US6362487B1ExpiredUtility

Method and device for nondestructive detection of crystal defects

44
Assignee: WACKER SILTRONIC HALBLEITERMATPriority: Jun 18, 1998Filed: May 25, 1999Granted: Mar 26, 2002
Est. expiryJun 18, 2018(expired)· nominal 20-yr term from priority
H10P 74/203G01N 21/9501G01N 21/6489C30B 33/00G01N 21/17
44
PatentIndex Score
12
Cited by
12
References
7
Claims

Abstract

The nondestructive detection and characterization of crystal defects in monocrystalline semiconductor material is by a combination of photoluminescence heterodyne spectroscopy, photothermal heterodyne spectroscopy and SIRD.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
       1. A method for detecting and characterizing crystal defects in monocrystalline semiconductor material comprising 
       providing monocrystalline semiconductor material to be examined; and  
       examining said material by utilizing a combination of at least two means selected from the group consisting of photoluminescence heterodyne spectroscopy, photothermal heterodyne spectroscopy and SIRD measurement methods.  
     
     
       2. The method as claimed in  claim 1 , wherein the characterizing of crystal defects is carried out using measurement results which are obtained from the combination of measurement methods. 
     
     
       3. The method as claimed in  claim 1 , further comprising 
       using an optical reflected-light microscope, whereby dislocations are characterized and detected by decoration with Cristobalite.  
     
     
       4. The method as claimed in  claim 1 , comprising 
       examining said semiconductor material after each individual processing step in a fabrication line for producing silicon single crystals and silicon wafers.  
     
     
       5. The method as claimed in  claim 1 , further comprising 
       providing computer-assisted analysis of measurements; and  
       comparing data obtained by said analysis with data in a defect database, such that said data can be further evaluated by said process computer.  
     
     
       6. A device for detecting and characterizing crystal defects in monocrystalline semiconductor material, comprising 
       a photoluminescence heterodyne spectrometer, a photothermal heterodyne spectrometer, an SIRD module and an optical measurement and detection device.  
     
     
       7. The device as claimed in  claim 6 , further comprising 
       a holding and transport device; and  
       a process computer.

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