Film carrier semiconductor device

Abstract

A film carrier semiconductor device 10 comprises a semiconductor bare chip 20 and a carrier film 30. Chip electrodes 21 are provided on the bare chip 20. Each chip electrode 21 is electrically connected to the carrier film 30. Bump electrodes 37 are formed and arranged as an array on the carrier film 30 on the side of the other surface 31b of the film 30. Interconnection layers 32 are provided on the carrier film 30 to connect some of the chip electrodes 21b to the bump electrodes 37a and 37b. The semiconductor device 10 also comprises a noise blocking layer 60 provided on the carrier film 30 outside the chip mounting region. The noise blocking layer 60 is electrically connected to at least one of the chip electrodes 21a.

What is claimed is: 
     
       1. A film carrier semiconductor device comprising: a semiconductor bare chip having chip electrodes on one surface thereof;   a resin sealing said semiconductor bare chip;   a carrier film including a mounting region on a top surface, said semiconductor bare chip being adhered to said carrier film in said mounting region, said carrier film being provided with interconnections in said mounting region on said top surface connected to said chip electrodes; and   a noise blocking layer provided on said top surface along the periphery thereof outside the chip mounting region so as to surround the interconnections, said resin sealing said noise blocking layer.   
     
     
       2. A film carrier semiconductor device as claimed in claim 1, wherein said noise blocking layer comprises one of a power supply layer and a ground layer. 
     
     
       3. A film carrier semiconductor device as claimed in claim 1, wherein said noise blocking layer is formed of a power supply layer and a ground layer. 
     
     
       4. A film carrier semiconductor device as claimed in claim 1, wherein at least a portion of said noise blocking layer is electrically connected to a chip electrode. 
     
     
       5. A film carrier semiconductor device comprising: a semiconductor chip;   a carrier film having first and second surfaces, the first surface facing to said semiconductor chip;   bump electrodes provided on said carrier film on the second surface, a first group of bump electrodes being located within a second surface region corresponding to a chip mounting region where said semiconductor chip is mounted and a second group of said bump electrodes being located outside the second surface region;   chip electrodes on said semiconductor chip and facing said carrier film, said chip electrodes each being located within the chip mounting region and electrically connected with said carrier film;   interconnections for connecting said chip electrodes and said bump electrodes of the first group; and   a noise blocking layer on said carrier film outside of the chip mounting region so as to surround the interconnections.   
     
     
       6. A film carrier semiconductor device as claimed in claim 5, wherein said noise blocking layer is made of a conductive material. 
     
     
       7. A film carrier semiconductor device as claimed in claim 6, wherein at least one of said chip electrodes is for use in supplying power to said device and said noise blocking layer serves as a power supply layer. 
     
     
       8. A film carrier semiconductor device as claimed in claim 5, wherein said noise blocking layer is electrically connected to at least one of said chip electrodes. 
     
     
       9. A film carrier semiconductor device as claimed in claim 6, wherein at least one of said chip electrodes is for use in grounding said device and said noise blocking layer serves as a ground layer. 
     
     
       10. A film carrier semiconductor device as claimed in claim 6, wherein said noise blocking layer is formed of two layers between which an insulation film is interposed. 
     
     
       11. A film carrier semiconductor device as claimed in claim 10, wherein one of the two layers is a power supply layer and the other is a ground layer, the power supply layer being electrically connected to said chip electrodes that are for use in supplying power to said device while the ground layer being electrically connected to said chip electrodes that are for grounding said device. 
     
     
       12. A film carrier semiconductor device as claimed in claim 5, wherein said semiconductor chip mounted on said carrier film is sealed with resin. 
     
     
       13. A film carrier semiconductor device as claimed in claim 5, wherein said semiconductor chip mounted on said carrier film and said noise blocking layer are sealed with resin. 
     
     
       14. A film carrier semiconductor device comprising: a semiconductor chip;   a carrier film having first and second surfaces, the first surface facing said semiconductor chip, said carrier film being larger in length and width than said semiconductor chip;   bump electrodes provided on said carrier film on the second surface, a first group of bump electrodes being located within a second surface region corresponding to a chip mounting region where said semiconductor chip is mounted and a second group of said bump electrodes being located outside the second surface region;   chip electrodes on said semiconductor chip and facing said carrier film, said chip electrodes each being located within the chip mounting region and electrically connected with said carrier film;   interconnections for connecting said chip electrodes and said bump electrodes of the first group; and   a noise blocking layer on said first surface and outside of the chip mounting region so as to surround the interconnections.   
     
     
       15. A film carrier semiconductor device as claimed in claim 14, wherein said noise blocking layer is made of a conductive material. 
     
     
       16. A film carrier semiconductor device as claimed in claim 15, wherein said noise blocking layer is electrically connected to at least one of said chip electrodes. 
     
     
       17. A film carrier semiconductor device as claimed in claim 15, wherein at least one of said chip electrodes is for use in supplying power to said device and said noise blocking layer serves as a power supply layer. 
     
     
       18. A film carrier semiconductor device as claimed in claim 15, wherein at least one of said chip electrodes is for use in grounding said device and said noise blocking layer serves as a ground layer. 
     
     
       19. A film carrier semiconductor device as claimed in claim 15, wherein said noise blocking layer is formed of two layers between which an insulation film is interposed. 
     
     
       20. A film carrier semiconductor device as claimed in claim 19, wherein one of the two layers is a power supply layer and the other is a ground layer, the power supply layer being electrically connected to said chip electrodes that are for use in supplying power to said device while the ground layer being electrically connected to said chip electrodes that are for grounding said device.