Reaction chamber for an epitaxial reactor of semiconductor material with non-uniform longitudinal section and reactor

Abstract

The reaction chamber (100A) is used for a reactor for the deposition of semiconductor material on a substrate (62); it extends in a longitudinal direction and comprises a reaction and deposition zone (10) which extends in the longitudinal direction; this zone (10) is defined by susceptor elements (21A, 21B, 21C, 22A, 22B, 31, 32) adapted to be heated by electromagnetic induction; a first susceptor element (21A, 21B, 21C, 22A, 22B) is opposite to a substrate support element (61) of the chamber and has a hole (20) which extends in the longitudinal direction along its whole length; the first susceptor element (21A. 21B, 21C, 22A, 22B) has a non-uniform cross section that depends on its longitudinal position.

1 . A reaction chamber for an epitaxial reactor adapted to deposition of semiconductor material on a substrate comprising:
 a reactor wall which extends in a longitudinal direction;   a reaction and deposition zone extending in said longitudinal direction, wherein said reaction and deposition zone is defined by susceptor elements configured to be heated by electromagnetic induction,   wherein a first susceptor element of said susceptor elements is opposite to a substrate support element and has a hole extending in said longitudinal direction along its whole length,   wherein said first susceptor element has a non-uniform transverse cross-section which depends on its longitudinal position;   wherein the first susceptor element has a first end zone, a second end zone, and an intermediate zone;   wherein said first end zone comprises a first flat plate and a first curved plate which is joined to the first flat plate,   wherein said second end zone comprises a second flat plate and a second curved plate which is joined to the second flat plate, and   wherein said intermediate zone comprises a third flat plate with no curved plate joined to the third flat plate.   
     
     
         2 . The chamber according to  claim 1 , wherein a sectional area at said intermediate zone is smaller than the sectional area at said first end zone and at said second end zone. 
     
     
         3 . The chamber according to  claim 2 , wherein said first end zone and said second end zone are equal. 
     
     
         4 . The chamber according to  claim 1 , wherein said curved plate has a variable thickness. 
     
     
         5 . The chamber according to  claim 1 , wherein said flat plate has a variable thickness. 
     
     
         6 . The chamber according to  claim 1 , wherein said first susceptor element has a first end zone and a second end zone and an intermediate zone,
 wherein within said first end zone, the flat plate has a first thickness,   wherein within the said second end zone the flat plate has a second thickness,   wherein within said intermediate zone the flat plate has a third thickness; and   wherein said third thickness is lower or higher than said first thickness and said second thickness.   
     
     
         7 . The chamber according to  claim 6 , wherein said flat plate within the first end zone or the second end zone has a central lowering or central raising which develops in said longitudinal direction. 
     
     
         8 . The chamber according to  claim 1 , comprising an inductor assembly adapted to create an electromagnetic field for heating said electromagnetic induction susceptor elements, wherein said inductor assembly is arranged to differentially heat a first end zone and a second end zone and an intermediate zone of said first susceptor element. 
     
     
         9 . The chamber according to  claim 1 , further comprising an inductor adapted to conduct heat in a radial direction, located between the first curved plate and the second curved plate. 
     
     
         10 . A reactor comprising the reaction chamber according to  claim 1 .