Composition for depositing silicon-containing thin film and method for manufacturing silicon-containing thin film using the same

Abstract

Provided are a composition containing a silylamine compund and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a silylamine compound capable of forming a silicon-containing thin film having a significantly excellent water vapor transmission rate to thereby be usefully used as a precursor of the silicon-containing thin film and an encapsulant of a display, and a method for manufacturing a silicon-containing thin film using the same.

1 . A composition for depositing a silicon-containing thin film, the composition comprising a silylamine compound represented by the following Chemical Formula 1: 
       
         
           
           
               
               
           
         
         in Chemical Formula 1, 
         R 1  to R 4  are each independently hydrogen, C1-C7alkyl, or C2-C7alkenyl, or R 1  and R 2 , and R 3  and R 4  are each independently linked to each other to form a ring; and 
         R 5  and R 6  are each independently C1-C7alkyl, or C2-C7)alkenyl. 
       
     
     
         2 . The composition of  claim 1 , wherein R 5  and R 6  are each independently C1-C5alkyl. 
     
     
         3 . The composition of  claim 1 , wherein the silylamine compound represented by Chemical Formula 1 is represented by Chemical Formula 2 or 3: 
       
         
           
           
               
               
           
         
         in Chemical Formulas 2 and 3, 
         R 11  to R 14  are each independently hydrogen, C1-C5alkyl, or C2-C5alkenyl; 
         R 5  and R 6  are each independently C1-C5alkyl, or C2-C5alkenyl; and 
         n and m are each independently an integer of 1 to 7. 
       
     
     
         4 . The composition of  claim 3 , wherein R 5  and R 6  are each independently C1-C5alkyl; and
 n and m are each independently an integer of 1 to 4.   
     
     
         5 . The composition of  claim 1 , wherein the silylamine compound is selected from the following compounds: 
       
         
           
           
               
               
           
         
       
     
     
         6 . A method for manufacturing a silicon-containing thin film, using a composition comprising a silylamine compound represented by the following Chemical Formula 1: 
       
         
           
           
               
               
           
         
         in Chemical Formula 1, 
         R 1  to R 4  are each independently hydrogen, C1-C7alkyl, or C2-C7alkenyl, or R 1  and R 2 , and R 3  and R 4  are each independently linked to each other to form a ring; and 
         R 5  and R 6  are each independently C1-C7alkyl, or C2-C7)alkenyl. 
       
     
     
         7 . The method of  claim 6 , wherein deposition is performed by an atomic layer deposition method, a chemical vapor deposition method, a metal-organic chemical vapor deposition method, a low-pressure chemical vapor deposition method, a plasma-enhanced chemical vapor deposition method, or a plasma-enhanced atomic layer deposition method. 
     
     
         8 . The method of  claim 6 , wherein the silicon-containing thin film is a silicon oxide film, a silicon oxy carbide film, a silicon nitride film, a silicon oxy nitride film, a silicon carbonitride film, or a silicon carbide film. 
     
     
         9 . The method of  claim 6 , comprising:
 a) maintaining a temperature of a substrate mounted in a chamber at 30 to 500° C.;   b) contacting the composition of any one of  claims 1  to  5  with the substrate to adsorb the composition in the substrate; and   c) injecting a reaction gas into the substrate in which the composition is adsorbed to form a silicon-containing thin film.   
     
     
         10 . The method of  claim 9 , wherein the reaction gas is supplied after being activated by generating plasma with a plasma power of 50 to 1000 W. 
     
     
         11 . The method of  claim 6 , wherein R 5  and R 6  are each independently C1-C5alkyl. 
     
     
         12 . The method of  claim 6 , wherein the silylamine compound represented by Chemical Formula 1 is represented by Chemical Formula 2 or 3: 
       
         
           
           
               
               
           
         
         in Chemical Formulas 2 and 3, 
         R 11  to R 14  are each independently hydrogen, C1-C5alkyl, or C2-C5alkenyl; 
         R 5  and R 6  are each independently C1-C5alkyl, or C2-C5alkenyl; and 
         n and m are each independently an integer of 1 to 7. 
       
     
     
         13 . The method of  claim 12 , wherein R 5  and R 6  are each independently C1-C5alkyl; and
 n and m are each independently an integer of 1 to 4.   
     
     
         14 . The method of  claim 6 , wherein the silylamine compound is selected from the following compounds: