Chemical Mechanical Polishing Pad Dresser and Manufacturing Method Thereof

Abstract

The present invention provides a chemical mechanical polishing pad dresser, which comprises: a substrate having an upper surface; and a abrasive layer covering the upper surface of the substrate, and the abrasive layer including a bonding layer and a plurality of abrasive particles embedded in the bonding layer. Each of the abrasive particles has a tip height (H), which is a distance between the highest point of each abrasive particle and a surface of the bonding layer, and there is an average pitch (P) between these abrasive particles; wherein the dresser has a leveling value (R), which is a ratio (H/P) of the tip height (H) to the average pitch (P) of 0.05 to 0.3. The chemical mechanical polishing pad dresser of the present invention can be adjusted for different roughness requirements by controlling the ratio between the tip height and the pitch between the abrasive particles, and different dressers can be manufactured using tip height differences at different pitch, thereby dressing the polishing pad to the appropriate surface roughness.

What is claimed is: 
     
         1 . A chemical mechanical polishing pad dresser, comprising:
 a substrate having an upper surface; and   an abrasive layer covering the upper surface of the substrate, the abrasive layer comprising a bonding layer and a plurality of abrasive particles embedded in the bonding layer, each of the abrasive particles has a tip height (H), which is a distance between the highest point of each abrasive particle and a surface of the bonding layer, and there being an average pitch (P) between these abrasive particles;   wherein the dresser has a leveling value (R), which is a ratio (H/P) of the tip height (H) to the average pitch (P) of 0.05 to 0.3.   
     
     
         2 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the abrasive particles have a particle size(S) of 40 μm to 800 μm. 
     
     
         3 . The chemical mechanical polishing pad dresser according to  claim 2 , wherein the tip height (H) is 2/7 to ½ of the particle size(S), and the tip height (H) is 11 μm to 400 μm. 
     
     
         4 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the average pitch (P) is 200 μm to 1500 μm. 
     
     
         5 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the leveling value (R) is 0.076 to 0.215. 
     
     
         6 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the abrasive particles are arranged on the substrate in an array or a honeycomb. 
     
     
         7 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the material of the substrate is selected from a group consisting of metal, ceramic and polymer resin. 
     
     
         8 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the material of the bonding layer is a brazing material, an electroplating material, a ceramic material, a metal material or a polymer material. 
     
     
         9 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the abrasive particles are selected from a group consisting of natural diamond, synthetic diamond, polycrystalline diamond, cubic boron nitride, aluminum oxide and silicon carbide. 
     
     
         10 . The chemical mechanical polishing pad dresser according to  claim 9 , wherein the tip of the abrasive particle is in a shape of a blade, a cone, an arc, a cylinder, a pyramid or a prism. 
     
     
         11 . A manufacturing method of a chemical mechanical polishing pad dresser, comprising:
 (a) providing a substrate and a abrasive layer having a bonding layer and a plurality of abrasive particles, and the abrasive layer forming on an upper surface of the substrate;   (b) heat-curing the bonding layer, and the abrasive layer fixed on the upper surface of the substrate;   (c) measuring a tip height (H) of each of the abrasive particles and an average pitch (P) between the plurality of abrasive particles; and   (d) controlling a leveling value (R) obtained by a ratio of the tip height (H) to the average pitch (P) to 0.05 to 0.3 to prepare the chemical mechanical polishing pad dresser.   
     
     
         12 . The method according to  claim 11 , wherein the abrasive particles are arranged on the substrate in an array or a honeycomb. 
     
     
         13 . The method according to  claim 11 , wherein the bonding layer is formed on the substrate by brazing, electroplating, ceramic sintering, metal curing or polymer curing.