Method for fabricating metal wiring

Abstract

A semiconductor device includes a semiconductor substrate and metal wiring formed by alternately depositing aluminum layers and copper layers on the semiconductor substrate so that a top layer of the metal wiring is an aluminum layer. The metal wiring is fabricated by alternately depositing an aluminum layer and a copper layer on a semiconductor substrate a predetermined number of times to form a metal wiring layer having an aluminum top layer. A photoresist film pattern is formed on the metal wiring layer and metal wiring is formed by performing an etching process on the metal wiring layer using the photoresist film pattern as a mask.

1. A method for fabricating metal wiring of a semiconductor device, comprising:
 forming a metal wiring layer by alternately depositing an aluminum layer and a copper layer on a semiconductor substrate a predetermined number of times, wherein a top layer is an aluminum layer; 
 forming a photoresist film pattern on the metal wiring layer; and 
 forming the metal wiring by performing an etching process on the metal wiring layer using the photoresist film pattern as a mask. 
 
   
   
     2. The method as defined in  claim 1 , wherein a bottom layer of the metal wiring layer is an aluminum layer. 
   
   
     3. The method as defined in  claim 1 , wherein at least one copper layer is formed at a thickness in the range of 3˜2000 Å. 
   
   
     4. The method as defined in  claim 1 , wherein at least one aluminum layer is formed at a thickness in the range of 3˜2000 Å. 
   
   
     5. The method as defined in  claim 1 , wherein the copper and aluminum layers are formed through a sputtering process or an atomic layer deposition (ALD) process.