Semiconductor device including Darlington connections

Abstract

A semiconductor device includes a plurality of transistors formed on a common substrate and connected in a Darlington configuration. A conductor is connected between a metallization layer on the base region of a transistor of the last stage in the Darlington connections and a metallization layer on the emitter region on a transistor of the stage preceding the last stage in the Darlington connections.

What is claimed is: 
     
       1. A semiconductor device including a plurality of transistors connected in a Darlington configuration, comprising: a semiconductor substrate,   a common collector layer of a first conductivity type deposited on said semiconductor substrate,   a plurality of base regions of a second conductivity formed on said common collector layer, corresponding to said plurality of transistors, said plurality of base regions being independent from each other,   a plurality of emitter regions of the first conductivity type each formed on each of said plurality of base regions, so that said plurality of transistors are structured,   a metallization layer interconnecting base and emitter regions of different ones of said plurality of transistors such that said plurality of transistors are in a Darlington configuration, and   a conductor wire connected between a portion of the metallization layer formed on the base region of the transistor of the last stage and a portion of the metallization layer formed on the emitter region of the transistor of the stage preceding the last stage to electrically bypass resistance inherent in the metallization layer.   
     
     
       2. A semiconductor device in accordance with claim 1, wherein said wire has a resistance smaller than that of the base region of the transistor of the last stage.   
     
     
       3. A semiconductor device in accordance with claim 1, wherein said wire is made of aluminum. 
     
     
       4. A semiconductor device in accordance with claim 1, wherein said plurality of transistors comprise three transistors.