Inventor · disambiguated record
Sang Ick Lee
Also filed as: LEE SANG ICK · LEE SANG K
51 granted patents·18 pending applications·138 citations·filing 2001–2023
97Inventor score
Files withDNF CO LTD23HYNIX SEMICONDUCTOR INC10SAMSUNG ELECTRONICS CO LTD8SK INNOVATION CO LTD7SABIC SK NEXLENE COMPANY PTE LTD5
Top patents by PatentIndex Score
69 records- 0193US9245740B2Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the sameDNF CO LTD·Filed 2014·Granted Jan 26, 2016·18 cites·3 claims
- 0287US11390635B2Composition for depositing silicon-containing thin film and method for producing silicon-containing thin film using the sameDNF CO LTD·Filed 2018·Granted Jul 19, 2022·3 cites·14 claims
- 0384US9809608B2Cyclodisilazane derivative, method for preparing the same and silicon-containing thin film using the sameDNF CO LTD·Filed 2015·Granted Nov 7, 2017·4 cites·12 claims
- 0482US9586979B2Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the sameDNF CO LTD·Filed 2014·Granted Mar 7, 2017·3 cites·6 claims
- 0582US8921499B2Method of preparing ethylene-α-olefin-diene copolymerSHIN DONG CHEOL·Filed 2012·Granted Dec 30, 2014·3 cites·12 claims
- 0678US9120884B2Cyclopenta[b]fluorenyl transition metal compound, catalyst composition containing the same, and method of preparing ethylene homopolymer or copolymer of ethylene and α-olefin using the sameSHIN DONG CHEOL·Filed 2012·Granted Sep 1, 2015·2 cites·6 claims
- 0778US9031799B2Remote electrical safety diagnosis system and apparatusBAE SEOK MYOUNG·Filed 2009·Granted May 12, 2015·13 cites·22 claims
- 0877US10134583B2Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 20, 2018·3 cites·20 claims
- 0975US12482897B2Separator for secondary battery, method for manufacturing the same and lithium secondary battery containing the sameSK INNOVATION CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 1075US10487163B2Cyclopenta[b]fluorenyl transition metal compound, catalyst composition containing the same, and method of preparing ethylene homopolymer or copolymer of ethylene and alpha-olefin using the sameSABIC SK NEXLENE COMPANY PTE LTD·Filed 2019·Granted Nov 26, 2019·0 cites·1 claims
- 1175US10224200B2Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 5, 2019·2 cites·8 claims
- 1274US10882873B2Method of forming tin-containing material film and method of synthesizing a tin compoundSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 5, 2021·0 cites·12 claims
- 1374US6933226B2Method of forming a metal gate in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Aug 23, 2005·18 cites·7 claims
- 1473US7145763B2High-voltage electric double layer capacitorKORCHIP CO LTD·Filed 2005·Granted Dec 5, 2006·12 cites·6 claims
- 1570US10894799B2Composition for depositing silicon-containing thin film including disilylamine compound and method for manufacturing silicon-containing thin film using the sameDNF CO LTD·Filed 2018·Granted Jan 19, 2021·1 cites·13 claims
- 1670US10323111B2Cyclopenta[b]fluorenyl transition metal compound, catalyst composition containing the same, and method of preparing ethylene homopolymer or copolymer of ethylene and alpha-olefin using the sameSABIC SK NEXLENE COMPANY PTE LTD·Filed 2017·Granted Jun 18, 2019·0 cites·1 claims
- 1770US6746314B2Nitride CMP slurry having selectivity to nitrideHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jun 8, 2004·11 cites·16 claims
- 1870US2024106073A1Separator coating composition for secondary battery, separator using the same, and electrochemical device including the sameSK INNOVATION CO LTD·Filed 2023·Application pending·0 cites
- 1970US2024167181A1System of recovering lithium precursor and method of recovering lithium precursorSK INNOVATION CO LTD·Filed 2023·Application pending·0 cites
- 2069US11749522B2Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin using the sameDNF CO LTD·Filed 2022·Granted Sep 5, 2023·0 cites·7 claims
- 2166US2018155372A1Tin compound, method of synthesizing the same, tin precursor compound for atomic layer deposition, and method of forming tin-containing material filmSAMSUNG ELECTRONICS CO LTD·Filed 2017·Application pending·0 cites
- 2265US12473647B2Composition for depositing antimony-containing thin film and method for manufacturing antimony-containing thin film using the sameDNF CO LTD·Filed 2022·Granted Nov 18, 2025·0 cites·14 claims
- 2365US10202407B2Trisilyl amine derivative, method for preparing the same and silicon-containing thin film using the sameDNF CO LTD·Filed 2015·Granted Feb 12, 2019·1 cites·12 claims
- 2465US9916974B2Amino-silyl amine compound and the manufacturing method of dielectric film containing Si—N bond by using atomic layer depositionDNF CO LTD·Filed 2015·Granted Mar 13, 2018·1 cites·16 claims
- 2563US12304924B2Silylcyclodisilazane compound and method for manufacturing silicon-containing thin film using the sameDNF CO LTD·Filed 2020·Granted May 20, 2025·0 cites·14 claims
- 2663US9926394B2Cyclopenta[b]fluorenyl transition metal compound, catalyst composition containing the same, and method of preparing ethylene homopolymer or copolymer of ethylene and alpha-olefin using the sameSABIC SK NEXLENE COMPANY PTE LTD·Filed 2015·Granted Mar 27, 2018·0 cites·4 claims
- 2763US7119015B2Method for forming polysilicon plug of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Oct 10, 2006·11 cites·32 claims
- 2862US12384805B2Iodine-containing metal compound and composition for depositing thin film including the sameDNF CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·16 claims
- 2961US11319333B2Disilylamine compound, method for preparing the same, and composition for depositing silicon-containing thin film including the sameDNF CO LTD·Filed 2018·Granted May 3, 2022·0 cites·11 claims
- 3061US7271088B2Slurry composition with high planarity and CMP process of dielectric film using the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Sep 18, 2007·7 cites·14 claims
- 3161US2024396111A1Method for recovering lithium precursor from lithium secondary batterySK INNOVATION CO LTD·Filed 2022·Application pending·0 cites
- 3259US11062940B2Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 13, 2021·0 cites·18 claims
- 3359US10214610B2Polymer and composition containing sameDNF CO LTD·Filed 2014·Granted Feb 26, 2019·1 cites·11 claims
- 3458US2024150191A1Method for recovering lithium precursor from lithium secondary batterySK INNOVATION CO LTD·Filed 2022·Application pending·0 cites
- 3556US11358974B2Silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the compositionDNF CO LTD·Filed 2018·Granted Jun 14, 2022·0 cites·11 claims
- 3654US11459653B2Method for manufacturing molybdenum-containing thin film and molybdenum-containing thin film manufactured therebyDNF CO LTD·Filed 2019·Granted Oct 4, 2022·0 cites·13 claims
- 3754US10361118B2Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 23, 2019·0 cites·7 claims
- 3854US8858694B2Zinc oxide precursor containing alkyl zinc halide and method of depositing zinc oxide-based thin film using the sameSAMSUNG CORNING PREC MAT CO·Filed 2012·Granted Oct 14, 2014·0 cites·6 claims
- 3954US6663480B2Polishing pad for semiconductor and optical parts, and method for manufacturing the sameJEONG HAE-DO·Filed 2001·Granted Dec 16, 2003·8 cites·11 claims
- 4053US11393676B2Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin film using the sameDNF CO LTD·Filed 2018·Granted Jul 19, 2022·0 cites·14 claims
- 4153US10913755B2Transition metal compound, preparation method therefor, and composition for depositing transition metal-containing thin film, containing sameDNF CO LTD·Filed 2017·Granted Feb 9, 2021·0 cites·7 claims
- 4253US6391697B2Method for the formation of gate electrode of semiconductor device using a difference in polishing selection ratio between polymer and oxide filmHYUNDAI ELECTRONICS IND·Filed 2001·Granted May 21, 2002·4 cites·11 claims
- 4351US12398459B2Silicon metal oxide encapsulation film comprising metal or metal oxide in thin film, and manufacturing method thereforDNF CO LTD·Filed 2020·Granted Aug 26, 2025·0 cites·15 claims
- 4451US11447859B2Metal triamine compound, method for preparing the same, and composition for depositing metal-containing thin film including the sameDNF CO LTD·Filed 2018·Granted Sep 20, 2022·0 cites·15 claims
- 4551US8932389B2Zinc oxide precursor and method of depositing zinc oxide-based thin film using the sameSAMSUNG CORNING PREC MAT CO·Filed 2012·Granted Jan 13, 2015·0 cites·5 claims
- 4650US7045450B2Method of manufacturing semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Granted May 16, 2006·4 cites·9 claims
- 4750US6790678B2Method for forming capacitor of ferroelectric random access memoryHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Sep 14, 2004·6 cites·19 claims
- 4850US2020111665A1Composition for depositing silicon-containing thin film and method for manufacturing silicon-containing thin film using the sameDNF CO LTD·Filed 2018·Application pending·0 cites
- 4948US7018924B2CMP slurry compositions for oxide films and methods for forming metal line contact plugs using the sameHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Mar 28, 2006·2 cites·17 claims
- 5045US10919819B2Oligomerization of ethyleneSK INNOVATION CO LTD·Filed 2017·Granted Feb 16, 2021·0 cites·13 claims
Showing the top 50 of 69 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →