Hybrid integrated circuit device

Abstract

Disclosed is a hybrid integrated circuit device provided with an active filter. The active filter is constructed mainly from a rectifier circuit, a reactor with one terminal connected with an output terminal of the rectifier, a switching element connected with one terminal of the reactor and a smoothing condenser connected with the other terminal of the reactor. The active filter is mounted on an insulating metal substrate and has, other than the above feature, a specific circuit structure wherein the substrate is divided by a ground pattern or power supply pattern into two blocks. One block is for a large current circuit such as the rectifier circuit, the switching element, and a diode and another block for a small signal circuit such as a control circuit. The hybrid integrated circuit device is of remarkably compact size. Also, it is greatly superior in a noise performance because switching noise does not flow into the chassis of electronic equipment from the metal substrate and the control circuit is shielded from the noise produced by the large current circuit, and also because the noise caused by wiring inductance can be limited.

What is claimed is: 
     
       1. A hybrid integrated circuit device comprising at least a rectifier circuit; a plurality of switching elements; and a plurality of diodes each having a terminal connected to a respective one of the switching elements, other terminals being connected in common, to constitute an active filter mounted on a circuit pattern formed on an insulating metal substrate, wherein a plurality of reactors is connected between a d.c. output terminal of the rectifier circuit and the switching elements respectively, a smoothing condenser is connected with the common connection terminal of the diodes, and a ground pattern of the circuit pattern is connected with the metal substrate. 
     
     
       2. The hybrid integrated circuit device according to claim 1 wherein the insulating metal substrate comprises an aluminum substrate and an oxide film formed by anodic oxidation of the surface of said aluminum substrate. 
     
     
       3. The hybrid integrated circuit device according to claim 1 wherein each switching element is composed of a bipolar transistor, a MOS transistor, a SIT or an IGBT. 
     
     
       4. A hybrid integrated circuit device comprising: a metal substrate having a surface and provided with an insulating layer on the surface; a first metallization pattern formed on the insulating layer; a rectifier circuit, a switching element and a diode all formed on said first metallization pattern, said rectifier circuit having a d.c. output terminal, said switching element defining a controllable current flow path and said diode having an input side and an output side, with said input side being connected to said current flow path of said switching element; an inductor connected between said d.c. output terminal of said rectifier circuit and said current flow path of said switching element; a smoothing capacitor connected to the output side of said diode; a control circuit disposed on said insulating layer; wherein said rectifier circuit, said switching element, said diode, said inductor, said smoothing capacitor and said control circuit constitute an active filter, said rectifier, said switching element and said diode constitute portions of a large current circuit and said control circuit constitutes a portion of a small signal circuit; and wherein said device further comprises a second metallization pattern formed on said insulating layer at a location between said portions of the large current circuit and said control circuit, and means for placing said second metallization pattern at a selected electric potential. 
     
     
       5. A hybrid integrated circuit device comprising: a metal substrate having a surface and provided with an insulating layer on the surface; a first metallization pattern formed on the insulating layer; a rectifier circuit, a switching element and a diode all formed on said first metallization pattern, said rectifier circuit having a d.c. output terminal, said switching element defining a controllable current flow path and said diode having an input side and an output side, with said input side being connected to said current flow path of said switching element; an inductor connected between said d.c. output terminal of said rectifier circuit and said current flow path of said switching element; a smoothing capacitor connected to the output side of said diode; a control circuit disposed on said insulating layer; wherein said rectifier circuit, said switching element, said diode, said inductor, said smoothing capacitor and said control circuit constitute an active filter, said rectifier, said switching element and said diode constitute portions of a large current circuit and said control circuit constitutes a portion of a small signal circuit; and wherein said device further comprises a ground pattern formed on said insulating layer and conductively connected to said metal substrate. 
     
     
       6. The hybrid integrated circuit device according to claim 2, 4 or 5, wherein the rectifier circuit is constructed from a bridge rectifier circuit. 
     
     
       7. The hybrid integrated circuit device according to claim 4 or 5, wherein the switching element is constructed from a bipolar transistor, a MOS transistor, a SIT, or an IGBT. 
     
     
       8. The hybrid integrated circuit device according to claim 1 or 5, wherein the ground pattern and the metal substrate are connected by means of wire bonding. 
     
     
       9. The hybrid integrated circuit device according to claim 4 or 5 wherein said metal substrate is made of aluminum and said insulating layer comprises an oxide film formed by anodic oxidation of the surface of said metal substrate. 
     
     
       10. A hybrid integrated circuit device comprising: an insulating metal substrate;   a rectifier circuit mounted on the insulating metal substrate and having a d.c. output terminal;   a switching element mounted on the insulating metal substrate and defining a controllable current flow path;   a diode mounted on the insulating metal substrate and having an input side and an output side, with said input side being connected to said current flow path of said switching element;   an inductor connected between said d.c. output terminal of said rectifier circuit and said current flow path of said switching element;   a smoothing capacitor connected to the output side of said diode; and   a control circuit connected to said switching element for controlling the current flow path defined by said switching element.