Inventor · disambiguated record
Byeong-Il Yang
Also filed as: YANG BYEONG-IL
14 granted patents·5 pending applications·31 citations·filing 2014–2025
87Inventor score
Top patents by PatentIndex Score
19 records- 0193US9245740B2Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the sameDNF CO LTD·Filed 2014·Granted Jan 26, 2016·18 cites·3 claims
- 0287US11390635B2Composition for depositing silicon-containing thin film and method for producing silicon-containing thin film using the sameDNF CO LTD·Filed 2018·Granted Jul 19, 2022·3 cites·14 claims
- 0384US9809608B2Cyclodisilazane derivative, method for preparing the same and silicon-containing thin film using the sameDNF CO LTD·Filed 2015·Granted Nov 7, 2017·4 cites·12 claims
- 0482US9586979B2Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the sameDNF CO LTD·Filed 2014·Granted Mar 7, 2017·3 cites·6 claims
- 0570US10894799B2Composition for depositing silicon-containing thin film including disilylamine compound and method for manufacturing silicon-containing thin film using the sameDNF CO LTD·Filed 2018·Granted Jan 19, 2021·1 cites·13 claims
- 0669US11749522B2Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin using the sameDNF CO LTD·Filed 2022·Granted Sep 5, 2023·0 cites·7 claims
- 0765US10202407B2Trisilyl amine derivative, method for preparing the same and silicon-containing thin film using the sameDNF CO LTD·Filed 2015·Granted Feb 12, 2019·1 cites·12 claims
- 0865US9916974B2Amino-silyl amine compound and the manufacturing method of dielectric film containing Si—N bond by using atomic layer depositionDNF CO LTD·Filed 2015·Granted Mar 13, 2018·1 cites·16 claims
- 0963US2025051914A1Silicon precursor compound and preparation method therefor, and silicon-containing thin film preparation method using silicon precursorM CHEMICALS INC·Filed 2024·Application pending·0 cites
- 1061US11319333B2Disilylamine compound, method for preparing the same, and composition for depositing silicon-containing thin film including the sameDNF CO LTD·Filed 2018·Granted May 3, 2022·0 cites·11 claims
- 1161US2025230176A1Silicon precursor compound in asymmetric structure, method for preparing the same, and method for preparing a silicon-containing thin filmMERCK PATENT GMBH·Filed 2025·Application pending·0 cites
- 1257US12255075B2Atomic layer etching method using ligand exchange reactionSK HYNIX INC·Filed 2023·Granted Mar 18, 2025·0 cites·7 claims
- 1356US11358974B2Silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the compositionDNF CO LTD·Filed 2018·Granted Jun 14, 2022·0 cites·11 claims
- 1454US11901191B2Atomic layer etching method and semiconductor device manufacturing method using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 13, 2024·0 cites·19 claims
- 1553US11393676B2Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin film using the sameDNF CO LTD·Filed 2018·Granted Jul 19, 2022·0 cites·14 claims
- 1651US12398459B2Silicon metal oxide encapsulation film comprising metal or metal oxide in thin film, and manufacturing method thereforDNF CO LTD·Filed 2020·Granted Aug 26, 2025·0 cites·15 claims
- 1750US2020111665A1Composition for depositing silicon-containing thin film and method for manufacturing silicon-containing thin film using the sameDNF CO LTD·Filed 2018·Application pending·0 cites
- 1836US2019249296A1Method for manufacturing silicon nitride thin film using plasma atomic layer depositionDNF CO LTD·Filed 2017·Application pending·0 cites
- 1935US2018230591A1Method for manufacturing silicon nitride thin film using plasma atomic layer deposition methodDNF CO LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →