High-temperature high-pressure processing method for semiconductor wafers, and an anti-oxidizing body used for the method

Abstract

A high-temperature high-pressure processing method for semiconductor wafers in which semiconductor wafers are charged into a pressure vessel to carry out processing under the gas atmosphere of high-temperature high-pressure, wherein the high-temperature high-pressure processing is carried out in the state that an anti-oxidizing body (an oxygen getter member) formed of a material having properties in which oxygen is apt to diffuse into interior is arranged within the pressure vessel whereby the anti-oxidizing body takes oxygen into the pressure vessel, thus preventing oxygen within the pressure vessel from being reduced to oxidize the surfaces of the semiconductor wafers in the high-temperature high-pressure processing.

We claim:  
     
       1. A high-temperature high-pressure processing method for semiconductor wafers in which semiconductor wafers are charged into a pressure vessel and processing is carried out under the gas atmosphere of high-temperature high-pressure, the method comprising the following steps: 
       arranging an anti-oxidizing body formed of a material having properties in which oxygen is apt to diffuse into interior into said pressure vessel; and  
       carrying out high-temperature high-pressure processing.  
     
     
       2. The high-temperature high-pressure processing method for semiconductor wafers according to  claim 1 , wherein high-temperature high-pressure processing is carried out in the state that the semiconductor wafers and the plate-like anti-oxidizing body formed substantially in the same shape as said semiconductor wafers as viewed in plane are mixed in a wafer support capable of supporting a plurality of semiconductor wafers. 
     
     
       3. The high-temperature high-pressure processing method for semiconductor wafers according to  claim 1 , wherein said semiconductor wafers are film-formed in Cu. 
     
     
       4. The high-temperature high-pressure processing method for semiconductor wafers according to  claim 2 , wherein said semiconductor wafers are film-formed in Cu. 
     
     
       5. An anti-oxidizing body used for a high-temperature high-pressure processing method for semiconductor wafers, characterized in that a material having properties in which oxygen is apt to diffuse into interior is formed into a plate substantially in the same shape as the semiconductor wafers as viewed in plane. 
     
     
       6. The anti-oxidizing body according to  claim 5 , wherein mirror polishing processing is applied to said body. 
     
     
       7. The anti-oxidizing body according to  claim 5 , wherein coating is applied to the whole or a part of one surface out of both surfaces of the plate. 
     
     
       8. The anti-oxidizing body according to  claim 6 , wherein coating is applied to the whole or a part of one surface out of both surfaces of the plate. 
     
     
       9. The anti-oxidizing body according to  claim 5 , wherein said body is formed of titanium or a titanium alloy or zirconium or a zirconium alloy. 
     
     
       10. The anti-oxidizing body according to  claim 6 , wherein said body is formed of titanium or a titanium alloy or zirconium or a zirconium alloy. 
     
     
       11. The anti-oxidizing body according to  claim 7 , wherein said body is formed of titanium or a titanium alloy or zirconium or a zirconium alloy. 
     
     
       12. The anti-oxidizing body according to  claim 8 , wherein said body is formed of titanium or a titanium alloy or zirconium or a zirconium alloy.