Reaction chamber component, preparation method, and reaction chamber

Abstract

A method for preparing reaction chamber component includes providing a substrate; forming an oxide film layer from a surface of the substrate by performing an anodizing treatment with mixed-acids; performing a sealing process to the oxide film layer to seal pores formed in the oxide film layer; performing a sandblasting process to the oxide film layer to provide the oxide film layer with a predetermined roughness for receiving a ceramic layer; and forming the ceramic layer on the oxide film layer.

What is claimed is: 
     
         1 . A method for preparing reaction chamber component, comprising:
 providing a substrate;   forming an oxide film layer from a surface of the substrate by performing an anodizing treatment with mixed-acids;   performing a sealing process to the oxide film layer to seal pores formed in the oxide film layer;   performing a sandblasting process to the oxide film layer to provide the oxide film layer with a predetermined roughness for receiving a ceramic layer; and   forming the ceramic layer on the oxide film layer.   
     
     
         2 . The method according to  claim 1 , wherein the substrate includes an aluminum alloy having a silicon content of less than 0.25% by weight. 
     
     
         3 . The method according to  claim 1 , further comprising:
 preheating the substrate at a temperature of 30° C. to 40° C. for preparing the surface of the substrate for forming the oxide film layer.   
     
     
         4 . The method according to  claim 1 , wherein the mixed-acids at least include nitric acid. 
     
     
         5 . The method according to  claim 4 , wherein the mixed-acids include nitric acid and oxalic acid, and a ratio of mass percentage of the nitric acid to mass percentage of the oxalic acid ranges from 0.8 to 1.2. 
     
     
         6 . The method according to  claim 5 , wherein the ratio is about 1. 
     
     
         7 . The method according to  claim 5 , wherein forming the oxide film layer comprises:
 placing the substrate in an electroplating solution containing the nitric acid and the oxalic acid for the anodizing treatment to form the oxide film layer.   
     
     
         8 . The method according to  claim 1 , wherein a thickness of the oxide film layer ranges from 50 μm to 60 μm. 
     
     
         9 . The method according to  claim 1 , wherein the pores in the oxide film layer include columnar pore structures, wherein the columnar pore structures are filled with hydrated alumina to seal the oxide film layer. 
     
     
         10 . The method according to  claim 1 , wherein the sandblasting process includes a plasma sandblasting process, followed by a cleaning process of the oxide film layer. 
     
     
         11 . The method according to  claim 1 , wherein the predetermined roughness the oxide film layer for receiving the ceramic layer is controlled between 3.2 μm to 6.3 μm by the sandblasting process. 
     
     
         12 . The method according to  claim 1 , wherein the ceramic layer is formed by:
 selecting ceramic powder with a preset purity and a preset particle size,   spraying the ceramic powder to a surface of the oxide film layer; and   annealing the ceramic layer.   
     
     
         13 . The method according to  claim 12 , wherein:
 the preset purity is greater than 99.99%; and   a value range of the preset particle size is 5 μm-10 μm.   
     
     
         14 . The method according to  claim 1 , wherein the ceramic layer comprises yttrium oxide or zirconium oxide. 
     
     
         15 . The method according to  claim 1 , wherein a thickness of the ceramic layer ranges from 50 μm to 200 μm. 
     
     
         16 . A reaction chamber component, comprising:
 a substrate;   an oxide film layer on a surface of the substrate, wherein the oxide film layer includes pore structures;   hydrated alumina filled in the pore structures to seal the oxide film layer; and   a ceramic layer on the sealed oxide film layer.   
     
     
         17 . The component according to  claim 16 , wherein the substrate includes an aluminum alloy having a silicon content of less than 0.25% by weight. 
     
     
         18 . The component according to  claim 16 , wherein a thickness of the oxide film layer ranges from 50 μm to 60 μm. 
     
     
         19 . The component according to  claim 16 , wherein the sealed oxide film layer has a predetermined roughness between 3.2 μm to 6.3 μm for receiving the ceramic layer. 
     
     
         20 . The component according to  claim 16 , wherein the ceramic layer comprises yttrium oxide or zirconium oxide.