Polymer device with a nanocomposite barrier layer

Abstract

According to one aspect of the invention, a polymer device and a method of constructing a polymer device are provided. The polymer device includes a first conductor, a second conductor, and a polymeric body between the first and second conductors. The polymeric body includes a polymer material and a phyllosilicate material.

1. A polymer device comprising:
 a first electrode; 
 a second electrode; and 
 a polymeric body between the first electrode and the second electrode, the polymeric body comprising a first layer of a polymer material having a first thickness only on top of a second layer of a phyllosilicate material having a second thickness, and a third layer of the phyllosilicate material having a third thickness covering the first layer of the polymer material, the polymeric body maintaining a charge after a voltage is applied across the electrodes, wherein the phyllosilicate material includes a cation, wherein the first electrode is deposited on the third layer of the phyllosilicate material. 
 
     
     
       2. The device of  claim 1 , wherein the phyllosilicate material is selected from the group consisting of natural phyllosilicates, synthetic phyllosilicates, and modified phyllosilicates. 
     
     
       3. The device of  claim 2 , wherein the phyllosilicate material is a natural phyllosilicate selected from the group consisting of montmorillonite, saponite, hectorite, mica, vermiculite, bentonite, nontronite, beidellite, volkonskoite, magadite, and kenyaite. 
     
     
       4. The device of  claim 2 , wherein the phyllosilicate material is a synthetic phyllosilicate selected from the group consisting of synthetic mica, synthetic saponite, and synthetic hectorite. 
     
     
       5. The device of  claim 2 , wherein the phyllosilicate material is a modified phyllosilicate selected from the group consisting of fluorinated montmorillonite, fluorinated mica, and fluorinated hectorite. 
     
     
       6. The device of  claim 3 , wherein the natural phyllosilicate is montmorillonite. 
     
     
       7. The device of  claim 1 , wherein the phyllosilicate material has a cation exchange capacity of from approximately 0.3 to approximately 3.0 meq/g. 
     
     
       8. The device of  claim 7 , wherein the phyllosilicate material has a cation exchange capacity of from approximately 0.9 to approximately 1.5 meq/g. 
     
     
       9. The device of  claim 1 , wherein the cation is selected from the group consisting of class IA elements, class IIA elements, and group IV elements. 
     
     
       10. The device of  claim 1 , wherein the polymer material comprises at least one of polyvinylidine fluoride, polyfluoroethylene, poly(2,3-difluoro-1,4-benzene), poly(2,3-difluoro-1,4-benzyl ether), poly(1,2-difluoroethyl). 
     
     
       11. An electronic assembly comprising:
 a substrate having an integrated circuit formed therein; 
 a plurality of first conductive lines formed over the substrate, being electrically connected to the integrated circuit, and extending in a first direction; 
 a polymeric layer formed over the plurality of first conductive lines, the polymeric layer having a plurality of polymeric sections, each polymeric section being over at least a portion of at least one of first conductive lines and comprising a first layer of a polymer material having a first thickness only on top of a second layer of a phyllosilicate material having a second thickness, and a third layer of the phyllosilicate material having a third thickness covering the first layer of the polymer material; and 
 a plurality of second conductive lines formed over the polymeric layer, being electrically connected to the integrated circuit, and extending in a second direction, each second conductive line extending over at least one of the first conductive lines and at least one of the polymeric sections to form a plurality of cells such that each polymeric section maintains a charge after a voltage is applied across the at least one first conductive line and the respective second conductive line, wherein at least the portion of at least one of the second conductive lines is deposited on the third layer of the phyllosilicate material. 
 
     
     
       12. The electronic assembly of  claim 11 , wherein the phyllosilicate material is selected from the group consisting of natural phyllosilicates, synthetic phyllosilicates, and modified phyllosilicates. 
     
     
       13. The electronic assembly of  claim 12 , wherein the phyllosilicate material is a natural phyllosilicate selected from the group consisting of montmorillonite, saponite, hectorite, mica, vermiculite, bentonite, nontronite, beidellite, volkonskoite, magadite, and kenyaite. 
     
     
       14. The electronic assembly of  claim 12 , wherein the phyllosilicate material is a synthetic phyllosilicate selected from the group consisting of synthetic mica, synthetic saponite, and synthetic hectorite. 
     
     
       15. The electronic assembly of  claim 12 , wherein the phyllosilicate material is a modified phyllosilicate selected from the group consisting of fluorinated montmorillonite, fluorinated mica, and fluorinated hectorite. 
     
     
       16. The electronic assembly of  claim 13 , wherein the natural phyllosilicate is montmorillonite. 
     
     
       17. The electronic assembly of  claim 12 , wherein the phyllosilicate material includes a cation. 
     
     
       18. The electronic assembly of  claim 17 , wherein the phyllosilicate material has a cation exchange capacity of from approximately 0.3 to approximately 3.0 meq/g. 
     
     
       19. The electronic assembly of  claim 18 , wherein the phyllosilicate material has a cation exchange capacity of from approximately 0.9 to approximately 1.5 meq/g. 
     
     
       20. The electronic assembly of  claim 17 , wherein the cation is selected from the group consisting of class IA elements, class IIA elements, and group IV elements. 
     
     
       21. The electronic assembly of  claim 11 , wherein the polymer material comprises at least one of polyvinylidine fluoride, polyfluoroethylene, poly(2,3-difluoro-1,4-benzene), poly(2,3-difluoro-1,4-benzyl ether), poly(1,2-difluoroethyl). 
     
     
       22. The electronic assembly of  claim 11 , wherein the substrate is a microelectronic die, and further comprising a printed circuit board, the microelectronic die being attached to the circuit board, and the printed circuit board being electrically connected to a computing system. 
     
     
       23. A polymer device comprising:
 a first electrode; 
 a second electrode; and 
 a polymeric body between the first electrode and the second electrode, the polymeric body comprising a first layer of a polymer material having a first thickness only on top of a second layer of a phyllosilicate material having a second thickness, and a third layer of the phyllosilicate material having a third thickness covering the first layer of the polymer material, the polymeric body maintaining a charge after a voltage is applied across the electrodes, wherein the first electrode is deposited on the third layer of the phyllosilicate material, wherein the polymer material comprises at least one of polyvinylidine fluoride, polyfluoroethylene, poly(2,3-difluoro-1,4-benzene), poly(2,3-difluoro-1,4-benzyl ether), poly(1,2-difluoroethyl).