P
US6905945B1ExpiredUtilityPatentIndex 89

Microwave bonding of MEMS component

Assignee: CALIFORNIA INST OF TECHNPriority: Apr 22, 1999Filed: Apr 20, 2000Granted: Jun 14, 2005
Est. expiryApr 22, 2019(expired)· nominal 20-yr term from priority
Inventors:BARMATZ MARTIN BMAI JOHN DJACKSON HENRY WBUDRAA NASSER KPIKE WILLIAM T
B81C 3/001
89
PatentIndex Score
21
Cited by
8
References
10
Claims

Abstract

Bonding of MEMs materials is carried out using microwave. High microwave absorbing films are placed within a microwave cavity, and excited to cause selective heating in the skin of the material. This causes heating in one place more than another. Thereby minimizing the effects of the bonding microwave energy.

Claims

exact text as granted — not AI-modified
1. A method comprising:
 placing a first semiconductor substrate with a first metal part against a second semiconductor substrate with a second metal part;  
 aligning said first metal part with said second metal part; and  
 applying microwave energy to the first and second substrates to bond the first substrate to the second substrate.  
 
   
   
     2. A method as in  claim 1 , wherein the first substrate is placed on top of the second substrate, and is held only by gravity during bonding. 
   
   
     3. A method as in  claim 1 , wherein said bonding includes hermetically sealing a cavity. 
   
   
     4. A method as in  claim 3 , wherein one of said metal portions includes an indented part and said hermetically sealing comprises hermetically sealing completely said cavity, to form a hermetically sealed cavity inside the indented part. 
   
   
     5. A method as in  claim 2 , wherein said metal is gold. 
   
   
     6. A method as in  claim 5 , wherein said substrate are silicon. 
   
   
     7. A method as in  claim 1 , wherein said first part has an outer surface formed of a material with a low imaginary dielectric constant e″. 
   
   
     8. A method, comprising;
 providing a semiconductor substrate having a first portion first material with a first metallic portion;  
 providing a second material, having a second metallic portion; and  
 using microwave energy to bond the first metallic portion to the second metallic portion without heating the semiconductor portion significantly.  
 
   
   
     9. A method as in  claim 8 , wherein said first portion is held on the second portion by gravity only. 
   
   
     10. A method as in  claim 9 , wherein the first portion includes an indented portion therein, and said bonding comprises hermetically sealing around an outside of the indented portion.

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