Silicon precursor compound and preparation method therefor, and silicon-containing thin film preparation method using silicon precursor

Abstract

A silicon precursor compound according to Formula I as described herein is used to form a silicon-containing thin film having excellent quality. A preparation method therefor, and a silicon-containing thin film preparation method using the silicon precursor compound are also described.

1 . A silicon precursor compound, which is represented by the following Formula 1: 
       
         
           
           
               
               
           
         
         wherein R 0 , R 5 , and R 6  are each independently a linear or branched, saturated or unsaturated hydrocarbon group having 1 to 4 carbon atoms or an isomer thereof, R 1 , R 2 , R 3 , and R 4  are each independently hydrogen (H), a halogen, or a linear or branched, saturated or unsaturated hydrocarbon group having 1 to 4 carbon atoms, and X is hydrogen (H) or a halogen. 
       
     
     
         2 . The silicon precursor compound of  claim 1 , wherein the silicon precursor compound is selected from the following compounds (1) to (36): 
       
         
           
           
               
               
           
         
         
           
           
               
               
           
         
         
           
           
               
               
           
         
       
     
     
         3 . A method for preparing a silicon precursor compound, which comprises:
 reacting a chlorosilane derivative with a primary amine to form a first compound;   reacting the first compound with an alkyl-lithium (Alkyl-Li) to form a second compound comprising lithium; and   reacting the second compound with a silane compound to prepare a silicon precursor compound represented by the following Formula 1:   
       
         
           
           
               
               
           
         
         wherein R 0 , R 5 , and R 6  are each independently a linear or branched, saturated or unsaturated hydrocarbon group having 1 to 4 carbon atoms or an isomer thereof, R 1 , R 2 , R 3 , and R 4  are each independently hydrogen (H), a halogen, or a linear or branched, saturated or unsaturated hydrocarbon group having 1 to 4 carbon atoms, and X is hydrogen (H) or a halogen. 
       
     
     
         4 . The method according to  claim 3 , wherein the first compound is represented by the following Formula 7: 
       
         
           
           
               
               
           
         
         wherein R 0  is each independently a linear or branched, saturated or unsaturated hydrocarbon group having 1 to 4 carbon atoms or an isomer thereof; and R 2 , R 3 , and R 4  are each independently hydrogen (H), a halogen, or a linear or branched, saturated or unsaturated hydrocarbon group having 1 to 4 carbon atoms. 
       
     
     
         5 . The method according to  claim 3 , wherein, when X and R 1  in the silicon precursor compound represented by Formula 1 are each a halogen, and wherein the method further comprises reacting the precursor compound with a metal hydride. 
     
     
         6 . The method according to  claim 3 , wherein the silane compound is produced by reacting a chlorosilane derivative with a secondary amine. 
     
     
         7 . A method for preparing a silicon-containing thin film, which comprises forming the silicon-containing thin film using a silicon precursor compound represented by the following Formula 1: 
       
         
           
           
               
               
           
         
         wherein R 0 , R 5 , and R 6  are each independently a linear or branched, saturated or unsaturated hydrocarbon group having 1 to 4 carbon atoms or an isomer thereof, R 1 , R 2 , R 3 , and R 4  are each independently hydrogen (H), a halogen, or a linear or branched, saturated or unsaturated hydrocarbon group having 1 to 4 carbon atoms, and X is hydrogen (H) or a halogen. 
       
     
     
         8 . The method for preparing a silicon-containing thin film of  claim 7 , wherein the silicon precursor compound is selected from the following compounds (1) to (36): 
       
         
           
           
               
               
           
         
         
           
           
               
               
           
         
         
           
           
               
               
           
         
       
     
     
         9 . The method according to  claim 7 , wherein the silicon-containing thin film is deposited by chemical vapor deposition (CVD) or atomic layer deposition (ALD). 
     
     
         10 . The method according to  claim 7 , wherein the silicon-containing thin film is selected from the group consisting of a silicon oxide film (SiO 2 ), a silicon oxycarbide film (SiOC), a silicon nitride film (SiN), a silicon oxynitride film (SiON), a silicon carbonitride film (SiCN), and a silicon carbonized film (SiC). 
     
     
         11 . The method according to  claim 9 , wherein the silicon-containing thin film is a silicon oxide (SiO 2 ) film, and the silicon oxide film is deposited by atomic layer deposition,
 wherein the atomic layer deposition comprises providing a substrate to a reactor; introducing the silicon precursor compound into the reactor; purging the reactor with a purge gas; introducing an oxygen source into the reactor to react with the silicon precursor compound to form a silicon oxide film; and purging the reactor with the purge gas.   
     
     
         12 . The method according to  claim 11 , wherein the purge gas is selected from the group consisting of nitrogen, helium, argon, and mixtures thereof. 
     
     
         13 . The method according to  claim 11 , wherein the oxygen source is selected from the group consisting of oxygen, peroxide, oxygen plasma, water vapor, water vapor plasma, hydrogen peroxide, ozone source, and mixtures thereof. 
     
     
         14 . The method according to  claim 11 , wherein the oxygen source comprises plasma. 
     
     
         15 . The method according to  claim 14 , wherein the plasma is generated in situ. 
     
     
         16 . The method according to  claim 11 , wherein the atomic layer deposition is carried out at one or more temperatures of about 500° C. or lower. 
     
     
         17 . The method according to  claim 9 , wherein the silicon-containing thin film is a silicon nitride (SiN) film, and the silicon nitride film is deposited by plasma-enhanced atomic layer deposition,
 wherein the plasma-enhanced atomic layer deposition comprises providing a substrate to a reactor; introducing the silicon precursor compound into the reactor; purging the reactor with a purge gas; introducing a nitrogen-containing plasma source and an inert gas into the reactor to react with the silicon precursor compound to form a silicon nitride film; and purging the reactor with a purge gas.   
     
     
         18 . The method according to  claim 17 , wherein the nitrogen-containing plasma source is selected from the group consisting of nitrogen plasma, nitrogen and argon mixed plasma, ammonia plasma, nitrogen and ammonia mixed plasma, ammonia and helium mixed plasma, ammonia and argon mixed plasma, ammonia and nitrogen mixed plasma, NF 3  plasma, organic amine plasma, and mixtures thereof. 
     
     
         19 . The method for preparing a silicon-containing thin film of  claim 17 , wherein the method is carried out at one or more temperatures of about 400° C. or lower.