Assignee
SHANGHAI HUALI INTEGRATED CIRCUIT CORP
CN·123 granted patents·95 pending applications·11 citations·filing 2019–2025
Top patents by PatentIndex Score
218 records- 0191US12453120B2HV device and method for manufacturing sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2023·Granted Oct 21, 2025·2 cites·16 claims
- 0289US11329045B2Field effect transistor, method for making the same and layout in process of forming the sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2020·Granted May 10, 2022·3 cites·17 claims
- 0384US11183428B1Method for manufacturing transistor deviceSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2020·Granted Nov 23, 2021·2 cites·10 claims
- 0483US11841723B2Distributed LDO structure without external capacitorSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2022·Granted Dec 12, 2023·1 cites·8 claims
- 0583US2026075870A1Hv device and method for manufacturing sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2025·Application pending·0 cites
- 0681US11637194B2FinFET transistor cut etching process methodSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2020·Granted Apr 25, 2023·2 cites·15 claims
- 0777US2026086460A1Bifunctional molecular group structure for photoresist, and synthesis method, and use method for the sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2025·Application pending·0 cites
- 0875US2026064009A1Method for training opc modeling parameterSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2025·Application pending·0 cites
- 0972US2024269797A1Wafer Temperature Control System and Control Method, Computer Device, and Storage MediumSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 1071US2024269799A1Wafer Polishing Locating Ring and Chemical Mechanical Polishing DeviceSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 1170US2023266659A1OPC MethodSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2023·Application pending·0 cites
- 1268US12574664B2CIS pixel readout circuit structure and method for fabricating the sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Granted Mar 10, 2026·0 cites·15 claims
- 1368US12501648B2HV device and method for manufacturing sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2023·Granted Dec 16, 2025·0 cites·8 claims
- 1467US11133322B2Dual-port static random access memory cell layout structureSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2020·Granted Sep 28, 2021·1 cites·14 claims
- 1565US11855212B2FDSOI device structure and preparation method thereofSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2022·Granted Dec 26, 2023·0 cites·9 claims
- 1664US12500128B2Four-terminal resistance testing structureSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2023·Granted Dec 16, 2025·0 cites·16 claims
- 1764US12369395B2Method for growing multiple layers of source drain epitaxial silicon in FDSOI processSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2023·Granted Jul 22, 2025·0 cites·9 claims
- 1864US2025105060A1Contact filling methodSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 1964US2024379879A1Super flash and method for manufacturing sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 2063US11737268B2Stack capacitor, a flash memory device and a manufacturing method thereofSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2022·Granted Aug 22, 2023·0 cites·6 claims
- 2163US2026082568A1Semiconductor memory and method for manufacturing the sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2025·Application pending·0 cites
- 2263US2026059746A1Semi-floating gate transistor and manufacturing method for the sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2025·Application pending·0 cites
- 2363US2024357791A1Process method for improving sram operating speedSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 2463US2026022087A1Process device using ipa and method thereofSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2025·Application pending·0 cites
- 2562US2025151424A1Cis pixel readout structure and method for fabricating the sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 2662US2026066036A1Efuse memory and operation method thereofSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2025·Application pending·0 cites
- 2762US2026021552A1Cmp pad and cmp equipmentSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2025·Application pending·0 cites
- 2861US12326664B2Dose mapper methodSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2022·Granted Jun 10, 2025·0 cites·6 claims
- 2961US11569385B2FDSOI device structure and preparation method thereofSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2020·Granted Jan 31, 2023·0 cites·10 claims
- 3061US2025107111A1Method for fabricating mos capacitor based on sonos processSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 3161US2024346216A1Auxiliary coloring method for aperiodic pattern quad-color splitSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 3261US2025006743A1Method for improving fdsoi device leakageSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 3360US2025133813A1Method and structure for improving esd performance of metal-gate high-voltage devicesSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 3460US2026059747A1Method for manufacturing sonos memorySHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2025·Application pending·0 cites
- 3560US2026060011A1Method for manufacturing zeroth interlayer dielectricSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2025·Application pending·0 cites
- 3660US2026024599A1Efuse memory cell and memory arraySHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2025·Application pending·0 cites
- 3760US2025226260A1Method for forming hybrid substrate of soi waferSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 3859US12557576B2Method for manufacturing raised strip-shaped active areasSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2023·Granted Feb 17, 2026·0 cites·11 claims
- 3959US2024429107A1Method for reducing measurement errors in critical pattern dimensions of polycrystal layersSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 4058US11444182B2Fin semiconductor device and method for making the sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2021·Granted Sep 13, 2022·0 cites·9 claims
- 4158US2024421210A1High-voltage metal gate device and process method for the sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 4258US2026032992A1Integrated structure of mos transistors having different operation voltages and method for making the sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 4357US12424451B2Method for reducing contact resistanceSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2023·Granted Sep 23, 2025·0 cites·12 claims
- 4457US2024021434A1Method for improving height difference between gatesSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2023·Application pending·0 cites
- 4557US2025022717A1Method for adjusting linewidth due to pattern load effect in sadp mandrel etchingSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 4657US2025031461A1Surface modification method for reducing wafer defectsSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 4757US2025142819A1Method for manufacturing nor flashSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 4857US2023332328A1Reaction Device for Improving Epitaxial Growth UniformitySHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2023·Application pending·0 cites
- 4957US2024096992A1Mv device and method for manufacturing sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2023·Application pending·0 cites
- 5057US2024429059A1Method for improving residue formation after mandrel removalSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
Showing the top 50 of 218 patent records by PatentIndex Score.
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