P
US6734839B2ExpiredUtilityPatentIndex 98

Active matrix display device

Assignee: SEIKO EPSON CORPPriority: Aug 29, 1997Filed: Jan 22, 2002Granted: May 11, 2004
Est. expiryAug 29, 2017(expired)· nominal 20-yr term from priority
Inventors:YUDASAKA ICHIO
H10K 59/878H10K 59/873H10D 86/481H10D 86/60H05B 33/04H05B 33/22H05B 33/26H05B 33/12H10K 50/865H10K 59/122H10K 50/844
98
PatentIndex Score
78
Cited by
25
References
25
Claims

Abstract

In an active matrix display device, each pixel is provided with a pixel electrode, an organic semiconductor film deposited on the upper layer side of the pixel electrode, and a thin film luminescent element provided with an opposing electrode formed on the upper layer side of the organic semiconductor film. A protective film covering almost the entire surface of a substrate is formed on the upper layer of the opposing electrode. The protective film prevents the entry of moisture or oxygen to inhibit the deterioration of the thin film luminescent element.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
       1. An active matrix substrate, comprising: 
       a substrate;  
       a data line;  
       a scanning line;  
       a pixel electrode formed corresponding to intersection between the data line and the scanning line, the pixel electrode being connected to a transistor through a relay electrode; and  
       a bank layer, the bank layer overlapping the relay electrode,  
       the relay electrode being connected to one of a source and drain of the transistor via a first contact hole formed in a first interlayer insulating film that covers the transistor, and the relay electrode being connected to the pixel electrode via a second contact hole formed in a second interlayer insulating film that is formed on the first interlayer insulating film,  
       the second contact hole not overlapping the transistor, and  
       the transistor being provided between the bank layer and the substrate.  
     
     
       2. The active matrix substrate according to  claim 1 , the relay electrode being formed at the same time as the data line. 
     
     
       3. The active matrix substrate according to  claim 1 , the relay electrode and the date line being formed on the first insulating film. 
     
     
       4. The active matrix substrate according to  claim 1 , the bank layer overlapping the second contact hole. 
     
     
       5. The active matrix substrate according to  claim 1 , a first position where the first contact hole and the relay electrode is connected deviating from a second position where the second contact hole and the relay electrode is connected. 
     
     
       6. The active matrix substrate according to  claim 1 , a flat area being formed in a region where the pixel electrode is formed. 
     
     
       7. The active matrix substrate according to  claim 1 , the bank layer being formed of a black resist. 
     
     
       8. The active matrix substrate according to  claim 1 , the bank layer being formed on the second interlayer insulating film, and the second interlayer insulating film not being flattened. 
     
     
       9. An active matrix substrate, comprising: 
       a substrate;  
       a data line;  
       a scanning line;  
       a pixel electrode formed corresponding to intersection between the data line and the scanning line, the pixel electrode being connected to a transistor through a relay electrode; and  
       a bank layer, the bank layer overlapping the relay electrode,  
       the relay electrode being connected to one of a source and drain of the transistor via a first contact hole formed in a first interlayer insulating film that covers the transistor, and the relay electrode being connected to the pixel electrode via a second contact hole formed in a second interlayer insulating film that is formed on the first interlayer insulating film,  
       the bank layer being formed on the second interlayer insulating film,  
       the second interlayer insulating film not being flattened, and  
       the transistor being provided between the bank layer and the substrate.  
     
     
       10. The active matrix substrate according to  claim 9 , a flat area being formed in a region where the pixel electrode is formed. 
     
     
       11. A display device, comprising: 
       a substrate;  
       a data line;  
       a scanning line;  
       a pixel electrode formed corresponding to intersection between the data line and the scanning line, the pixel electrode being connected to a transistor through a relay electrode;  
       a luminescent element including the pixel electrode, an opposing electrode, a luminescent thin film formed between the pixel electrode and the opposing electrode; and  
       a bank layer, the bank layer surrounding the luminescent thin film and overlapping the relay electrode,  
       the relay electrode being connected to one of a source and drain of the transistor via a first contact hole formed in a first interlayer insulating film that covers the transistor, and the relay electrode being connected to the pixel electrode via a second contact hole formed in a second interlayer insulating film that is formed on the first interlayer insulating film,  
       the second contact hole not overlapping the transistor, and  
       the transistor being provided between the bank layer and the substrate.  
     
     
       12. The display device according to  claim 11 , the relay electrode overlapping the second contact hole. 
     
     
       13. The display device according to  claim 11 , a first position where the first contact hole and the relay electrode is connected deviating from a second position where the second contact hole and the relay electrode is connected. 
     
     
       14. The active matrix substrate according to  claim 11 , the relay electrode being formed at the same time as the data line. 
     
     
       15. The active matrix substrate according to  claim 11 , the relay electrode and the data line being formed on the first insulating film. 
     
     
       16. The active matrix substrate according to  claim 11 , the bank layer overlapping the second contact hole. 
     
     
       17. The active matrix substrate according to  claim 11 , the luminescent thin film being formed in a flat area of a region where the pixel electrode is formed. 
     
     
       18. The active matrix substrate according to  claim 11 , the bank layer being formed of a black resist. 
     
     
       19. The active matrix substrate according to  claim 11 , the bank layer being formed on the second interlayer insulating film, and the second interlayer insulating film not being flattened. 
     
     
       20. A display device, comprising: 
       a substrate;  
       a data line;  
       a scanning line;  
       a pixel electrode formed corresponding to intersection between the data line and the scanning line, the pixel electrode being connected to a transistor through a relay electrode;  
       a luminescent element including the pixel electrode, an opposing electrode, a luminescent thin film formed between the pixel electrode and the opposing electrode;  
       a protective film disposed on the opposing electrode; and  
       a bank layer, the bank layer overlapping the relay electrode,  
       the relay electrode being connected to one of a source and drain of the transistor via a first contact hole formed in a first interlayer insulating film that covers the transistor, and the relay electrode being connected to the pixel electrode via a second contact hole formed in a second interlayer insulating film that is formed on the first interlayer insulating film,  
       a first position where the first contact hole and the relay electrode is connected deviating from a second position where the second contact hole and the relay electrode is connected,  
       the bank layer being formed on the second interlayer insulating film,  
       the second interlayer insulating film not being flattened, and  
       the transistor being provided between the bank layer and the substrate.  
     
     
       21. The display according to  claim 20 , the luminescent thin film being formed in a flat area of a region where the pixel electrode is formed. 
     
     
       22. A display device, comprising: 
       a substrate;  
       a data line;  
       a scanning line;  
       a pixel electrode formed corresponding to intersection between the data line and the scanning line, the pixel electrode being connected to a transistor through a relay electrode;  
       a luminescent element including the pixel electrode, an opposing electrode, a luminescent thin film formed between the pixel electrode and the opposing electrode;  
       a protective film disposed on the opposing electrode; and  
       a bank layer, the bank layer surrounding the luminescent thin film,  
       the relay electrode being connected to one of a source and drain of the transistor via a first contact hole formed in a first interlayer insulating film that covers the transistor, and the relay electrode being connected to the pixel electrode via a second contact hole formed in a second interlayer insulating film that is formed on the first interlayer insulating film,  
       a first position where the first contact hole and the relay electrode is connected deviating from a second position where the second contact hole and the relay electrode is connected,  
       the second contact hole not overlapping the transistor, and  
       the transistor being provided between the bank layer and the substrate.  
     
     
       23. An active matrix substrate, comprising: 
       a substrate;  
       a data line;  
       a scanning line;  
       a pixel electrode formed corresponding to intersection between the data line and the scanning line, the pixel electrode being connected to a transistor through a relay electrode; and  
       a bank layer, the bank layer surrounding the pixel electrode,  
       the relay electrode being connected to one of a source and drain of the transistor via a first contact hole formed in a first interlayer insulating film that covers the transistor, and the relay electrode being connected to the pixel electrode via a second contact hole formed in a second interlayer insulating film that is formed on the first interlayer insulating film,  
       the second contact hole not overlapping the transistor, and  
       the transistor being provided between the bank layer and the substrate.  
     
     
       24. A display device, comprising: 
       a substrate;  
       a data line;  
       a scanning line;  
       a pixel electrode formed corresponding to intersection between the data line and the scanning line, the pixel electrode being connected to a transistor through a relay electrode;  
       an organic semiconductor film formed between the pixel electrode and an opposing electrode opposite to the pixel electrode;  
       a protective film disposed on the opposing electrode; and  
       a bank layer, the bank layer overlapping the relay electrode,  
       the relay electrode being connected to one of a source and drain of the transistor via a first contact hole formed in a first interlayer insulating film that covers the transistor, and the relay electrode being connected to the pixel electrode via a second contact hole formed in a second interlayer insulating film that is formed on the first interlayer insulating film,  
       a first position where the first contact hole and the relay electrode is connected deviating from a second position where the second contact hole and the relay electrode is connected,  
       the second contact hole not overlapping the transistor, and  
       the transistor being provided between the bank layer and the substrate.  
     
     
       25. The display device according to  claim 24 , the organic semiconductor film being formed in a flat area of a region where the pixel electrode is formed.

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