US5087963AExpiredUtility

Glass-sealed semiconductor device

27
Assignee: NEC CORPPriority: Oct 16, 1989Filed: Oct 12, 1990Granted: Feb 11, 1992
Est. expiryOct 16, 2009(expired)· nominal 20-yr term from priority
H10W 90/756H10W 72/5449H10W 76/60
27
PatentIndex Score
5
Cited by
2
References
5
Claims

Abstract

In a glass-sealed semiconductor device, low-melting glass is glazed on a ceramic base to fix a lead frame. A distal end portion of the lead frame, the distal end portion being connected to a semiconductor element, is fixed to the ceramic base through devitrifying glass layer.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A glass-sealed semiconductor device in which low-melting glass is glazed on a ceramic base to fix a lead frame, and a distal end portion of said lead frame, said distal end portion being connected to a semiconductor element and being fixed to said ceramic base through devitrifying glass layer adjacent said low-melting glass. 
     
     
       2. A device according to claim 1, wherein there are further provided low-melting glass between said devitrifying glass and said ceramic base. 
     
     
       3. A device according to claim 2, wherein said devitrifying glass and said low-melting glass are glazed in a periphery portion of a recess of said ceramic base, and said low-melting glass is extended to a region outside the peripheral portion. 
     
     
       4. A device according to claim 1, wherein said devitrifying glass is glazed in a periphery portion of a recess of said ceramic base, and said low-melting glass is glazed in a region outside the peripheral portion. 
     
     
       5. A device according to claim 1, wherein there are further provided a frame electrode on the distal end portion which is connected to a part of semiconductor element via wiring.

Cited by (0)

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References (0)

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