Thermally conductive chemical mechanical polishing (cmp) pad

Abstract

Thermally conductive chemical mechanical polishing (CMP) pads are disclosed. In one aspect, a polishing pad for a CMP system includes at least one first material having properties for polishing a wafer and at least one second material configured to increase a heat transfer coefficient (HTC) of the polishing pad.

What is claimed is: 
     
         1 . A polishing pad for a chemical mechanical polishing (CMP) system, comprising:
 at least one first material having properties for polishing a wafer; and   at least one second material configured to increase a heat transfer coefficient (HTC) of the polishing pad.   
     
     
         2 . The polishing pad of  claim 1 , wherein the at least one first material comprises a monomer and the at least one second material comprises a conductive material. 
     
     
         3 . The polishing pad of  claim 1 , wherein the at least one second material is configured to lower a temperature of the polishing pad by about 10-30° C. during polishing of a wafer compared to a comparative polishing pad formed of only the at least one first material. 
     
     
         4 . The polishing pad of  claim 1 , wherein:
 the at least one first material comprises a polymer, an acrylate, an oligomer, a monomer, polyurethane, and/or nylon, and   the at least one second material comprises graphite, graphene, molybdenum, and/or vapor grown carbon nano fibers (CNF).   
     
     
         5 . The polishing pad of  claim 1 , wherein:
 the at least one first material comprises polyurethane, and   the at least one second material comprises vapor grown carbon nano fibers (CNF).   
     
     
         6 . The polishing pad of  claim 5 , wherein the vapor grown CNF is in the range of about wt. %-20 wt. % of the polishing pad. 
     
     
         7 . The polishing pad of  claim 1 , wherein the thermal conductivity of the polishing pad is at least about 2 W/mK. 
     
     
         8 . A chemical mechanical polishing (CMP) system, comprising:
 a substrate carrier head configured to retain a wafer;   a polishing pad configured to polish the wafer; and   a platen supporting the polishing pad,   wherein the polishing pad comprises at least one first material having properties for polishing a wafer, and at least one second material configured to increase a heat transfer coefficient (HTC) of the polishing pad.   
     
     
         9 . The CMP system of  claim 8 , further comprising:
 a platen cooling system configured to cool the polishing pad.   
     
     
         10 . The CMP system of  claim 9 , wherein a difference in temperature between first and second sides of the polishing pad during polishing of the wafer is in the range of about 30 to about 40° C. 
     
     
         11 . The CMP system of  claim 8 , wherein the CMP system is configured to employ increased downforce, higher platen speeds, and/or more abrasive slurry chemistries compared to a comparative CMP system using a comparative polishing pad formed of only the at least one first material. 
     
     
         12 . The CMP system of  claim 8 , wherein:
 the at least one first material comprises polyurethane, and   the at least one second material comprises vapor grown carbon nano fibers (CNF).   
     
     
         13 . The CMP system of  claim 12 , wherein the vapor grown CNF is in the range of about 10 wt. %-20 wt. % of the polishing pad. 
     
     
         14 . The CMP system of  claim 8 , wherein the thermal conductivity of the polishing pad is at least about 2 W/mK. 
     
     
         15 . A method of manufacturing a polishing pad for a chemical mechanical polishing (CMP) system, comprising:
 combining at least one first material with at least one second material, the at least one first material having properties for polishing a wafer, the at least one second material is configured to increase a heat transfer coefficient (HTC) of the at least one first material; and   forming a polishing pad using the combination of the at least one first material and the at least one second material.   
     
     
         16 . The method of  claim 15 , wherein forming the polishing pad comprises:
 applying a predetermined pressure and a predetermined amount of heat to the combination of the at least one first material and the at least one second material.   
     
     
         17 . The method of  claim 15 , wherein:
 the at least one first material comprises polyurethane, and   the at least one second material comprises vapor grown carbon nano fibers (CNF).   
     
     
         18 . The method of  claim 17 , wherein the vapor grown CNF is in the range of about 10 wt. %-20 wt. % of the polishing pad. 
     
     
         19 . The method of  claim 15 , wherein the thermal conductivity of the polishing pad is at least about 2 W/mK. 
     
     
         20 . The method of  claim 15 , wherein the at least one second material is configured to lower a temperature of the polishing pad by about 10-30° C. during polishing of a wafer compared to a comparative polishing pad formed of only the at least one first material.