US6447983B1ExpiredUtility

Smart photolithography

32
Assignee: SAMSUNG SDI CO LTDPriority: Sep 18, 1997Filed: May 4, 1998Granted: Sep 10, 2002
Est. expirySep 18, 2017(expired)· nominal 20-yr term from priority
G03F 7/16G03F 7/2018H01J 9/227
32
PatentIndex Score
3
Cited by
4
References
6
Claims

Abstract

A photolithography method includes applying to a substrate a coating of a film forming composition containing a bonding resin and a film forming material and drying to form a film; selectively coating the film with a photosensitive composition including a photosensitizer to form a film pattern; exposing the film with the film pattern; and developing the film. Therefore, a film in a pattern and having excellent characteristics can be manufactured easily and efficiently. The photolithography method can be applied to any product which requires the formation of a film in a pattern.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
       1. A maskless photolithography method comprising: 
       forming a film by applying a coating of a film-forming composition, the film-forming composition including a bonding resin and a film-forming material, onto a substrate, and drying the coating to form a film;  
       selectively applying a coating of a photosensitive composition, comprising a photosensitizer, to only a portion of the film to form a film pattern;  
       exposing the film on which the film pattern is disposed; and  
       developing the film.  
     
     
       2. The maskless photolithography method according to  claim 1 , including spraying the photosensitive composition through a nozzle onto the film to form the film pattern. 
     
     
       3. The maskless photolithography method according to  claim 1 , including exposing the film with the film pattern to light without a photomask. 
     
     
       4. The maskless photolithography method according to  claim 1 , including exposing the film, on which the film pattern is disposed, by irradiating at least one of the surfaces of the substrate with light. 
     
     
       5. The maskless photolithography method according to  claim 1 , including exposing the film, on which the film pattern is disposed, by irradiating the substrate with light from more than one direction. 
     
     
       6. The maskless photolithography method according to  claim 1 , including exposing the film, on which the film pattern is disposed, by irradiating two opposite surfaces of the substrate with light.

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