Inventor · disambiguated record
Myong Woon Kim
Also filed as: KIM MYONG WOON
27 granted patents·5 pending applications·37 citations·filing 2007–2022
93Inventor score
Files withDNF CO LTD20SAMSUNG ELECTRONICS CO LTD8SAMSUNG CORNING PREC MAT CO2PARK HYE-YOUNG1SAMSUNG CORNING PREC MAT CO LTD1
Top patents by PatentIndex Score
32 records- 0193US9245740B2Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the sameDNF CO LTD·Filed 2014·Granted Jan 26, 2016·18 cites·3 claims
- 0287US11390635B2Composition for depositing silicon-containing thin film and method for producing silicon-containing thin film using the sameDNF CO LTD·Filed 2018·Granted Jul 19, 2022·3 cites·14 claims
- 0384US9809608B2Cyclodisilazane derivative, method for preparing the same and silicon-containing thin film using the sameDNF CO LTD·Filed 2015·Granted Nov 7, 2017·4 cites·12 claims
- 0482US9586979B2Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the sameDNF CO LTD·Filed 2014·Granted Mar 7, 2017·3 cites·6 claims
- 0577US10134583B2Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 20, 2018·3 cites·20 claims
- 0675US10224200B2Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 5, 2019·2 cites·8 claims
- 0774US10882873B2Method of forming tin-containing material film and method of synthesizing a tin compoundSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 5, 2021·0 cites·12 claims
- 0870US10894799B2Composition for depositing silicon-containing thin film including disilylamine compound and method for manufacturing silicon-containing thin film using the sameDNF CO LTD·Filed 2018·Granted Jan 19, 2021·1 cites·13 claims
- 0969US11749522B2Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin using the sameDNF CO LTD·Filed 2022·Granted Sep 5, 2023·0 cites·7 claims
- 1066US2018155372A1Tin compound, method of synthesizing the same, tin precursor compound for atomic layer deposition, and method of forming tin-containing material filmSAMSUNG ELECTRONICS CO LTD·Filed 2017·Application pending·0 cites
- 1165US10202407B2Trisilyl amine derivative, method for preparing the same and silicon-containing thin film using the sameDNF CO LTD·Filed 2015·Granted Feb 12, 2019·1 cites·12 claims
- 1265US9916974B2Amino-silyl amine compound and the manufacturing method of dielectric film containing Si—N bond by using atomic layer depositionDNF CO LTD·Filed 2015·Granted Mar 13, 2018·1 cites·16 claims
- 1361US11319333B2Disilylamine compound, method for preparing the same, and composition for depositing silicon-containing thin film including the sameDNF CO LTD·Filed 2018·Granted May 3, 2022·0 cites·11 claims
- 1460US8525244B2Germanium compound, semiconductor device fabricated using the same, and methods of forming the samePARK HYE-YOUNG·Filed 2007·Granted Sep 3, 2013·0 cites·14 claims
- 1559US11062940B2Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 13, 2021·0 cites·18 claims
- 1659US10214610B2Polymer and composition containing sameDNF CO LTD·Filed 2014·Granted Feb 26, 2019·1 cites·11 claims
- 1756US11358974B2Silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the compositionDNF CO LTD·Filed 2018·Granted Jun 14, 2022·0 cites·11 claims
- 1854US11459653B2Method for manufacturing molybdenum-containing thin film and molybdenum-containing thin film manufactured therebyDNF CO LTD·Filed 2019·Granted Oct 4, 2022·0 cites·13 claims
- 1954US10361118B2Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 23, 2019·0 cites·7 claims
- 2054US8858694B2Zinc oxide precursor containing alkyl zinc halide and method of depositing zinc oxide-based thin film using the sameSAMSUNG CORNING PREC MAT CO·Filed 2012·Granted Oct 14, 2014·0 cites·6 claims
- 2153US11393676B2Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin film using the sameDNF CO LTD·Filed 2018·Granted Jul 19, 2022·0 cites·14 claims
- 2253US10913755B2Transition metal compound, preparation method therefor, and composition for depositing transition metal-containing thin film, containing sameDNF CO LTD·Filed 2017·Granted Feb 9, 2021·0 cites·7 claims
- 2351US11447859B2Metal triamine compound, method for preparing the same, and composition for depositing metal-containing thin film including the sameDNF CO LTD·Filed 2018·Granted Sep 20, 2022·0 cites·15 claims
- 2451US8932389B2Zinc oxide precursor and method of depositing zinc oxide-based thin film using the sameSAMSUNG CORNING PREC MAT CO·Filed 2012·Granted Jan 13, 2015·0 cites·5 claims
- 2550US2020111665A1Composition for depositing silicon-containing thin film and method for manufacturing silicon-containing thin film using the sameDNF CO LTD·Filed 2018·Application pending·0 cites
- 2645US9514857B2Zinc oxide precursor and method of depositing zinc oxide-based thin film using the sameSAMSUNG CORNING PREC MAT CO LTD·Filed 2013·Granted Dec 6, 2016·0 cites·13 claims
- 2744US11230492B2Anti-glare glass and manufacturing method thereforDNF CO LTD·Filed 2016·Granted Jan 25, 2022·0 cites·7 claims
- 2843US11827650B2Method of manufacturing ruthenium-containing thin film and ruthenium-containing thin film manufactured therefromDNF CO LTD·Filed 2018·Granted Nov 28, 2023·0 cites·6 claims
- 2943US9941114B2Organometallic precursors and methods of forming thin layers using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 10, 2018·0 cites·20 claims
- 3042US2020231610A1Tin compound, tin precursor compound for forming a tin-containing layer, and methods of forming a thin layer using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
- 3136US2019249296A1Method for manufacturing silicon nitride thin film using plasma atomic layer depositionDNF CO LTD·Filed 2017·Application pending·0 cites
- 3235US2018230591A1Method for manufacturing silicon nitride thin film using plasma atomic layer deposition methodDNF CO LTD·Filed 2016·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Myong Woon Kim files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →