US4539933AExpiredUtility
Chemical vapor deposition apparatus
Est. expiryAug 31, 2003(expired)· nominal 20-yr term from priority
Y10S505/826Y10S505/819C23C 16/481C23C 16/52C23C 16/4411C23C 16/4409
85
PatentIndex Score
50
Cited by
10
References
19
Claims
Abstract
An improved chemical vapor deposition device having heating means substantially surrounding an inner deposition chamber for providing isothermal or precisely controlled gradient temperature conditions therein. The internal components of the chamber are quartz or similar radiant energy transparent material. Also included are special cooling means to protect thermally sensitive seals, structural configurations strengthening areas of glass components subjected to severe stress during operation, and specific designs permitting easy removal and replacement of all glass components exposed to deposition gas.
Claims
exact text as granted — not AI-modifiedThe invention claimed is:
1. A controlled temperature deposition device comprising an inner deposition reaction chamber having gas distribution means for introducing gas into the inner chamber and removing gas therefrom, vacuum chamber means surrounding the inner deposition reaction chamber and spaced from the walls thereof for maintaining a medium vacuum therein, the vacuum chamber means comprising a domed housing and a base cooperating therewith, the material of the domed housing and base being substantially transparent to rdiation, said radiant heating means being positioned over outer surfaces of the domed housing and base surrounding the inner deposition chamber for providing precisely controlled temperatures in the reaction chamber, the radiant heating means and the outer surface of the domed housing and base being in a non-conducting relationship, wherein the domed housing has a domed housing base which engages a support plate, sealing means are positioned between the domed housing base and the support plate to form a vacuum seal, and cooling means engage the outer wall of the domed housing between the domed housing base and the portion thereof surrounding the inner deposition reaction chamber for removing heat therefrom.
2. The controlled temperature deposition device of claim 1 wherein the radiant heating means comprise resistance heating elements spaced apart from the outer surfaces of the domed housing and base.
3. The controlled temperature deposition device of claim 1 wherein the radiant heating means comprise resistance heating element means for providing a uniform heating element temperature.
4. The controlled temperature deposition device of claim 3 wherein the resistance heating element means comprise a plurality of resistance heating elements each having substantially the same cross-sectional area and length.
5. The controlled temperature deposition device of claim 1 wherein the cooling means is a metal conducting element in thermally conducting engagement with the outer wall of the domes housing and a water cooled rim.
6. The controlled temperature deposition device of claim 5 wherein the metal conducting element has a wedge-shaped cross-section.
7. The controlled temperature deposition device of claim 1 wherein the sealing means is an organic polymer seal.
8. A quartz vacuum chamber base for a controlled temperature deposition chamber having an outer domed portion and an axially concentric inner cylinder portion integral therewith, the lower terminus of the outer dome portion comprising an outwardly extending annular mounting flange integrally joined to the sidewall thereof by a connecting wall portion having a thickness of at least 0.029 times the inside diameter of the lower terminus.
9. The quartz vacuum chamber base of claim 8 wherein the outer dome portion has a flattened top surface.
10. The quartz vacuum chamber base of claim 9 wherein the cross-sectional radius of curvature of the top of the outer domed portion taken through the vertical axis thereof is greater than the maximum radius of the sidewall portion in the horizontal plane.
11. The quartz vacuum chamber base of claim 8 wherein the upper portion of the inner cylinder flares outwardly to integrally join the top of the outer domed portion.
12. A controlled temperature deposition device comprising radiant heating means substantially surrounding an inner deposition reaction chamber for providing precisely controlled temperature conditions therein, the inner deposition reaction chamber having gas distribution means for introducing gas into the inner chamber and removing gas therefrom, and vacuum chamber means surrounding the inner deposition reaction chamber and spaced from the walls thereof for maintaining a medium vacuum therein, the vacuum chamber means comprising a domed housing and a base cooperating therewith, the material of the domed housing and base being substantially transparent to radiation, said radiant heating means being positioned over the outer surface of the domed housing and base for providing precisely controlled temperatures in the reaction chamber, the inner deposition chamber having a domed upper portion removably supported on a gas collector means, the gas collector means having a lower cylindrical portion removably supported on an annular support surface.
13. The controlled temperature deposition device of claim 12 wherein the lower edge of the cylindrical portion and the support having mutually engaging means for precisely orienting the gas collector about its vertical axis.
14. The controlled temperature deposition device of claim 12 wherein the gas collector includes an upper plate means for supporting wafers, the plate means having gas passageway means for collecting gas from the deposition chamber.
15. The controlled temperature deposition device of claim 14 wherein the cylindrical portion of the gas collector has a flared upper portion integral therewith, the upper edge thereof engaging the upper plate means, and the gas passageway means communicating with the interior of the flared upper portion of the gas collector.
16. The controlled temperature device of claim 15 wherein the upper edge of the cylindrical portion of the gas collector is integrally joined to the upper plate means.
17. The controlled temperature deposition device of claim 15 wherein the gas passageway means is positioned adjacent the edge of the gas collector.
18. A controlled temperature deposition device comprising radiant heating means substantially surrounding an inner deposition reaction chamber for providing precisely controlled temperature conditions therein, the inner deposition reaction chamber having gas distribution means for introducing gas into the inner chamber and removing gas therefrom, and vacuum chamber means surrounding the inner deposition reaction chamber and spaced from the walls thereof for maintaining a medium vacuum therein, the inner deposition chamber being defined by a domed portion and a plate support means therefor, the support means having a central opening receiving a gas distributor, the flared inlet opening of the gas distributor forming a detachable, sealed engagement with a gas supply outlet means.
19. A controlled temperature deposition device comprising an inner deposition reaction chamber defined by containing walls, and having associated therewith gas distribution means for introducing gas into the inner deposition reaction chamber and for removing gas therefrom, vacuum chamber means surrounding the inner deposition reaction chamber and spaced from the walls thereof for maintaining a medium vacuum therein, the vacuum chamber means comprising a domed housing and a base cooperating therewith, the material of the domed housing and base being substantially transparent to radiation, said radiant heating means being positioned over outer surfaces of the domed housing and base surrounding the inner deposition chamber for providing precisely controlled temperatures in the reaction chamber, the radiant heating means and the outer surface of the domed housing and base being in a non-conducting relationship, wherein the resistance heating element means comprise a plurality of resistance heating elements, each resistance heating element having substantially the same cross-sectional area and length.Cited by (0)
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