Thin film spin probe

Abstract

The thin film spin probe is particularly suited for measurement of spin-polarized components which are parallel with or vertical to the surface of a specimen to be measured. A thin film 2 supporting another thin film of the active probing region is formed on substrate 1. The thin film 3 of the active probing region is formed on said thin film 2. A specified section of said substrate is then removed by selective etching.

What is claimed is:  
     
       1. A thin film spin probe comprising: 
       a board, a first thin film formed on said board to support another thin film of the active probing region, and  
       said another thin film of the active probing region formed above said first thin film,  
       wherein a specified section of said board is removed by selective etching,  
       wherein said board is made of GaAs, said first thin film to support said another thin film of the active probing region made of AlGaAs, and said another thin film of the active probing region made of GaAs.  
     
     
       2. A thin film spin probe which comprises: 
       a board,  
       a transparent support film formed on said board,  
       a thin film comprising a light emitting region formed above said support film, and  
       a thin barrier layer formed above said thin film,  
       wherein a specified section of said board is removed by selective etching.  
     
     
       3. The thin film spin probe as claimed in  claim 2  characterized in that said substrate is made of GaAs, said transparent support film is made of AlGaAs, said thin film comprising a light emitting region is made of GaAs, and said thin barrier layer is made of AlAs. 
     
     
       4. Any thin film spin probe as claimed in claims  1 ,  2  and  3  wherein said thin film formed on said board is formed by a thin film forming unit. 
     
     
       5. A thin film spin probe comprising: 
       a first thin-layer formed on a substrate, which is an active probe area, comprising AlGaAs is formed using a thin film forming device, and  
       a second thin-layer that is an active probe area comprising GaAs having the sealing function of an optical excitation carrier is formed using said thin film forming device,  
       wherein a portion of said substrate is removed.  
     
     
       6. A thin film spin probe comprising: 
       a transparent supporting film comprised of AlGaAs is formed on a substrate using a thin-layer forming device,  
       a thin layer comprised of GaAs that structures an illuminating area is formed on said transparent supporting film,  
       a barrier wall comprised of AlAs is formed on top of said thin layer, and  
       wherein a portion of said substrate is removed.