Multiple chamber vacuum processing system configuration for improving the stability of mark shielding process
Abstract
A new configuration of a basic concatenatable integrated modular multiple chamber vacuum processing system for wafer manufacturing vacuum processes is disclosed. The basic system includes at least one multiple ported transfer vacuum chamber, an R-θ transfer means contained within each chamber, a multiplicity of ports adaptable for appending a variety of vacuum process chambers as well as forming entrance/exit ports with at least one dual port pass through chamber attached to one entrance/exit port. Each pass through chamber contains a wafer alignment and/or orientation means for aligning or orienting the wafer as necessary in any of the appended process chambers. The configuration minimizes alignment or orientation errors due to inherent instability of the concatenated transfer means operations.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A method of processing a wafer made of semiconductor material requiring alignment within a concatenated integrated modular multiple chamber vacuum processing system having two wafer transfer means comprising the steps:
providing a first transfer chamber having a plurality of ports for attachment of a first plurality of vacuum chambers and having a first transfer means for transferring the wafer between any one of the first plurality of attached vacuum chambers, comprising a dual ported entrance chamber, a degas chamber, a cleaning chamber and a first dual ported pass through chamber;
providing a second transfer chamber having a plurality of ports for attachment of a second plurality of vacuum chambers and having a second transfer means for transferring the wafer between any one of the second plurality of attached vacuum chambers comprising at least one process chamber and the first dual ported pass through chamber;
providing an alignment means located within one of the second plurality of attached vacuum chambers; and sequentially
entering the wafer into the first transfer chamber via the dual ported entrance chamber;
transferring the wafer by action of the first transfer means into the degas chamber wherein the wafer is degassed;
transferring the wafer by action of the first transfer means into the cleaning chamber wherein the wafer is cleaned;
transferring the wafer by action of the first transfer means into the dual ported pass though chamber;
transferring the wafer by action of the second transfer means from the dual ported pass through chamber to the alignment means chamber, wherein the wafer in aligned to a reference for a subsequent process;
transferring the wafer by action of the second transfer means from the alignment means chamber to the process chamber, wherein the wafer is processed.
2. The method according to claim 1 wherein the alignment means is an orientor responsive to a certain feature on the wafer, for orienting the wafer with respect to a position in the process chamber.
3. A method of processing a wafer made of semiconductor material requiring alignment within a concatenated integrated modular multiple chamber vacuum processing system having two wafer transfer means comprising the steps:
providing a first transfer chamber having a plurality of ports for attachment of a first plurality of vacuum chambers and having a first transfer means for transferring the wafer between any one of the first plurality of attached vacuum chambers, comprising a dual ported entrance chamber, a degas chamber, a cleaning chamber and a first dual ported pass through chamber;
providing a second transfer chamber having a plurality of ports for attachment of a second plurality of vacuum chambers and having a second transfer means for transferring the wafer between any one of the second plurality of attached vacuum chambers comprising at least one process chamber and the first dual ported pass through chamber;
providing an alignment means located within the first dual ported pass though chamber; and sequentially
entering the wafer into the first transfer chamber via the dual ported entrance chamber;
transferring the wafer by action of the first transfer means into the degas chamber wherein the wafer is degassed;
transferring the wafer by action of the first transfer means into the cleaning chamber wherein the wafer is cleaned;
transferring the wafer by action of the first transfer means into the dual ported pass though chamber, wherein the wafer is aligned to a reference for a subsequent process;
transferring the wafer by action of the second transfer means from the dual ported pass through chamber tithe process chamber, wherein the wafer is processed.
4. The method according to claim 3 wherein the alignment means is an orientor responsive to a certain feature on the wafer, for orienting the wafer with respect to a position in the process chamber.Cited by (0)
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