Method of doping and implanting using arsine, antimony, and phosphine substitutes

Abstract

The present invention addresses the use of at least partially fluorinated organometallic compounds in reactive deposition applications. More specifically, the present invention addresses the use of the fluoroorganometallic compounds M(CF3)3, or any M(CnF(2n+1))3-yHy compound where (y</=2), M(CH2CF3)3 or any fluoroalkyl organometallics of the general formula M(CnH[(2n+1)-x]Fx)3-yHy, where y</=2; x has a value 1</=x</=2n+1; and M=As, P, or Sb, in processes requiring deposition of the corresponding element. These uses include a number of different processes; the organometallic vapor phase epitaxy of compound semiconductor materials such as GaAs, InP, AlGaAs, InSb, etc. doping of SiO2 or borosilicate based glasses to enhance the reflow properties of the glass; in-situ n-type doping of silicon epitaxial material; sourcing of arsenic or phosphorus for ion implantation; chemical beam epitaxy and diffusion doping into electronic materials such as silicon dioxide, silicon and polycrystalline silicon. These types of materials generally have high volatilities, low toxicities, labile metal-ligand bonds, and stable decomposition products. Specifically, the use of tris-trifluoromethyl arsenic (AS(CF3) 3) as a substitute for arsine in the manufacture of silicon integrated circuits, Group III-V compound semiconductors, optoelectronics and other electronic devices has been identified.

We claim: 
     
       1. In a method of n-type doping of silicon epitaxial or polycrystalline material with a Group VA metal using an organometallic dopant source containing arsenic, phosphorus or antimony, the improvement wherein said organometallic dopant is selected from the group consisting of compounds of the formula:   MR.sub.1 R.sub.2 R.sub.3     wherein M=As, P or Sb and R 1 , R 2  and R 3  are each separately hydrogen or an organic radical wherein at least one R is an organic radical which is at least partially fluorinated.   
     
     
       2. The method of claim 1 wherein said organic radicals are selected from the group consisting of alkyl, cycloalkyl, aryl, alkenyl or arenyl. 
     
     
       3. The method of claim 1 wherein said organometallic dopant source is selected from the group consisting of compounds having the formula:   M(C.sub.n H.sub.[(2n+1)-x] F.sub.x).sub.3-y H.sub.y     wherein     M=As, P or Sb;       n=1-5;       x has a value; 1≦×≦2n+1; and       y≦2.     
     
     
       4. The method of claim 1 wherein said organometallic dopant source is selected from the group consisting of compounds having the formula:   M(C.sub.n F.sub.(2n+1)).sub.3-y H.sub.y     wherein:     M=As, P or Sb;       n=1-5; and       y≦2.     
     
     
       5. The method of claim 1 wherein said organometallic dopant source is selected from the group consisting of compounds having the formula:   M(C.sub.n F.sub.(2n+1)).sub.3     wherein     M=As, P or Sb and       n=1-5.     
     
     
       6. The method of claim 1 wherein said organometallic dopant source is tris-trifluoromethyl arsenic. 
     
     
       7. The method of claim 1 wherein said organometallic dopant source is tris-trifluoromethyl phosphorus. 
     
     
       8. The method of claim 1 wherein said organometallic dopant source is tris-trifluoromethyl antimony. 
     
     
       9. In a method of ion implantation of a Group VA metal in a semiconductor substrate using an organometallic ion source containing arsenic, phosphorus or antimony, the improvement wherein said organometallic ion source is selected from the group consisting of compounds of the formula:   MR.sub.1 R.sub.2 R.sub.3     wherein M=As, P or Sb and R 1 , R 2  and R 3  are each separately hydrogen or an organic radical wherein at least one R is an organic radical which is at least partially fluorinated.   
     
     
       10. The method of claim 9 wherein said organic radicals are selected from the group consisting of alkyl, cycloalkyl, aryl, alkenyl or arenyl. 
     
     
       11. The method of claim 9 wherein said organometallic ion source is selected from the group consisting of compounds having the formula:   M(C.sub.n H.sub.[(2n+1)-x] F.sub.x).sub.3-y H.sub.y     wherein     M=As, P or Sb;       n=1-5;       x has a value; 1≦×≦2n+1; and       y≦2.     
     
     
       12. The method of claim 9 wherein said organometallic ion source is selected from the group consisting of compounds having the formula:   M(C.sub.n F.sub.(2n+1)).sub.3-y H.sub.y     wherein:     M=As, P or Sb;       n=1-5; and       y≦2.     
     
     
       13. The method of claim 9 wherein said organometallic ion source is selected from the group consisting of compounds having the formula:   M(C.sub.n F.sub.(2n+1)).sub.3     wherein     M=As, P or Sb and       n=1-5.     
     
     
       14. The method of claim 9 wherein said organometallic ion source is tris-trifluoromethyl arsenic. 
     
     
       15. The method of claim 9 wherein said organometallic ion source is tris-trifluoromethyl phosphorus. 
     
     
       16. The method of claim 9 wherein said organometallic ion source is tris-trifluoromethyl antimony.