Plating system and method thereof

Abstract

A plating system and a method thereof are disclosed. The plating system performs a N-stage plating drilling filling process in which a M-th stage plating drilling filling process with a M-th current density is performed on a hole of a substrate for a M-th plating time to form a M-th plating layer on the to-be-plated layer, wherein N is a positive integer equal to or greater than 3, and M is a positive integer positive integer in a range of 1 to N. Therefore, the technical effect of providing a higher drilling filling rate than conventional plating filling technology under a condition that a total thickness of plating layers is fixed can be achieved.

What is claimed is: 
     
         1 . A plating system, comprising:
 a substrate, comprising at least one hole formed therein and a to-be-plated layer formed on a surface thereof;   a power supply device, comprising a cathode and an anode, wherein the substrate is disposed on the cathode, and the power supply device is configured to supply power and adjust a current density for plating;   an plating tank, configured to accommodate plating solution with metal ion, wherein the substrate and the anode are immersed in the plating solution in the plating tank;   wherein the power supply device is activated and set to perform a N-stage plating drilling filling process in which a M-th stage plating drilling filling process with a M-th current density for a M-th plating time to form a M-th plating layer on the to-be-plated layer in the at least one hole, N is a positive integer equal to or greater than 3, and M is a positive integer in a range of 1 to N, and the power supply device is then stopped supplying power, and the substrate is taken out of the plating solution to perform a cleaning and drying process.   
     
     
         2 . The plating system according to  claim 1 , wherein when N is equal to 3, a second current density used for a second-stage plating drilling filling process is in a rage of 90% to 110% a first current density used for a first-stage plating drilling filling process, and a third current density used for a third-stage plating drilling filling process is in a range of 20% to 30% the second current density used for the second-stage plating drilling filling process. 
     
     
         3 . The plating system according to  claim 1 , wherein the current density used for each of stages of the N-stage plating drilling filling process is in a range of 0.5 ASD to 100 ASD, and the current densities used for the N-stage plating drilling filling process are the same or different. 
     
     
         4 . The plating system according to  claim 1 , wherein the thicknesses of the plating layers are the same or different. 
     
     
         5 . The plating system according to  claim 1 , wherein the metal ion is metal ion other than copper ion. 
     
     
         6 . A plating method, comprising:
 providing a substrate comprising at least one hole formed therein and a to-be-plated layer formed on a surface thereof;   providing a power supply device comprising a cathode and an anode, wherein the substrate is disposed on the cathode, the power supply device is configured to supply power for plating and adjust a current density for plating;   providing a plating tank configured to accommodate plating solution with metal ion, wherein the substrate and the anode are immersed in the plating solution in the plating tank;   activating and setting the power supply device to perform a M-th stage plating drilling filling process with a M-th current density for a M-th plating time, to form a M-th plating layer on the to-be-plated layer in the at least one hole, wherein N is a positive integer equal to or greater than 3, and M is a positive integer in a range of 1 to N; and   stopping the power supply device from supplying power, and taking the substrate out of the plating solution to perform a cleaning and drying process.   
     
     
         7 . The plating method according to  claim 6 , wherein when N is equal to 3, a second current density used for a second-stage plating drilling filling process is in a rage of 90% to 110% a first current density used for a first-stage plating drilling filling process, and a third current density used for a third-stage plating drilling filling process is in a range of 20% to 30% the second current density used for the second-stage plating drilling filling process. 
     
     
         8 . The plating method according to  claim 6 , wherein the current density used for each of stages of the N-stage plating drilling filling process is in a range of 0.5 ASD to 100 ASD, and the current densities used for the N-stage plating drilling filling process are the same or different. 
     
     
         9 . The plating method according to  claim 6 , wherein the thicknesses of the plating layers are the same or different. 
     
     
         10 . The plating method according to  claim 6 , wherein the metal ion is metal ion other than copper ion.