Ion implanting apparatus and sample processing apparatus

Abstract

Heat energy produced for heating is absorbed into a silicon wafer, and the thermal deformation of the silicon wafer is prevented. An ion implanting apparatus comprises an ion source for producing an ion beam; a process chamber for containing the silicon wafer; a rotating body disposed and rotated in the process chamber; a holding means for holding the silicon wafer of an object to be ion-implanted with a spacing between an ion implanted area of the object to be ion-implanted and the holding means, the holding means being connected to the rotating body; and a heating means for heating the silicon wafer in the process chamber, wherein the holding means holds the silicon wafer in a state in contact with a part of a region in an outer peripheral side of the silicon wafer, and blocks the silicon wafer to move toward an acting direction of a centrifugal force.

What is claimed is:  
     
       1. An ion implanting apparatus comprising: 
       an ion source for producing an ion beam;  
       a process chamber for containing a plurality of wafers to be ion-implanted;  
       a rotating body disposed and rotated in the process chamber;  
       a plurality of wafer holders fixed to the rotating body to support the wafers in an inclined state to a rotating plane of the rotating body; and  
       ion beam irradiation means for irradiating the ion beam from the ion source toward the wafers to be implanted in the process chamber, wherein  
       the wafer holders include a first supporting portion supporting the wafers to be ion-implanted, in a state in contact with a part of a region at a periphery of each wafer to be ion-implanted, and so as to block the wafers to be ion-implanted from moving toward an acting direction of centrifugal force due to rotation of the rotating body during ion irradiation of the wafers by the ion beam irradiation means; and  
       the wafer holders include a second supporting portion supporting an end of each wafer to be ion-implanted, so as to raise the wafers against the first supporting portion, the second supporting portion being supported by a spring attached to the wafer holders.