Scanning exposure apparatus and method with run-up distance control

Abstract

A method is provided for transferring a mask pattern on a mask onto each of a plurality of shot areas on a substrate by synchronously moving the mask and the substrate with respect to an exposing radiation flux. The method includes the steps of optimizing run-up distances of the mask and the substrate with respect to each of the plurality of shot areas, determining respective acceleration starting positions for the mask and the substrate for the shot area to be exposed in accordance with the corresponding run-up distances optimized in the step of optimizing, and accelerating the mask and the substrate from the respective acceleration starting positions to respective scanning speeds. The method further includes the steps of maintaining the respective scanning speeds of the mask and the substrate to synchronously move the mask and the photosensitive substrate, and directing the exposing radiation flux towards the mask to project the image of the mask pattern onto the shot area when the mask and the substrate complete respective run-up distances in the step of maintaining.

What is claimed is:  
     
       1. An exposure method for exposing a plurality of shot areas formed on a substrate by scanning the shot areas with respect to an exposure light, the method comprising the steps of: 
       obtaining run-up distance information corresponding to each of the plurality of shot areas respectively based on a position of the respective shot areas in the substrate, or based on a scanning direction of the substrate when the respective shot areas will be exposed, wherein the run-up distance information is memorized with respect to each of the plurality of shot areas in advance; and  
       exposing the respective shot areas with run-up distances in accordance with the run-up distance information for each of the plurality of shot areas.  
     
     
       2. The method according to  claim 1 , wherein 
       the position of the respective shot areas in the substrate includes a position of a substrate stage in a predetermined plane, wherein the substrate stage holds the substrate and is movable in the predetermined plane.  
     
     
       3. The method according to  claim 1 , wherein 
       the run-up distance information includes a run-up start position of a substrate stage in a predetermined plane, wherein the substrate stage holds the substrate and is movable in the predetermined plane.  
     
     
       4. The method according to  claim 3 , further comprising: 
       accelerating the substrate stage immediately after reaching run-up start positions for each of the plurality of shot areas.  
     
     
       5. The method according to  claim 1 , wherein 
       the run-up distance information includes a coefficient to decide the run-up distance of each of the plurality of shot areas.  
     
     
       6. A method for manufacturing a semiconductor device comprising the steps of: 
       transferring a device pattern onto a substrate using the exposure method according to  claim 1 .  
     
     
       7. An exposure method for transferring a pattern on a mask onto a plurality of shot areas formed on a substrate by synchronically scanning the substrate and the mask, the method comprising the steps of: 
       obtaining run-up distance information for a next shot area that will be exposed next based on synchronization error information obtained from at least one shot area that is exposed before the next shot area; and  
       exposing the next shot area with a run-up distance in accordance with the run-up distance information.  
     
     
       8. The method according to  claim 7 , wherein 
       the synchronization error information includes a time from starting the run-up until when the synchronization error of the substrate and the mask settles within a predetermined tolerance.  
     
     
       9. The method according to  claim 7 , wherein 
       the run-up distance information includes a run-up start position of a substrate stage in a predetermined plane, wherein the substrate stage holds the substrate and is movable in the predetermined plane.  
     
     
       10. The method according to  claim 9 , further comprising: 
       accelerating the substrate stage immediately after reaching a run-up start position of the next shot area.  
     
     
       11. The method according to  claim 7 , wherein 
       a scanning direction of at least one shot area exposed previously has a same scanning direction of a next shot area when the next shot area will be exposed.  
     
     
       12. The method according to  claim 7 , wherein 
       at least one shot area exposed previously includes a first shot area formed on another substrate different from the substrate having the next shot area.  
     
     
       13. The method according to  claim 12 , wherein 
       a position of the first shot area in the other substrate has a same position of the next shot area in the substrate.  
     
     
       14. A method for manufacturing a semiconductor device comprising the steps of: 
       transferring a device pattern onto a substrate using the exposure method according to  claim 7 .