Composition for forming anti-reflective coating

Abstract

There is provided a composition for forming anti-reflective coating for use in a lithography process with irradiation light from F2 excimer laser (wavelength 157 nm) which has a high effect of inhibiting reflected light and causes no intermixing with resist layers, and an anti-reflective coating prepared from the composition, and a method of controlling attenuation coefficient of the anti-reflective coating. Concretely, the composition is one containing a polymer compound containing halogen atom for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device. The polymer compound is one which halogen atom is introduced to a main chain thereof and/or a side chain bonded to the main chain. The attenuation coefficient can be controlled by changing the content of halogen atom in the solid content of the composition.

1. A composition for forming anti-reflective coating, comprising: a solid content and a solvent, and a proportion of at least one halogen atom selected from the group consisting of bromine atom and iodine atom in the solid content is 10 mass % to 60 mass %, and the solid content contains a polymer compound selected from the group consisting of a bisphenol A derivative resin, a phenol novolak derivative resin, and a polyparavinylphenol derivative resin, the polymer compound having a repeating structural unit containing the at least one halogen atom. 
     
     
       2. The composition for forming anti-reflective coating according to  claim 1 , wherein the repeating structural unit further contains a crosslink-forming substituent. 
     
     
       3. The composition for forming anti-reflective coating according to  claim 1 , wherein the polymer compound further has a repeating structural unit containing a crosslink-forming substituent. 
     
     
       4. The composition for forming anti-reflective coating according to  claim 1 , wherein the polymer compound contains at least 20 mass % of the at least one halogen atom selected from the group consisting of bromine atom and iodine atom. 
     
     
       5. The composition for forming anti-reflective coating according to  claim 1 , wherein the polymer compound has a weight average molecular weight of 700 to 1,000,000. 
     
     
       6. A composition for forming anti-reflective coating characterized in that the composition comprises a solid content and a solvent, and a proportion of at least one halogen atom selected from the group consisting of bromine atom and iodine atom in the solid content is 10 mass % to 60 mass %, wherein the solid content contains a polymer compound having a repeating structural unit comprising the at least one halogen atom and a crosslink-forming substituent, wherein the repeating structural unit is represented by formula (1) 
       
         
           
           
               
               
           
         
       
       wherein L is a bonding group constituting a main chain of the polymer compound, M is a linking group containing at least one linking group selected from —C(═O)—, —CH 2 — or —O—, or a direct bond, X is bromine atom or iodine atom, t is a number of 1 or 2, u is a number of 2, 3 or 4, v is a number of the repeating structural units contained in the polymer compound and is a number of 1 to 3,000. 
     
     
       7. The composition for forming anti-reflective coating according to  claim 1 , wherein the solid content further contains a crosslinking agent having at least two crosslink-forming substituents. 
     
     
       8. An anti-reflective coating produced by coating the composition for forming anti-reflective coating according to  claim 1 , on a semiconductor substrate, and baking it, wherein the anti-reflective coating has an attenuation coefficient k to a light at a wavelength of 157 nm ranging from 0.20 to 0.50. 
     
     
       9. A method of forming an anti-reflective coating for use in a manufacture of a semiconductor device, comprising the steps of: coating the composition for forming anti-reflective coating according to  claim 1 , on a substrate, and baking it. 
     
     
       10. A method of forming an anti-reflective coating for use in a manufacture of a semiconductor device by use of a light of wavelength 157 nm, comprising the steps of: coating the composition for forming anti-reflective coating according to  claim 1 , on a substrate, and baking it. 
     
     
       11. A method of forming a photoresist pattern for use in a manufacture of a semiconductor device comprising the steps of:
 coating the composition for forming anti-reflective coating according to  claim 1 , on a semiconductor substrate and baking it to form an anti-reflective coating; 
 forming a photoresist layer on the anti-reflective coating; 
 exposing the semiconductor substrate covered with the anti-reflective coating and the photoresist layer with F2 excimer laser (wavelength 157 nm); and 
 developing the exposed photoresist layer.