Ion implantation with variable implant angle

Abstract

A target holder for an ion implantation system is disclosed. The targets are supported on a disk which is mounted on a motor which spins the disk. The motor is in turn mounted on a shaft which makes a reciprocating scanning movement along its axis. The spinning of the disk and the reciprocation of the shaft provide uniform exposure of the targets to the incident ion beam. In addition, the shaft can be rotated about its axis to control the angle of incidence of the ion beam as it strikes the targets.

I claim: 
     
       1. Ion implantation apparatus in which the implant angle may be varied during implantation comprising, in combination, means for producing an ion beam, a wafer support comprising a spinning disk and adapted to support one or more wafers in the path of said ion beam in such a manner that the implant angle in one dimension is fixed during the implantation process, and   means for imparting a scanning movement to said spinning disk along a scan axis transverse to the axis of spin of said spinning disk, and   means for rotating said spinning disk about said scan axis so as to control and vary said implant angle in a dimension transverse to said one dimension.   
     
     
       2. Ion implantation apparatus in which the implant angle may be varied during implantation comprising, in combination, means for producing an ion beam,   a wafer support comprising a spinning disk and adapted to support one or more wafers in the path of said ion beam in such a manner that the implant angle in one dimension is fixed during the implantation process,   a rotatable shaft capable of movement along its axis,   a motor mounted on said shaft,   means for mounting said wafer support disk upon said motor so as to be spun thereby,   means for imparting a scanning movement to said shaft along its axis, and   means for rotating said shaft so as to control and vary said implant angle in a dimension transverse to said one dimension.