Lead frame for semiconductor package and lead frame plating method

Abstract

A lead frame plating method including the steps of (a) forming an intermediate layer on the upper surface of a metal substrate, (b) submerging the metal substrate into a plating solution, and (c) forming a passive layer to a thickness of 0.01 to 1.5 microinches on the upper surface of the intermediate layer by applying a modulated current to the plating solution and the metal substrate.

What is claimed is: 
     
       1. A lead frame comprising: a metal substrate;   an intermediate layer formed on at least one side surface of the metal substrate; and   a protection layer plated with at least one metal among palladium, palladium alloy, gold, gold alloy, silver, and silver alloy to a thickness of 0.01 to 1.5 microinches by applying a modulated current, formed on the upper surface of the intermediate layer.   
     
     
       2. The lead frame as claimed in claim 1, wherein the waveform of the modulated current is a square wave whose polarity is periodically inverted. 
     
     
       3. The lead frame as claimed in claim 2, wherein the waveform of the modulated current has a predetermined direct current component. 
     
     
       4. The lead frame as claimed in claim 1 wherein the modulated current has a frequency band of between 100 Hz and 50 KHz and a duty cycle of between 5% and 50%. 
     
     
       5. The lead frame as claimed in claim 1, wherein the intermediate layer is formed of nickel or nickel alloy. 
     
     
       6. A lead frame plating method comprising the steps of: (a) forming an intermediate layer on the upper surface of a metal substrate;   (b) performing at least one of submerging the metal substrate into a plating solution and spraying the plating solution to the metal substrate; and   (c) forming a passive layer to a thickness of 0.01 to 1.5 microinches on the upper surface of the intermediate layer by applying a modulated current to the plating solution and the metal substrate.   
     
     
       7. The lead frame plating method as claimed in claim 6, wherein the protection layer is formed of at least one metal selected from the group consisting of palladium, palladium alloy, gold, gold alloy, silver, and silver alloy. 
     
     
       8. The lead frame plating method as claimed in claim 7, wherein the intermediate layer is formed of nickel or nickel alloy. 
     
     
       9. The lead frame plating method as claimed in claim 6, wherein the waveform of the modulated current is a square wave whose polarity is periodically inverted. 
     
     
       10. The lead frame plating method as claimed in claim 6, wherein the modulated current has a frequency band of between 100 Hz and 50 KHz and a duty cycle of between 5% and 50%. 
     
     
       11. The lead frame plating method as claimed in claim 6, wherein the step (a) is comprised of applying a modulated current to the plating solution and the metal substrate, the modulated current having a square wave whose polarity is periodically inverted. 
     
     
       12. The lead frame plating method as claimed in claim 11, wherein the modulated current has a frequency band of between 50 Hz and 500 Hz and a duty cycle of between 35% and 85%. 
     
     
       13. The lead frame as claimed in claim 2, wherein the modulated current has a frequency band of between 100 Hz and 50 KHz and a duty cycle of between 5% and 50%. 
     
     
       14. The lead frame as claimed in claim 3, wherein the modulated current has a frequency band of between 100 Hz and 50 KHz and a duty cycle of between 5% and 50%. 
     
     
       15. The lead frame plating method as claimed in claim 7, wherein the modulated current has a frequency band of between 100 Hz and 50 KHz and a duty cycle of between 5% and 50%. 
     
     
       16. The lead frame plating method as claimed in claim 8, wherein the modulated current has a frequency band of between 100 Hz and 50 KHz and a duty cycle of between 5% and 50%. 
     
     
       17. The lead frame plating method as claimed in claim 9, wherein the modulated current has a frequency band of between 100 Hz and 50 KHz and a duty cycle of between 5% and 50%.