Cmp pad and cmp equipment

Abstract

The application discloses a CMP pad, comprising: a first surface and a second surface opposite to each other, the first surface being a polishing surface and being circular; and a plurality of monitor windows which penetrate through the first surface and the second surface, each of the monitor windows being uniformly distributed on a first circle, a first annular region centered on the first circle being a monitor window influence zone. The first surface is provided thereon with a groove pattern structure which is used to adjust a brush rate of a slurry on the first surface and causes a decrease in the brush rate of the slurry in the monitor window influence zone to compensate for the influence of the monitor windows on the increase in the brush rate of the slurry in the monitor window influence zone. The application also discloses CMP equipment.

What is claimed is: 
     
         1 . A chemical mechanical polishing (CMP) pad, comprising:
 a first surface and a second surface opposite to each other, the first surface being a polishing surface and being circular; and   a plurality of monitor windows, each of the monitor windows penetrating through the first surface and the second surface, each of the monitor windows being uniformly distributed on a first circle, a first annular region centered on the first circle being a monitor window influence zone, the monitor windows causing an increase in a brush rate of a slurry in the monitor window influence zone,   wherein the first surface is provided thereon with a groove pattern structure which is used to adjust a brush rate of a slurry on the first surface and causes a decrease in the brush rate of the slurry in the monitor window influence zone to compensate for an influence of the monitor windows on the increase in the brush rate of the slurry in the monitor window influence zone.   
     
     
         2 . The CMP pad according to  claim 1 , wherein the groove pattern structure comprises a plurality of concentric circular grooves, and, in a radius direction along the first surface, the concentric circular grooves are isolation structures which are not connected to each other, and the isolation structures serve as structures that cause a decrease in the brush rate of the slurry in the monitor window influence zone. 
     
     
         3 . The CMP pad according to  claim 2 , wherein a width of the monitor window influence zone is less than the diameter of a central pressure adjustment zone of a polishing head. 
     
     
         4 . The CMP pad according to  claim 3 , wherein the width of the monitor window influence zone is less than or equal to 60 mm. 
     
     
         5 . The CMP pad according to  claim 1 , wherein the monitor windows are connected to a light emitting apparatus and a spectrograph of a full vision next generation (FVXE) assembly through optical fibers. 
     
     
         6 . The CMP pad according to  claim 1 , wherein a number of the monitor windows is 3. 
     
     
         7 . The CMP pad according to  claim 2 , wherein the first circle is located in one of the concentric circular grooves. 
     
     
         8 . The CMP pad according to  claim 5 , wherein a polishing object of the pad is a non-metallic layer, and the FVXE assembly is used to monitor a profile of the non-metallic layer in real time. 
     
     
         9 . Chemical mechanical polishing (CMP) equipment, comprising a pad, the pad comprising:
 a first surface and a second surface opposite to each other, the first surface being a polishing surface and being circular; and   a plurality of monitor windows, each of the monitor windows penetrating through the first surface and the second surface, each of the monitor windows being uniformly distributed on a first circle, a first annular region centered on the first circle being a monitor window influence zone, the monitor windows causing an increase in a brush rate of a slurry in the monitor window influence zone,   wherein the first surface is provided thereon with a groove pattern structure which is used to adjust a brush rate of a slurry on the first surface and causes a decrease in the brush rate of the slurry in the monitor window influence zone to compensate for an influence of the monitor windows on the increase in the brush rate of the slurry in the monitor window influence zone,   the second surface of the pad is arranged on a polishing table, and   a polishing head is disposed above the first surface of the pad, which is used to fix a polished member and press a polished surface of the polished member against the first surface.   
     
     
         10 . The CMP equipment according to  claim 9 , wherein the groove pattern structure comprises a plurality of concentric circular grooves, and, in a radius direction along the first surface, the concentric circular grooves are isolation structures which are not connected to each other, and the isolation structures serve as structures that cause a decrease in the brush rate of the slurry in the monitor window influence zone. 
     
     
         11 . The CMP equipment according to  claim 10 , wherein the polishing head is divided into a plurality of pressure adjustment zones, a pressure of each of the pressure adjustment zones is adjusted by a multi-pressure controller, and a width of the monitor window influence zone is less than the diameter of a central pressure adjustment zone of the polishing head. 
     
     
         12 . The CMP equipment according to  claim 11 , wherein the width of the monitor window influence zone is less than or equal to 60 mm. 
     
     
         13 . The CMP equipment according to  claim 9 , wherein the CMP equipment further comprises a full vision next generation (FVXE) assembly, wherein the monitor windows are connected to a light emitting apparatus and a spectrograph of the FVXE assembly through optical fibers. 
     
     
         14 . The CMP equipment according to  claim 9 , wherein a number of the monitor windows is 3. 
     
     
         15 . The CMP equipment according to  claim 10 , wherein the first circle is located in one of the concentric circular grooves. 
     
     
         16 . The CMP equipment according to  claim 13 , wherein a polishing object of the pad is a non-metallic layer formed on the polished member, and the FVXE assembly is used to monitor a profile of the non-metallic layer in real time.