Method for manufacturing semiconductor device

Abstract

A, method for forming semiconductor device, includes forming an insulating film on a body by chemical vapor deposition, at low temperature raising the temperature of, the body, and exposing the body to plasma gas.

What is claimed is: 
     
       1. A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film on a substrate by chemical vapor deposition, said insulating film containing H 2  O in its interior;   heating said insulating film; and   contacting said heated insulating film with a plasma consisting of at least one gas selected from the group consisting of inert gases and gaseous oxygen, to drive said H 2  O out of said film, thereby densifying said film throughout its entire thickness.   
     
     
       2. A method in accordance with claim 1 wherein said contacting is conducted with said film at a temperature of 350° C. to 450° C. 
     
     
       3. A method in accordance with claim 1 wherein said insulating film further contains SiOH groups and wherein said contacting with a plasma eliminates said SiOH groups from said insulating film. 
     
     
       4. A method in accordance with claim 1 wherein said contacting induces ultraviolet radiation at the surface and interior of said film. 
     
     
       5. A method in accordance with claim 1 wherein said insulating film is SiO 2 . 
     
     
       6. A method in accordance with claim 1 wherein said forming of an insulating film is by reaction of a silane and oxygen, in gaseous phase at 350° C. to 450° C., to deposit SiO 2  as said insulating film. 
     
     
       7. A method for manufacturing a semiconductor device according to claim 1, wherein the chemical vapor deposition for forming said insulating film is effected with a mixed gas of mono-silane (SiH 4 )/oxygen (O 2 ) at 350° C. to 450° C. 
     
     
       8. A method for manufacturing a semiconductor device according to claim 1, wherein the chemical vapor deposition for forming said insulating film is effected with a mixed gas of organic silane (TEOS)/ozone (O 3 ) at 350° C. to 450° C. 
     
     
       9. A method for manufacturing a semiconductor device according to claim 1, wherein the insulating film formed by said chemical vapor deposition is an insulating film doped with impurities. 
     
     
       10. A method for manufacturing a semiconductor device according to claim 9, wherein said insulating film doped with impurities is any one of a PSG film, a BSG film and a BPSG film. 
     
     
       11. A method for manufacturing a semiconductor device according to claim 1, wherein the recited steps are repeated at least one more time. 
     
     
       12. A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film on a substrate by chemical vapor deposition, said insulating film containing H 2  O in its interior;   heating said insulating film; and   contacting said heated insulating film with a plasma consisting of ammonia to drive said H 2  O out of said film, thereby densifying said film throughout its entire thickness.   
     
     
       13. A method in accordance with claim 12 wherein said contacting is conducted with said film at a temperature of 350° C. to 450° C. 
     
     
       14. A method in accordance with claim 12 wherein said insulating film further contains SiOH groups and wherein said contact with a plasma eliminates said SiOH groups from said insulating film. 
     
     
       15. A method in accordance with claim 12 wherein said contacting induces ultraviolet radiation at the surface and interior of said film. 
     
     
       16. A method in accordance with claim 12 wherein said insulating film is SiO 2 . 
     
     
       17. A method in accordance with claim 12 wherein said forming of an insulating film is by reaction of a silane and oxygen, in gaseous phase at 350° C. to 450° C., to deposit SiO 2  as said insulating film. 
     
     
       18. A method in accordance with claim 1 wherein said plasma is formed of a gas consisting of oxygen.