Method for materials deposition by ablation transfer processing

Abstract

A method in which a thin layer of semiconducting, insulating, or metallic material is transferred by ablation from a source substrate, coated uniformly with a thin layer of said material, to a target substrate, where said material is desired, with a pulsed, high intensity, patternable beam of energy. The use of a patternable beam allows area-selective ablation from the source substrate resulting in additive deposition of the material onto the target substrate which may require a very low percentage of the area to be covered. Since material is placed only where it is required, material waste can be minimized by reusing the source substrate for depositions on multiple target substrates. Due to the use of a pulsed, high intensity energy source the target substrate remains at low temperature during the process, and thus low-temperature, low cost transparent glass or plastic can be used as the target substrate. The method can be carried out atmospheric pressures and at room temperatures, thus eliminating vacuum systems normally required in materials deposition processes. This invention has particular application in the flat panel display industry, as well as minimizing materials waste and associated costs.

I claim: 
     
       1. A method for depositing material by ablation transfer on a surface comprising: providing a first substrate with a quantity of material to be deposited;   providing a second substrate with a surface on which the material is to be deposited;   positioning the surface in a substantially parallel relation to the material to be deposited; and   directing patterned pulsed energy through one of the substrates onto the material to be deposited causing ablation thereof and transfer to the surface on which it is to be deposited.   
     
     
       2. The method of claim 1, wherein providing the quantity of material to be deposited is carried out by depositing the material onto a backing surface of the first substrate. 
     
     
       3. The method of claim 2, additionally including providing an adhesion material between the backing surface of the first substrate and the material to be deposited. 
     
     
       4. The method of claim 3, additionally including providing an adhesion material on the surface of the second substrate prior to directing pulsed energy onto the material to be deposited. 
     
     
       5. The method of claim 1, additionally including passing the pulsed energy through the surface of the second substrate and onto the material to be deposited. 
     
     
       6. The method of claim 1, additionally including depositing the material to be deposited on a substrate composed of material selected from the group consisting of silicon, glass and plastic. 
     
     
       7. The method of claim 6, additionally including selecting the substrate from material incapable of withstanding sustained processing temperatures greater than about 0°-200° C. 
     
     
       8. The process of claim 7, additionally including providing a layer of adhesive material intermediate the substrate and the material to be deposited. 
     
     
       9. The process of claim 8, additionally including providing a layer of adhesive material on a surface of the substrate prior to depositing the material thereon. 
     
     
       10. The method of claim 1, additionally including forming the surface on which the material is to be deposited to include a substrate incapable of withstanding sustained processing temperatures greater than about 180°-200° C. 
     
     
       11. The method of claim 1, wherein the patterned pulsed energy is produced by a pulsed energy source selected from the group of excimer lasers, YAG laser, copper vapor lasers, dye lasers, and pulsed x-ray sources. 
     
     
       12. The method of claim 1, wherein the patterned pulsed energy is patterned and controlled by a means connected to the pulsed energy source for patterning and controlling the pulsed energy produced thereby. 
     
     
       13. The method of claim 1, wherein the method for depositing material on the surface of the second substrate is carried out at room temperature and atmospheric pressure. 
     
     
       14. The method of claim 1, wherein both deposition and patterning are carried out simultaneously. 
     
     
       15. The method of claim 1, additionally including forming at least one of the substrates from a low temperature material incapable of withstanding sustained processing temperatures greater than about 200° C. for a time period of not greater than about 10 5  nanoseconds. 
     
     
       16. The method of claim 1, additionally including providing means for patterning the pulsed energy, and wherein the material deposited on the surface of the second substrate is in a pattern substantially the same as the pattern of the material ablated from the first substrate. 
     
     
       17. A method for materials deposition by ablation transfer processing, comprising: providing a material to be deposited by depositing at least a layer of the material onto a surface of a substrate;   providing at least a substrate on which the materials to be deposited;   positioning a surface of at least the substrate on which the material is to be deposited at a selected distance from the material to be deposited; and   directing pulsed energy through a substrate and onto at least portions of the material to be deposited causing ablation and transfer thereof to the surface located at a selected distance therefrom.   
     
     
       18. The method of claim 17, additionally including forming an adhesion layer intermediate the substrate and the material to be deposited. 
     
     
       19. The method of claim 17, additionally including providing the surface of the substrate on which the material is to be deposited with an adhesive layer prior to directing pulsed energy onto the material to be deposited. 
     
     
       20. The method of claim 13, additionally including forming at least one of the substrates from material transparent to the pulsed energy. 
     
     
       21. The method of claim 13, additionally including patterning the pulsed energy directed onto the material to be deposited such that material ablated and transferred is of a substantially same pattern as a pattern directed onto the material to be deposited by the patterned pulsed energy. 
     
     
       22. The method of claim 17 additionally producing the pulsed energy from a pulsed energy source selected from the group consisting of YAG lasers, excimer lasers, copper vapor lasers, dye lasers, and pulsed x-ray sources. 
     
     
       23. The method of claim 17, additionally including forming at least one of the substrates from material incapable of withstanding sustained processing temperatures of greater than about 200° C.