P
US7288758B2ExpiredUtilityPatentIndex 99

Wafer-level optoelectronic device substrate

Assignee: ROHM & HAAS ELECT MATPriority: Nov 25, 1998Filed: Sep 9, 2005Granted: Oct 30, 2007
Est. expiryNov 25, 2018(expired)· nominal 20-yr term from priority
Inventors:SHERRER DAVID WHEIKS NOEL A
G02B 6/4246G02B 6/4214G02B 6/4292G02B 6/4274G02B 6/4231G02B 6/4249G02B 6/4257G02B 6/4232G02B 6/4201G02B 6/4204
99
PatentIndex Score
475
Cited by
21
References
19
Claims

Abstract

Provided are optoelectronic components which include an optoelectronic device and a structure for self-aligning the optoelectronic device. Also provided are optoelectronic modules and methods of forming optoelectronic components.

Claims

exact text as granted — not AI-modified
1. A wafer-level optoelectronic device substrate, comprising:
 a substrate having a plurality of substrate portions, wherein each of the substrate portions comprises an optoelectronic device flip-chip mounted thereon. 
 
     
     
       2. The wafer-level optoelectronic device substrate of  claim 1 , wherein the substrate is a silicon wafer. 
     
     
       3. The wafer-level optoelectronic device substrate of  claim 1 , further comprising an encapsulant over each of the optoelectronic devices. 
     
     
       4. The wafer-level optoelectronic device substrate of  claim 1 , wherein the optoelectronic device is a light emitting diode. 
     
     
       5. The wafer-level optoelectronic device substrate of  claim 1 , further comprising a driver in each of the substrate portions. 
     
     
       6. The wafer-level optoelectronic device substrate of  claim 1 , wherein each of the substrate portions comprises a plurality of optoelectronic devices mounted thereon. 
     
     
       7. A wafer-level optoelectronic device substrate, comprising:
 a substrate having a plurality of substrate portions, wherein each of the substrate portions comprises:
 an optoelectronic device mounted on the substrate; and 
 an electrical conductor extending from a front surface of the substrate to a back surface of the substrate in electrical communication with the optoelectronic device for passing signals to the optoelectronic device. 
 
 
     
     
       8. The wafer-level optoelectronic device substrate of  claim 7 , wherein the substrate is a silicon wafer. 
     
     
       9. The wafer-level optoelectronic device substrate of  claim 7 , further comprising an encapsulant over each of the optoelectronic devices. 
     
     
       10. The wafer-level optoelectronic device substrate of  claim 7 , wherein the optoelectronic device is a light emitting diode. 
     
     
       11. The wafer-level optoelectronic device substrate of  claim 7 , further comprising a driver in each substrate portion. 
     
     
       12. The wafer-level optoelectronic device substrate of  claim 7 , wherein each of the substrate portions comprises a plurality of optoelectronic devices mounted thereon. 
     
     
       13. A wafer-level optoelectronic device substrate, comprising:
 a substrate having a plurality of substrate portions, wherein each of the substrate portions comprises:
 a trench in a surface thereof; and 
 an optoelectronic device mounted on the substrate in the trench; and 
 an encapsulant over the optoelectronic device forming a surface thereover, wherein the optoelectronic device substrate has an optical path which passes through the encapsulant surface. 
 
 
     
     
       14. The wafer-level optoelectronic device substrate of  claim 13 , wherein the substrate is a silicon wafer. 
     
     
       15. The wafer-level optoelectronic device substrate of  claim 13 , wherein the optoelectronic device is a light emitting diode. 
     
     
       16. A wafer-level optoelectronic device substrate, comprising:
 a substrate having a plurality of substrate portions, wherein each of the substrate portions comprises an optoelectronic device mounted thereon and an encapsulant over the optoelectronic device, wherein the encapsulant forms a surface over the optoelectronic device and the optoelectronic device substrate has an optical path which passes through the encapsulant surface. 
 
     
     
       17. The wafer-level optoelectronic device substrate of  claim 16 , wherein the substrate is a silicon wafer. 
     
     
       18. The wafer-level optoelectronic device substrate of  claim 16 , further comprising a driver in each substrate portion. 
     
     
       19. The wafer-level optoelectronic device substrate of  claim 16 , wherein the optoelectronic device is a light emitting diode.

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