Semiconductor wafer manufacturing method

Abstract

An edge-rounded portion mirror finishing process, which results in low deformation on a wafer, which has undergone a slicing process including a grinding process in which double-sided grinding is performed on the. sliced wafer; a finishing grinding process in which high-precision and low-deformation finish grinding is performed on the wafer; an edge rounding process in which low-deformation grinding is performed on an edge-rounded portion of the wafer; a two-sided primary polishing process in which primary polishing is performed on both sides of the edge-rounded wafer; a one-sided finish polishing process in which finish polishing is performed on one side of the wafer that has been primary polished on both sides; and a process in which finish polishing is performed on the edge-rounded portion of the above-mentioned wafer.

What is claimed is:  
     
       1. A semiconductor wafer manufacturing method, in which a wafer is sliced from a single crystal ingot and a predetermined surface is finished to a mirror finish, comprising: 
       a grinding process which grinds simultaneously both sides of the wafer;  
       an edge-rounding process which grinds a rounded edge portion of the wafer with low deformation;  
       a two-sided primary polishing process which performs primary polishing of said both sides of the wafer;  
       a rounded edge portion polishing process which performs finishing polishing of the rounded edge portion of the wafer, and  
       a one-sided finish polishing process which performs finish polishing on one side of the wafer.  
     
     
       2. The semiconductor wafer manufacturing method according to  claim 1 , further comprising a finish grinding process, which performs finish grinding with high precision and low deformation on ether one side or two sides of the wafer, between the grinding process and the two-sided primary polishing process. 
     
     
       3. The semiconductor wafer manufacturing method according to  claim 1 , wherein the edge rounding process follows the two-sided primary polishing process. 
     
     
       4. The semiconductor wafer manufacturing method according to  claim 2 , wherein following said finish grinding of the rounded edge portion and one side of the wafer, a deformed layer of the entire surface of the wafer is 2˜3 μm. 
     
     
       5. The semiconductor wafer manufacturing method according to  claim 1 , wherein thickness of the wafer is provided within a predetermined range.