System and method for adjusting the properties of a device by GCIB processing

Abstract

A system and method of precisely adjusting the properties of a device using a gas cluster ion beam (GCIB) are described. Use of the invention permits the precise removal or addition of small amounts of material without significantly damaging or degrading the performance of the device. The system is capable of adjusting the properties of a single device or multiple devices and the devices may be processed serially, in small groups, or all at once. The system is also capable of delivering a single dose or a variety of doses depending on the amount of material needed to be removed or added to adjust the properties.

What is claimed is:  
     
       1. A method of adjusting a property of a SAW device using a gas cluster ion beam comprising: 
       a. providing a substrate containing at least one SAW device;  
       b. opening a beam gate to allow the gas cluster ion beam to pass there through in the direction of the at least one SAW device;  
       c. exposing an area on the at least one SAW device to a dose of ions from the gas cluster ion beam; and  
       d. closing said beam gate when the dose is delivered.  
     
     
       2. The method of  claim 1  wherein the area comprises an entire SAW device. 
     
     
       3. The method of  claim 1  wherein the area encompasses a plurality of SAW devices. 
     
     
       4. The method of  claim 1  further comprising repeating steps b through d. 
     
     
       5. The method of  claim 4  wherein the dose varies during each exposing step. 
     
     
       6. The method of  claim 4  wherein the area varies during each exposing step. 
     
     
       7. The method of  claim 4  further comprising moving the substrate before repeating steps b through d. 
     
     
       8. The method of  claim 7  wherein the moving step is programmably operated. 
     
     
       9. The method of  claim 7  wherein the moving step is accomplished in a step-wise motion. 
     
     
       10. The method of  claim 4 , wherein the dose delivered during successive exposing steps is variable from step to step. 
     
     
       11. The method of  claim 4 , further comprising the step of adjusting the exposure areas between successive exposing steps. 
     
     
       12. The method of  claim 1  wherein the exposing step comprises utilizing a portion of the gas cluster ion beam. 
     
     
       13. The method of  claim 12  wherein the area comprises an entire SAW device. 
     
     
       14. The method of  claim 12  wherein the area encompasses a plurality of a SAW devices. 
     
     
       15. The method of  claim 12  further comprising repeating steps b through d. 
     
     
       16. The method of  claim 15  wherein the dose varies during each exposing step. 
     
     
       17. The method of  claim 15  wherein the area varies during each exposing step. 
     
     
       18. The method of  claim 15  further comprising moving the substrate before repeating steps b through d. 
     
     
       19. The method of  claim 18  wherein the moving step is programmably operated. 
     
     
       20. The method of  claim 18  wherein the moving step is accomplished in a step-wise motion. 
     
     
       21. The method of  claim 18  wherein the gas cluster ion beam is not scanned. 
     
     
       22. The method of  claim 15 , wherein the dose delivered during successive exposing steps is variable from step to step. 
     
     
       23. The method of  claim 15 , further comprising the step of adjusting the exposure areas between successive exposing steps. 
     
     
       24. The method of  claim 1  wherein the property is the characteristic frequency of the SAW device. 
     
     
       25. The method of  claim 1  wherein the property is adjusted by removing material from the at least one SAW device. 
     
     
       26. The method of  claim 1  wherein the property is adjusted by adding material to the at least one SAW device. 
     
     
       27. A gas cluster ion beam processing system comprising: 
       a source for producing a gas cluster ion beam;  
       a beam gate disposed in the path of said gas cluster ion beam, said beam gate having an open state and a closed state, wherein said open state allows said gas cluster ion beam to pass through said beam gate and irradiate a substrate and said closed state prohibits said gas cluster ion beam to pass through said beam gate;  
       a gate controller that operably controls said open state and said closed state in said beam gate; and  
       a beam defining means having an aperture disposed in the path of said gas cluster ion beam which defines an area on said substrate that is to be exposed to said gas cluster ion beam.  
     
     
       28. The processing system of  claim 27  further comprising a means for moving said substrate. 
     
     
       29. The processing system of  claim 28  wherein said moving means is programmably operated. 
     
     
       30. The processing system of  claim 28  wherein a portion of said moving means is utilized as a current collection device. 
     
     
       31. The processing system of  claim 28  wherein said moving means comprises a stage and a step controller. 
     
     
       32. The processing system of  claim 27  wherein said beam defining aperture is adjustable. 
     
     
       33. The processing system of  claim 27  further comprising means for selectably admitting a plurality of gases to said source. 
     
     
       34. The processing system of  claim 27  wherein the beam defining means further comprising a dosimetry aperture located adjacent to said aperture that permits transmission of a dosimetry sample into a current collection device. 
     
     
       35. The processing system of  claim 27  wherein said gate controller is programmably operated. 
     
     
       36. The processing system of  claim 35  wherein said programmable operation is based upon a dose of ions being delivered. 
     
     
       37. The processing system of  claim 36  wherein the dose delivered is adjustable. 
     
     
       38. The processing system of  claim 27  wherein said substrate contains at least one SAW device.