Solid-state photoelectric converter

Abstract

A photoelectric converter in solid-state assembly, comprising the following sections formed on the same substrate: a photoelectric converting section constituted of a number of photoelectric converting elements arranged in an array, each element having a light-receiving surface for input of light-information; and a signal processing circuit section comprising a number of accumulating means, each provided for each of said photoelectric converting elements, for accumulation of signals produced as output from the corresponding photoelectric converting elements, a number of transfer means for transferring the signals accumulated in the corresponding accumulating means to other places, and an array of a number of transistors wired in a two-dimensional matrix to drive a number of the transfer means in time series, said photoelectric converting elements, and the transfer means and the transistors constituting said signal processing circuit section being constituted of thin semi-conductor films.

What we claim is: 
     
       1. A photoelectric converter in solidstate assembly, comprising the following sections formed on the same non-semiconductive substrate: an elongated photoelectric converting section constituted of a number of photoelectric converting elements arranged in an array, each element having a light-receiving surface for input of light-information; and   a signal processing circuit section comprising a corresponding number of accumulating means, each provided for a corresponding one of said photoelectric converting elements, for accumulation of signals produced as output from the corresponding photoelectric converting elements, a corresponding number of transfer means each for transferring the signals accumulated in the corresponding accumulating means, and an array of a corresponding number of transistors wired in a two-dimensional matrix to drive the corresponding number of transfer means in time series;   wherein said photoelectric converting elements, and the transfer means and the transistors constituting said signal processing circuit section are constituted of thin semi-conductor films.   
     
     
       2. A photoelectric converter according to claim 1, wherein each photoelectric converting element comprises an electrode common to each photoelectric converting element, an independent electrode provided independently for each photoelectric converting element, and a photoreceptor layer disposed between these electrodes through a n +  layer for forming an ohmic junction. 
     
     
       3. A photoelectric converter according to claim 2, wherein each independent electrode of the photoelectric converting element is connected in series to the electrode constituting each corresponding accumulating means. 
     
     
       4. A photoelectric converter according to claim 2, wherein each independent electrode of the photoelectric converting element is connected in series to the electrode constituting each corresponding transfer means. 
     
     
       5. A photoelectric converter according to claim 1, wherein the thin film semiconductor comprises amorphous hydrogenated silicon. 
     
     
       6. A photoelectric converter according to claim 1, wherein the thin film semiconductor comprises polycrystalline silicon. 
     
     
       7. A photoelectric converter in solid-state assembly, comprising the following sections formed on the same non-semiconductive substrate: an elongated photoelectric converting section constituted of a number of photoelectric converting elements arranged in an array, each element having a light-receiving surface for input of light-information; and   a signal processing circuit section comprising a corresponding number of accumulating means, each provided for a corresponding one of said photoelectric converting elements, for accumulation of signals produced as output from the corresponding photoelectric converting elements, a corresponding number of diodes for prevention of crosstalk between the photoelectric converting elements, and a corresponding number of transfer means for transferring the signals accumulated in the corresponding accumulating means;   wherein said photoelectric converting elements, said diodes and said transfer means are constituted of thin semi-conductor films.   
     
     
       8. A photoelectric converter according to claim 7, wherein each photoelectric converting element comprises an electrode common to each photoelectric converting element, an independent electrode provided independently for each photoelectric converting element, and a photoreceptor layer disposed between these electrodes through a n +  layer for forming an ohmic junction. 
     
     
       9. A photoelectric converter according to claim 8, wherein each independent electrode of the photoelectric converting element is connected in series to the electrode constituting each corresponding accumulating means. 
     
     
       10. A photoelectric converter according to claim 8, wherein each independent electrode of the photoelectric converting element is connected in series to the electrode constituting each corresponding transfer means. 
     
     
       11. A photoelectric converter according to claim 7, wherein the thin film transistor comprises amorphous hydrogenated silicon. 
     
     
       12. A photoelectric converter according to claim 7, wherein the thin film semiconductor comprises polycrystalline silicon. 
     
     
       13. A photoelectric converter according to claim 7, wherein the transfer means is a transistor. 
     
     
       14. A photoelectric converter according to claim 13, wherein the transistor is internally provided by incorporation within its structure with a diode for prevention of crosstalk. 
     
     
       15. A photoelectric converter in solidstate assembly, comprising the following sections formed on the same non-semiconductive substrate: an elongated photoelectric converting section constituted of a number of photoelectric converting elements arranged in an array, each element having a light-receiving surface for input of light-information; and   a signal processing circuit section comprising a corresponding number of diodes, each provided for one of said photoelectric converting elements directly connected thereto, for prevention of crosstalk between the photoelectric converting elements and a corresponding number of transistors, each being provided for one of said diodes directly connected thereto, for transferring the output signals from the corresponding photoelectric converting elements;   wherein said photoelectric converting elements, said diodes and said transistors are constituted of thin semi-conductor films.   
     
     
       16. A photoelectric converter according to claim 15, wherein the photoelectric converting element is provided by incorporation within its structure with a diode for prevention of crosstalk. 
     
     
       17. A photoelectric converter in solid-state assembly, comprising the following sections formed on the same non-semiconductive substrate: an elongated photoelectic converting section constituted of a number of photoelectric converting elements arranged in an array, each element having a light-receiving surface for input of light-information; and   a signal processing circuit section comprising a corresponding number of accumulating means, each provided for a corresponding one of said photoelectric converting element, for accumulation of signals produced as output from the corresponding photoelectric converting elements, a corresponding number of transfer means for transferring the signals accumulated in the corresponding accumulating means, and a corresponding number of shift registers, each to drive a corresponding one of said transfer means in time series;   wherein said photoelectric converting elements, and the transfer means and the shift registers constituting said signal processing circuit section are constituted of thin semi-conductor films.   
     
     
       18. A photoelectric converter according to claim 17, wherein each photoelectric converting element comprises an electrode common to each photoelectric converting element, an independent electrode provided independently for each photoelectric converting element, and a photoreceptor layer disposed between these electrodes through a n +  layer for forming an ohmic junction. 
     
     
       19. A photoelectric converter according to claim 18, wherein each independent electrode of the photoelectric converting element is connected in series to the electrode constituting each corresponding accumulating means. 
     
     
       20. A photoelectric converter according to claim 18, wherein each independent electrode of the photoelectric converting element is connected in series to the electrode constituting each corresponding transfer means. 
     
     
       21. A photoelectric converter according to claim 17, wherein the thin film transistor comprises amorphous hydrogenated silicon. 
     
     
       22. A photoelectric converter according to claim 17, wherein the thin film semiconductor comprises polycrystalline silicon.