plurality of light sensing elements and a corresponding light sensing element of the first plurality of light sensing elements;   forming a second plurality of isolation structures, wherein each of the second plurality of isolation structures is between adjacent light sensing elements of the first plurality of light sensing elements;   forming a plurality of metal structures over the first plurality of isolation structures and the second plurality of isolation structures, wherein each of the plurality of metal structures is aligned with a corresponding light sensing element of the first plurality of light sensing elements or a corresponding light sensing element of the second plurality of light sensing elements; and   forming a reflective layer over at least a portion of a first metal structure of the plurality of metal structures, wherein the reflective layer overlaps a first light sensing element of the first plurality of light sensing elements.   
     
     
         7 . The method of  claim 6 , further comprising forming a third plurality of light sensing elements on the substrate, wherein the third plurality of light sensing elements is between the first plurality of light sensing elements and the second plurality of light sensing elements. 
     
     
         8 . The method of  claim 6 , wherein forming the first plurality of light sensing elements comprises forming the first plurality of light sensing element having a curved surface. 
     
     
         9 . The method of  claim 6 , wherein forming the reflective layer comprises forming the reflective layer over an entirety of the first metal structure. 
     
     
         10 . The method of  claim 6 , wherein forming the reflective layer comprises forming the reflective layer over the first metal structure, and the first metal structure is over a first isolation structure of the first plurality of isolation structures. 
     
     
         11 . The method of  claim 6 , wherein forming the reflective layer comprises forming the reflective layer over the first metal structure, and the first metal structure is over a first isolation structure of the second plurality of isolation structures. 
     
     
         12 . The method of  claim 6 , wherein forming the reflective layer comprises forming the reflective layer overlapping the first light sensing element and a second light sensing element of the first plurality of light sensing elements. 
     
     
         13 . The method of  claim 6 , further comprising roughening a surface of at least one of the plurality of second light sensing elements. 
     
     
         14 . The method of  claim 6 , wherein forming the reflective layer comprises forming the reflective layer partially overlapping a first light sensing element of the second plurality of light sensing elements. 
     
     
         15 . The method of  claim 6 , wherein forming the first plurality of isolation structures comprises forming the first plurality of isolation structures simultaneously with forming the second plurality of isolation structures. 
     
     
         16 . A method of manufacturing a semiconductor device comprising:
 forming a first light sensing on a substrate, wherein the first light sensing element is configured to receive a first amount of light;   forming a second light sensing element on the substrate, wherein the second light sensing element is configured to receive the first amount of light;   forming a third light sensing element on the substrate, wherein the third light sensing element is configured to receive a second amount of light different from the first amount of light;   forming a first isolation structure between the first light sensing element and the second light sensing element;   forming a second isolation structure between the second light sensing element and the third light sensing element;   roughening a surface of the third light sensing element;   forming a dielectric layer over the first light sensing element, the second light sensing element, and the third light sensing element, wherein the roughened surface of the third light sensing element is proximate the dielectric layer.   
     
     
         17 . The method of  claim 16 , further comprising:
 forming a first metal structure over the dielectric layer, wherein the first metal structure is aligned with the first isolation structure; and   forming a second metal structure over the dielectric layer, wherein the second metal structure is aligned with the second isolation structure.   
     
     
         18 . The method of  claim 17 , further comprising forming a reflective layer over the dielectric layer, wherein the reflective layer overlaps the second light sensing element. 
     
     
         19 . The method of  claim 18 , wherein forming the reflective layer comprises forming the reflective layer overlapping the first metal structure and the first light sensing element. 
     
     
         20 . The method of  claim 18 , wherein forming the reflective layer comprises forming the reflective layer partially overlapping the third light sensing element.