Photolithography method and method of manufacturing semiconductor device using the same

Abstract

A photolithograph method is provided. The photolithograph method may include forming a photoresist pattern on a substrate and conformally forming a liner layer on the photoresist pattern, wherein the forming of the liner layer includes a deposition process of reacting an initiator and a monomer with each other, the monomer includes multiple bonds between carbon atoms, the initiator includes a material that forms a radical by thermal decomposition, a copolymer is formed by an initiating reaction between the radical and the monomer, and the liner layer includes the copolymer.

What is claimed is: 
     
         1 . A photolithograph method comprising:
 forming a photoresist pattern on a substrate; and   conformally forming a liner layer on the photoresist pattern,   wherein the forming of the liner layer includes a deposition process of reacting an initiator and a monomer with each other,   wherein the monomer includes multiple bonds between carbon atoms,   wherein the initiator includes a material that forms a radical by thermal decomposition,   wherein a copolymer is formed by an initiating reaction between the radical and the monomer, and   wherein the liner layer includes the copolymer.   
     
     
         2 . The photolithography method of  claim 1 , wherein (a partial pressure of the monomer)/(a saturation pressure of the monomer) is in a range of from 0.01 to 0.2. 
     
     
         3 . The photolithography method of  claim 1 , further comprising:
 etching back the liner layer and the photoresist pattern after forming the liner layer to remove a portion of the liner layer and a portion of the photoresist pattern;   performing a patterning process using the liner layer and the photoresist pattern as a mask; and   removing the liner layer and the photoresist pattern.   
     
     
         4 . The photolithography method of  claim 3 , wherein the photoresist pattern and the liner layer are removed by a single etching process. 
     
     
         5 . The photolithography method of  claim 4 ,
 wherein, in the etching process, an etching ratio of the liner layer to the photoresist pattern is in a range of from 0.8 to 1.2.   
     
     
         6 . The photolithography method of  claim 1 ,
 wherein the forming of the liner layer includes an initiated chemical vapor deposition process (iCVD).   
     
     
         7 . The photolithography method of  claim 1 , wherein the initiator includes a compound of Formula 1: 
       
         
           
           
               
               
           
         
         wherein R1 and R2 are each independently an alkyl group having 1 to 5 carbon atoms, an alkynyl group having 2 to 15 carbon atoms, or a substituted or unsubstituted carbonyl group. 
       
     
     
         8 . The photolithography method of  claim 1 , wherein the monomer includes a compound of Formula 2: 
       
         
           
           
               
               
           
         
         wherein R3 and R4 are each independently hydrogen, an alkyl group having 1 to 15 carbon atoms, an alkynyl group having 1 to 15 carbon atoms, an aryl group having 1 to 15 carbon atoms, a substituted or unsubstituted carboxyl group, a substituted or unsubstituted carbonyl group, or a substituted or unsubstituted alkoxy group. 
       
     
     
         9 . The photolithography method of  claim 1 ,
 wherein the initiator includes at least one of tert-butyl peroxide (TBPO), tert-amylperoxide, tert-butykperoxybenzoate, and perfluorooctanesulfonyl fluoride.   
     
     
         10 . The photolithography method of  claim 1 ,
 wherein the monomer includes at least one of divinylbenzene (DVB), cyclohexyl methacrylate, glycidyl methacrylate, hydroxyethyl methacrylate, 2-Hydroxyethyl acrylate (HEA), methacrylic anhydride, ethylene glycol dimethacrylate, 1,3-butanediol diacrylate, 1,3,5,7-tetravinyl-3,5,7-tetramethyl, vinylimidazole, acrylic acid, N-vinyl-2-pyrrolidone, and 1H, 1H,2H,2H-perfluorodecyl methacrylate.   
     
     
         11 . A method of manufacturing a semiconductor device, the method comprising:
 forming a photoresist pattern on a substrate;   heating the substrate;   conformally forming a liner layer on the substrate and the photoresist pattern;   etching back the liner layer and the photoresist pattern to remove a portion of the liner layer and a portion of the photoresist pattern;   performing a patterning process using the liner layer and the photoresist pattern as a mask; and   removing the liner layer and the photoresist pattern by performing an etching process,   wherein the forming of the liner layer includes a deposition process of reacting an initiator and a monomer with each other,   wherein the monomer includes multiple bonds between carbon atoms,   wherein the initiator includes a material that forms a radical by thermal decomposition,   wherein a copolymer is formed by an initiating reaction between the radical and the monomer, and   wherein the liner layer includes the copolymer.   
     
     
         12 . The method of  claim 11 , wherein (a partial pressure of the monomer)/(a saturation pressure of the monomer) is in a range of from 0.01 to 0.2. 
     
     
         13 . The method of  claim 11 , wherein, in the etching process, an etching ratio of the liner layer to the photoresist pattern is in a range of from 0.8 to 1.2. 
     
     
         14 . The method of  claim 11 , wherein the initiator includes a compound of Formula 1: 
       
         
           
           
               
               
           
         
         wherein each of R1 and R2 is an alkyl group having 1 to 5 carbon atoms, an alkynyl group having 2 to 15 carbon atoms, or a substituted or unsubstituted carbonyl group. 
       
     
     
         15 . The method of  claim 11 , wherein the monomer includes a compound of Formula 2: 
       
         
           
           
               
               
           
         
         where each of R3 and R4 is hydrogen, an alkyl group having 1 to 15 carbon atoms, an alkynyl group having 1 to 15 carbon atoms, an aryl group having 1 to 15 carbon atoms, a substituted or unsubstituted carboxyl group, a substituted or unsubstituted carbonyl group, or a substituted or unsubstituted alkoxy group. 
       
     
     
         16 . The method of  claim 11 , wherein the initiator includes at least one of tert-butyl peroxide (TBPO), tert-amylperoxide, tert-butykperoxybenzoate, and perfluorooctanesulfonyl fluoride. 
     
     
         17 . The method of  claim 11 , wherein the monomer includes at least one of divinylbenzene (DVB), cyclohexyl methacrylate, glycidyl methacrylate, hydroxyethyl methacrylate, 2-Hydroxyethyl acrylate (HEA), methacrylic anhydride, ethylene glycol dimethacrylate, 1,3-butanediol diacrylate, 1,3,5,7-tetravinyl-1,3,5,7-tetramethyl, vinylimidazole, acrylic acid, N-vinyl-2-pyrrolidone, and 1H,1H,2H,2H-perfluorodecyl methacrylate. 
     
     
         18 . A method of manufacturing a semiconductor device, the method comprising:
 forming a stacked pattern on a substrate, the stacked pattern including active layers and sacrificial layers alternately stacked with each other;   forming a mask pattern on the substrate;   heating the substrate to form a liner layer covering the substrate and the mask pattern;   etching back the liner layer and the mask pattern to remove a portion of the liner layer and a portion of the mask pattern;   performing a patterning process using the liner layer and the mask pattern as a mask to form a trench in the substrate, the trench defining an active pattern; and   removing the liner layer and the mask pattern,   wherein the forming of the liner layer includes a deposition process of reacting an initiator and a monomer with each other,   wherein the monomer includes multiple bonds between carbon atoms,   wherein the initiator includes a material that forms a radical by thermal decomposition,   wherein a copolymer is formed by an initiating reaction between the radical and the monomer, and   wherein the liner layer includes the copolymer.   
     
     
         19 . The method of  claim 18 , wherein (a partial pressure of the monomer)/(a saturation pressure of the monomer) is in a range of from 0.01 to 0.2. 
     
     
         20 . The method of  claim 18 , wherein, in the removing of the liner layer and the mask pattern, an etching ratio of the liner layer to the mask pattern is in a range of from 0.8 to 1.2.