Surface mounted package with die bottom spaced from support board

Abstract

A semiconductor package according to the present invention includes a metal can which receives in its interior space a MOSFET. The MOSFET so received is oriented such that its drain electrode is facing the bottom of the can and is electrically connected to the same by a layer of conductive epoxy or a solder or the like. The edges of the MOSFET so placed are spaced from the walls of the can. The space between the edges of the MOSFET and the walls of the can is filled with an insulating layer. A surface of the MOSFET is sub-flush below the plane of a substrate by 0.001-0.005 inches to reduce temperature cycling failures.

1. A semiconductor package comprising:
 a can including a connection surface for external connection, said connection surface terminating at a first plane; 
 a semiconductor die disposed in the interior of the can, said semiconductor die including one electrode electrically connected to an interior surface of said can and another opposing electrode terminating at a second plane; 
 wherein said first plane and said second plane are spaced to define a volume that is fillable by a conductive attachment material, and 
 wherein said first plane and said second plane are spaced 0.001 to 0.005 inches. 
 
   
   
     2. A semiconductor package according to  claim 1 , wherein said first plane represents the plane of a circuit board. 
   
   
     3. A semiconductor package according to  claim 1 , wherein said can is formed of a copper alloy. 
   
   
     4. A semiconductor package according to  claim 3 , wherein said can is silver plated. 
   
   
     5. A semiconductor package according to  claim 1 , wherein said conductive attachment material is either solder or an epoxy. 
   
   
     6. A semiconductor package according to  claim 1 , further comprising a space between the interior surface of said can and said die, an insulation body residing in said space. 
   
   
     7. A semiconductor package according to  claim 1 , wherein said semiconductor die is a power MOSFET. 
   
   
     8. A semiconductor package according to  claim 1 , wherein said semiconductor die is an IGBT. 
   
   
     9. A semiconductor package according to  claim 1 , wherein said semiconductor die is a diode. 
   
   
     10. A semiconductor package according to  claim 1 , wherein said can is cup-shaped and includes a peripheral rim portion surrounding said semiconductor die. 
   
   
     11. A semiconductor package according to  claim 1 , wherein said can includes at least two opposing rows of posts each connectable to conductive pads on a substrate. 
   
   
     12. A semiconductor package according to  claim 1 , wherein said can includes a rim at least a partial portion of which serves as a post. 
   
   
     13. A semiconductor package according to  claim 1 , wherein said semiconductor die is a power MOSFET having a drain electrode electrically connected to an interior surface of said can and a source electrode terminating at said second plane. 
   
   
     14. A semiconductor package comprising:
 a silver-plated copper alloy can including a connection surface for external connection, said connection surface terminating at a connection plane; 
 a semiconductor die disposed in the interior of said can, said semiconductor die including one electrode electrically connected to an interior surface of said can and another opposing electrode recessed from said connection plane; 
 wherein said connection plane and said opposing electrode are spaced to define a distance between said opposing electrode and a substrate when said connection surface is connected to said substrate. 
 
   
   
     15. A semiconductor package according to  claim 14 , wherein said space between said substrate and said opposing electrode is fillable with a conductive attachment material. 
   
   
     16. A semiconductor package according to  claim 15 , wherein said conductive attachment material is either solder or an epoxy. 
   
   
     17. A semiconductor package according to  claim 14 , wherein said opposing electrode and said substrate are spaced 0.001-0.005 inches. 
   
   
     18. A semiconductor package according to  claim 14 , further comprising a space between the interior surface of said can and said die, an insulation body residing in said space. 
   
   
     19. A semiconductor package according to  claim 14 , wherein said semiconductor die is a power MOSFET. 
   
   
     20. A semiconductor package according to  claim 14 , wherein said semiconductor die is an IGBT. 
   
   
     21. A semiconductor package according to  claim 14 , wherein said semiconductor die is a diode. 
   
   
     22. A semiconductor package according to  claim 14 , wherein said can is cup-shaped and includes a peripheral rim portion surrounding said semiconductor die. 
   
   
     23. A semiconductor package according to  claim 14 , wherein said can includes at least two opposing rows of posts each connectable to conductive pads on a substrate. 
   
   
     24. A semiconductor package according to  claim 14 , wherein said can includes a rim at least a partial portion of which serves as a post. 
   
   
     25. A semiconductor package according to  claim 14 , wherein said semiconductor die is a power MOSFET having a drain electrode electrically connected to an interior surface of said can and a source electrode terminating at said second plane.