P
US6340641B1ExpiredUtilityPatentIndex 90

Substrate flattening method and film-coated substrate made thereby

Assignee: CATALYSTS & CHEM IND COPriority: Nov 11, 1996Filed: Oct 31, 1997Granted: Jan 22, 2002
Est. expiryNov 11, 2016(expired)· nominal 20-yr term from priority
Inventors:MURAGUCHI RYONAKASHIMA AKIRATONAI ATSUSHIKIMATSU MICHIOMACHIDA KATSUYUKIKYURAGI HAKARUIMAI KAZUO
B05D 1/286G11B 5/8404H10W 20/092H10P 95/90H10P 14/416H10P 14/6342H10P 14/6903H10P 95/06
90
PatentIndex Score
47
Cited by
18
References
20
Claims

Abstract

The present invention provides a method of easily planarizing the uneven surface of a substrate having an uneven surface. This method comprises the steps of forming a coating film containing spherical fine particles on a surface of a smooth substrate; sticking the surface of the smooth substrate provided with the coating film containing spherical fine particles to the uneven surface of a substrate having an uneven surface; and transferring the coating film containing spherical fine particles to the uneven surface of the substrate so that the uneven surface is planarized.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
       1. A method of planarizing a surface of a substrate having an uneven surface, which comprises the steps of: 
       forming a coating film containing spherical fine particles on a surface of a smooth substrate;  
       sticking the surface of the smooth substrate provided with the coating film containing spherical fine particles to the uneven surface of the substrate having an uneven surface; and  
       transferring the coating film containing spherical fine particles from the surface of the smooth substrate to the uneven surface of the substrate having an uneven surface so that the uneven surface is planarized.  
     
     
       2. The method as claimed in  claim 1 , wherein the surface of the smooth substrate is first furnished with a layer of spherical fine particles, and followed by applying a coating liquid for film formation onto the layer of spherical fine particles to thereby form the coating film containing spherical fine particles. 
     
     
       3. The method as claimed in  claim 1 , wherein the surface of the smooth substrate is applied with a coating liquid for film formation which contains spherical fine particles to thereby form the coating film containing spherical fine particles. 
     
     
       4. The method as claimed in  claim 1 , wherein, at the time of transferring the coating film containing spherical fine particles to the uneven surface of the substrate having an uneven surface, or thereafter, 
       the coating film containing spherical fine particles is heated so that at least part of the coating film is melted to thereby planarize the surface of the coating film, and  
       subsequently, the temperature is further raised so that the coating film containing spherical fine particles is cured to thereby accomplish the planarization of the uneven surface of the substrate having an uneven surface.  
     
     
       5. The method as claimed in  claim 1 , wherein the spherical fine particles are fine particles of silica and the coating film is a coating film containing a silicon-based component. 
     
     
       6. The method as claimed in  claim 5 , wherein the coating film is formed from a coating liquid which contains a polysilazane having a repeating unit represented by the general formula [1]:                    
       wherein R 1 , R 2  and R 3  may be identical with each other or different from each other and represent a hydrogen atom, an alkoxy, aryl or alkyl having 1 to 8 carbon atoms, and n is an integer of 1 or greater.  
     
     
       7. A substrate with a coating film having its surface planarized by the method as claimed in  claim 1 . 
     
     
       8. A process for producing a semiconductor device, comprising the steps of forming a coating film containing fine particles of silica by applying a coating liquid containing a polysilazane having a repeating unit represented by the above general formula [1] on a surface of a smooth substrate; and transferring the coating film containing fine particles of silica to an uneven surface of a semiconductor substrate so that the semiconductor substrate surface is furnished with the coating film containing fine particles of silica. 
     
     
       9. The method as claimed in  claim 2 , wherein, at the time of transferring the coating film containing spherical fine particles to the uneven surface of the substrate having an uneven surface, or thereafter, 
       the coating film containing spherical fine particles is heated so that at least part of the coating film is melted to thereby planarize the surface of the coating film, and  
       subsequently, the temperature is further raised so that the coating film containing spherical fine particles is cured to thereby accomplish the planarization of the uneven surface of the substrate having an uneven surface.  
     
     
       10. The method as claimed in  claim 3 , wherein, at the time of transferring the coating film containing spherical fine particles to the uneven surface of the substrate having an uneven surface, or thereafter, 
       the coating film containing spherical fine particles is heated so that at least part of the coating film is melted to thereby planarize the surface of the coating film, and  
       subsequently, the temperature is further raised so that the coating film containing spherical fine particles is cured to thereby accomplish the planarization of the uneven surface of the substrate having an uneven surface.  
     
     
       11. The method as claimed in  claim 2 , wherein the spherical fine particles are fine particles of silica and the coating film is a coating film containing a silicon-based component. 
     
     
       12. The method as claimed in  claim 3 , wherein the spherical fine particles are fine particles of silica and the coating film is a coating film containing a silicon-based component. 
     
     
       13. The method as claimed in  claim 4 , wherein the spherical fine particles are fine particles of silica and the coating film is a coating film containing a silicon-based component. 
     
     
       14. The method as claimed in  claim 11 , wherein the coating film is formed from a coating liquid which contains a polysilazane having a repeating unit represented by the general formula [1]:                    
       wherein R 1 , R 2  and R 3  may be identical with each other or different from each other and represent a hydrogen atom, an alkoxy, aryl or alkyl having 1 to 8 carbon atoms, and n is an integer of 1 or greater.  
     
     
       15. The method as claimed in  claim 12 , wherein the coating film is formed from a coating liquid which contains a polysilazane having a repeating unit represented by the general formula [1]:                    
       wherein R 1 , R 2  and R 3  may be identical with each other or different from each other and represent a hydrogen atom, an alkoxy, aryl or alkyl having 1 to 8 carbon atoms, and n is an integer of 1 or greater.  
     
     
       16. The method as claimed in  claim 13 , wherein the coating film is formed from a coating liquid which contains a polysilazane having a repeating unit represented by the general formula [1]:                    
       wherein R 1 , R 2  and R 3  may be identical with each other or different from each other and represent a hydrogen atom, an alkoxy, aryl or alkyl having 1 to 8 carbon atoms, and n is an integer of 1 or greater.  
     
     
       17. A substrate with a coating film having its surface planarized by the method as claimed in  claim 4 . 
     
     
       18. A substrate with a coating film having its surface planarized by the method as claimed in  claim 5 . 
     
     
       19. A substrate with a coating film having its surface planarized by the method as claimed in  claim 6 . 
     
     
       20. A substrate with a coating film having its surface planarized by the method as claimed in  claim 14 .

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